Effect of direct current electric field （DCEF） on corrosion behaviour of copper printed circuit board （PCB-Cu）, Cl-ion migration behaviour, dendrites growth under thin electrolyte layer was investigated using pote...Effect of direct current electric field （DCEF） on corrosion behaviour of copper printed circuit board （PCB-Cu）, Cl-ion migration behaviour, dendrites growth under thin electrolyte layer was investigated using potentiodynamic polarization and scanning electron microscopy （SEM） with energy dispersive spectrometer （EDS）. Results indicate that DCEF decreases the corrosion of PCB-Cu;Cl-ions directionally migrate from the negative pole to the positive pole, and enrich on the surface of the positive pole, which causes serious localized corrosion; dendrites grow on the surface of the negative pole, and the rate and scale of dendrite growth become faster and greater with the increase of external voltage and exposure time, respectively.展开更多
Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 ...Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.展开更多
AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035...AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×10 13cm -2at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The f t,unit-current-gain frequency of the devices,is about 18.8GHz.展开更多
Z-scheme photocatalytic system has been regarded as a popular field of research in photoelectrochemical(PEC)water splitting.Among the many obstacles facing a Z-scheme photocatalytic system,the analysis methods of inte...Z-scheme photocatalytic system has been regarded as a popular field of research in photoelectrochemical(PEC)water splitting.Among the many obstacles facing a Z-scheme photocatalytic system,the analysis methods of interfacial Z-scheme charge transfer still remain a significant challenge.Hence,in this study,CdS/Ti-Fe_(2)O_(3)heterojunction photoanodes are elaborately designed to explore the charge-transfer behavior in PEC water splitting.In this study,photophysical measurements,including the Kelvin probe measurement,surface photovoltage spectroscopy(SPV),and transient photovoltage spectroscopy(TPV),are used to monitor the migration behavior of photogenerated charges at the interface electric field of CdS/Ti-Fe_(2)O_(3)Z-scheme heterojunction photoanodes.The Kelvin probe and SPV measurements demonstrate that CdS/Ti-Fe_(2)O_(3)interfacial driving force favors the rapid transfer of photoexcited electrons to CdS.The double-beam strategy based on TPV indicates that more electrons of Ti-Fe_(2)O_(3)are combined with the holes of CdS owing to the intensive interface electric field.The results of these measurements successfully prove the Z-scheme migration mechanism of CdS/Ti-Fe_(2)O_(3)photoanodes.Benefiting from the desirable charge transfer at the interface electric field,CdS/Ti-Fe_(2)O_(3)photoanodes exhibit superior photocatalytic oxygen evolution reaction performance compared with that of pure Ti-Fe_(2)O_(3).The photocurrent density of the 25CdS/Ti-Fe_(2)O_(3)photoanode reaches 1.94 mA/cm^(2) at 1.23 V versus reversible hydrogen electrode without excess cocatalyst,and it is two times higher than that of pure Ti-Fe_(2)O_(3)photoanode.Therefore,an outstanding strategy is provided in this study to prove the Z-scheme charge-transfer mechanism of photocatalytic systems in PEC water splitting.展开更多
An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is sui...An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is suitable for （100〉/ 〈110） channel nMOSFETs under biaxial or （100〉/〈 110 ） uniaxial stress and can be implemented in conventional device simulation tools .展开更多
We find quantum mechanical Fourier-Hankel representation transform for an electron moving in a uniform magnetic field. The physical meaning of Fourier decomposition states of electron's coordinate eigenstate and t...We find quantum mechanical Fourier-Hankel representation transform for an electron moving in a uniform magnetic field. The physical meaning of Fourier decomposition states of electron's coordinate eigenstate and the momentum eigenstate are revealed.展开更多
Electromigration in porous media is enhanced by a new type of electrokinetic processing. Compared with a single -oriented electric field, a continuously reoriented electric field was proven to sharply enhance mass tra...Electromigration in porous media is enhanced by a new type of electrokinetic processing. Compared with a single -oriented electric field, a continuously reoriented electric field was proven to sharply enhance mass transport of several heavy metals in kaolin. The initial concentration of the metals was: Cd: 250 mg/kg; Cu: 250 mg/kg; Ni: 250 mg/kg; Zn: 900 mg/kg. Electric field reorientation was obtained by the use of a fixed anode and a cathode that rotated at different frequencies (0, 0.25, 1.00, 1.25, 2.00, 5.00 and 10.00 r/m). Mass transport evidently increased from 0 r/m to 1.25 r/m, and then decreased as the rotation speed reached 10 r/m. From 0 r/m to 1.25 r/m, mass transport increased 2.87 times for Cd, 3.17 times for Cu, 2.11 times for Ni, and 4.13 times for Zn. We suggest that continuous reorientation of the electric field facilitates the advance of ions through kaolin pores, minimizing the retardation effect caused by media tortuosity.展开更多
基金Project(50871044)supported by the National Natural Science Foundation of ChinaProject(2012M511207)supported by the Postdoctoral Science Foundation of ChinaProject(10122011)supported by the Science Research Foundation of Wuhan Institute Technology,China
文摘Effect of direct current electric field （DCEF） on corrosion behaviour of copper printed circuit board （PCB-Cu）, Cl-ion migration behaviour, dendrites growth under thin electrolyte layer was investigated using potentiodynamic polarization and scanning electron microscopy （SEM） with energy dispersive spectrometer （EDS）. Results indicate that DCEF decreases the corrosion of PCB-Cu;Cl-ions directionally migrate from the negative pole to the positive pole, and enrich on the surface of the positive pole, which causes serious localized corrosion; dendrites grow on the surface of the negative pole, and the rate and scale of dendrite growth become faster and greater with the increase of external voltage and exposure time, respectively.
