When a surface acoustic wave （SAW） propagates on the surface of a GaAs semiconductor, coupling between electrons in the two-dimensional electron gas beneath the interface and the elastic host crystal through piezoel...When a surface acoustic wave （SAW） propagates on the surface of a GaAs semiconductor, coupling between electrons in the two-dimensional electron gas beneath the interface and the elastic host crystal through piezoelectric interaction will attenuate the SAW. The coupling coemcient is ~alculated for the SAW propagating along an arbitrary direction. It is found that the coupling strength is strongly dependent on the propagating direction. When the SAW propagates along the [011] direction, the coupling becomes quite weak.展开更多
A rigorous analysis of surface acoustic wave (SAW) reflection and scattering by electrodes is of paramount impor- tance in the design of SAW identification tags and sensors. In this paper, a new method based on Green...A rigorous analysis of surface acoustic wave (SAW) reflection and scattering by electrodes is of paramount impor- tance in the design of SAW identification tags and sensors. In this paper, a new method based on Green’s function concept is used to study reflection and scattering coefficients. By this method the reflection coefficient with its phase angle, transmission coeffi- cient, and bulk wave scattering coefficient, can be obtained rapidly and accurately. To get precise result, the influence of static charge must be taken into account. In the work, we successfully cancelled out the effect of static charge and the validity of the results was checked. As an example, the reflection, transmission and scattering coefficients of a single grounded electrode on 128° YX LiNbO3 is shown.展开更多
The preparation of aluminum nitrogen(AlN) film without Al texture is of great significance for the manufacture of highperformance surface acoustic wave(SAW) device.We research the process factors which bring Al into A...The preparation of aluminum nitrogen(AlN) film without Al texture is of great significance for the manufacture of highperformance surface acoustic wave(SAW) device.We research the process factors which bring Al into AlN film due to radio frequency(RF) magnetron sputtering system,and discuss how the process parameters influence the AlN thin film containing Al.In the research,it is found that the high sputtering power,the low deposition pressures and low partial pressure of Ar can lead to growing Al-texture during AlN thin film preparation,and the experiment also shows that filling the chamber with nitrogen gas can recrystallize a small amount of Al composition into AlN film during the annealing process in the high temperature environment.展开更多
基金the National Natural Science Foundation of China under
文摘When a surface acoustic wave （SAW） propagates on the surface of a GaAs semiconductor, coupling between electrons in the two-dimensional electron gas beneath the interface and the elastic host crystal through piezoelectric interaction will attenuate the SAW. The coupling coemcient is ~alculated for the SAW propagating along an arbitrary direction. It is found that the coupling strength is strongly dependent on the propagating direction. When the SAW propagates along the [011] direction, the coupling becomes quite weak.
基金Project (Nos. 10074034 and 10304012) supported by the NationalNatural Science Foundation of China
文摘A rigorous analysis of surface acoustic wave (SAW) reflection and scattering by electrodes is of paramount impor- tance in the design of SAW identification tags and sensors. In this paper, a new method based on Green’s function concept is used to study reflection and scattering coefficients. By this method the reflection coefficient with its phase angle, transmission coeffi- cient, and bulk wave scattering coefficient, can be obtained rapidly and accurately. To get precise result, the influence of static charge must be taken into account. In the work, we successfully cancelled out the effect of static charge and the validity of the results was checked. As an example, the reflection, transmission and scattering coefficients of a single grounded electrode on 128° YX LiNbO3 is shown.
基金supported by the National Natural Science Foundation of China (Nos.50972105 and 60806030)the Tianjin Natural Science Foundation (Nos.09JCZDJC16500 and 08JCYBJC14600)
文摘The preparation of aluminum nitrogen(AlN) film without Al texture is of great significance for the manufacture of highperformance surface acoustic wave(SAW) device.We research the process factors which bring Al into AlN film due to radio frequency(RF) magnetron sputtering system,and discuss how the process parameters influence the AlN thin film containing Al.In the research,it is found that the high sputtering power,the low deposition pressures and low partial pressure of Ar can lead to growing Al-texture during AlN thin film preparation,and the experiment also shows that filling the chamber with nitrogen gas can recrystallize a small amount of Al composition into AlN film during the annealing process in the high temperature environment.