文摘Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm.
文摘AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×10 13cm -2at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The f t,unit-current-gain frequency of the devices,is about 18.8GHz.
文摘Z-scheme photocatalytic system has been regarded as a popular field of research in photoelectrochemical(PEC)water splitting.Among the many obstacles facing a Z-scheme photocatalytic system,the analysis methods of interfacial Z-scheme charge transfer still remain a significant challenge.Hence,in this study,CdS/Ti-Fe_(2)O_(3)heterojunction photoanodes are elaborately designed to explore the charge-transfer behavior in PEC water splitting.In this study,photophysical measurements,including the Kelvin probe measurement,surface photovoltage spectroscopy(SPV),and transient photovoltage spectroscopy(TPV),are used to monitor the migration behavior of photogenerated charges at the interface electric field of CdS/Ti-Fe_(2)O_(3)Z-scheme heterojunction photoanodes.The Kelvin probe and SPV measurements demonstrate that CdS/Ti-Fe_(2)O_(3)interfacial driving force favors the rapid transfer of photoexcited electrons to CdS.The double-beam strategy based on TPV indicates that more electrons of Ti-Fe_(2)O_(3)are combined with the holes of CdS owing to the intensive interface electric field.The results of these measurements successfully prove the Z-scheme migration mechanism of CdS/Ti-Fe_(2)O_(3)photoanodes.Benefiting from the desirable charge transfer at the interface electric field,CdS/Ti-Fe_(2)O_(3)photoanodes exhibit superior photocatalytic oxygen evolution reaction performance compared with that of pure Ti-Fe_(2)O_(3).The photocurrent density of the 25CdS/Ti-Fe_(2)O_(3)photoanode reaches 1.94 mA/cm^(2) at 1.23 V versus reversible hydrogen electrode without excess cocatalyst,and it is two times higher than that of pure Ti-Fe_(2)O_(3)photoanode.Therefore,an outstanding strategy is provided in this study to prove the Z-scheme charge-transfer mechanism of photocatalytic systems in PEC water splitting.
文摘An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is suitable for （100〉/ 〈110） channel nMOSFETs under biaxial or （100〉/〈 110 ） uniaxial stress and can be implemented in conventional device simulation tools .
基金The project supported by National Natural Science Foundation of China under Grant No.10175057the President Foundation of the Chinese Academy of Sciences
文摘We find quantum mechanical Fourier-Hankel representation transform for an electron moving in a uniform magnetic field. The physical meaning of Fourier decomposition states of electron's coordinate eigenstate and the momentum eigenstate are revealed.
基金Project supported by the Ministry of Education of China(No. 708060)the Cultivation Fund of the Key Scientific and Technical Innovation Projectthe Program for New Century Excellent Talents in University, Ministry of Education (No. NCET-08-0508),China
文摘Electromigration in porous media is enhanced by a new type of electrokinetic processing. Compared with a single -oriented electric field, a continuously reoriented electric field was proven to sharply enhance mass transport of several heavy metals in kaolin. The initial concentration of the metals was: Cd: 250 mg/kg; Cu: 250 mg/kg; Ni: 250 mg/kg; Zn: 900 mg/kg. Electric field reorientation was obtained by the use of a fixed anode and a cathode that rotated at different frequencies (0, 0.25, 1.00, 1.25, 2.00, 5.00 and 10.00 r/m). Mass transport evidently increased from 0 r/m to 1.25 r/m, and then decreased as the rotation speed reached 10 r/m. From 0 r/m to 1.25 r/m, mass transport increased 2.87 times for Cd, 3.17 times for Cu, 2.11 times for Ni, and 4.13 times for Zn. We suggest that continuous reorientation of the electric field facilitates the advance of ions through kaolin pores, minimizing the retardation effect caused by media tortuosity.
