Transition-metal oxides have attracted much attention due to its abundant crystalline phases and intriguing physical properties. However, some of these compounds are difficult to be fabricated directly in film form du...Transition-metal oxides have attracted much attention due to its abundant crystalline phases and intriguing physical properties. However, some of these compounds are difficult to be fabricated directly in film form due to the ease of valence variation of transition-metal elements.In this work, we reveal the reversible structural transition between SrVO3 and Sr2V2O7 films via thermal treatment in oxygen atmosphere or in vacuum. Based on this, Sr2V2O7 epitaxial films are successfully synthesized and studied. Property characterizations show that the semitransparent and metallic SrVO3 could reversibly switch into transparent and insulating Sr2V2O7, implying potential applications in controllable electronic and optical devices.展开更多
Novel transfer functions are presented for a polymer electro-optic mieroring resonator switches. The resonating process ot the light in the microring is simulated using the formulas. Then the optimization of the struc...Novel transfer functions are presented for a polymer electro-optic mieroring resonator switches. The resonating process ot the light in the microring is simulated using the formulas. Then the optimization of the structural parameters is performed, and the characteristics are analyzed, such as the resonance time, output spectrum, operation voltage, insertion loss and crosstalk were analyzed. The simulation results show that the designed device exhibits favorable switching functions.展开更多
A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared ab...A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared absorption spectrum show that the materials have high thermal stability and high optical transparency in the infrared communication region. The refractive index of FPEEK can be controlled easily by changing the fluorine content of the materials. The 32-channel AWG multiplexer is fabricated using the FPEEK and oxygen reactive ion etching technology. The AWG multiplexer exhibits that the insertion loss is from 12.8 to 17.8 dB and the channel crosstalk is less than-20 dB. The wavelength channel spacing and the center wavelength are 0.8nm and 1548nm, respectively.展开更多
In this work, we study the interlayer phonon vibration modes, the layer-number- dependent optical bandgap, and the anisotropic photoluminescence （PL） spectra of atomically thin rhenium diselenide （ReSe2） for the f...In this work, we study the interlayer phonon vibration modes, the layer-number- dependent optical bandgap, and the anisotropic photoluminescence （PL） spectra of atomically thin rhenium diselenide （ReSe2） for the first time. The ultralow frequency interlayer Raman spectra and the polarization-resolved high frequency Raman spectra in ReSe2 allow the identification of its layer number and crystal orientation. Furthermore, PL measurements show the anisotropic optical emission intensity of the material with its bandgap increasing from 1.26 eV in the bulk to 1.32 eV in the monolayer. The study of the layer-number dependence of the Raman modes and the PL spectra reveals relatively weak van der Waal＇s interaction and two-dimensional （2D） quantum confinement in the atomically thin ReSe2. The experimental observation of the intriguing anisotropic interlayer interaction and tunable optical transition in monolayer and multilayer ReSe2 establishes the foundation for further exploration of this material in the development of anisotropic optoelectronic devices functioning in the near-infrared spectrum, which is important for many applications in optical communication and infrared sensing,展开更多
Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS perform...Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.展开更多
基金supported by the National Key R&D Program of China(No.2016YFA0300102)the National Natural Science Foundation of China(No.11675179,No.11434009,and No.11374010)+2 种基金the Fundamental Research Funds for the Central Universities(No.WK2340000065)partially carried out at the University of Science and Technology of China(USTC)center for Micro and Nanoscale Research and Fabricationthe support from the magnetic circular dichroism endstation at Hefei Light Source
文摘Transition-metal oxides have attracted much attention due to its abundant crystalline phases and intriguing physical properties. However, some of these compounds are difficult to be fabricated directly in film form due to the ease of valence variation of transition-metal elements.In this work, we reveal the reversible structural transition between SrVO3 and Sr2V2O7 films via thermal treatment in oxygen atmosphere or in vacuum. Based on this, Sr2V2O7 epitaxial films are successfully synthesized and studied. Property characterizations show that the semitransparent and metallic SrVO3 could reversibly switch into transparent and insulating Sr2V2O7, implying potential applications in controllable electronic and optical devices.
基金supported by National Science Foundation of China(60576045)the National "973" Project (2006CB 302803)
文摘Novel transfer functions are presented for a polymer electro-optic mieroring resonator switches. The resonating process ot the light in the microring is simulated using the formulas. Then the optimization of the structural parameters is performed, and the characteristics are analyzed, such as the resonance time, output spectrum, operation voltage, insertion loss and crosstalk were analyzed. The simulation results show that the designed device exhibits favorable switching functions.
文摘A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared absorption spectrum show that the materials have high thermal stability and high optical transparency in the infrared communication region. The refractive index of FPEEK can be controlled easily by changing the fluorine content of the materials. The 32-channel AWG multiplexer is fabricated using the FPEEK and oxygen reactive ion etching technology. The AWG multiplexer exhibits that the insertion loss is from 12.8 to 17.8 dB and the channel crosstalk is less than-20 dB. The wavelength channel spacing and the center wavelength are 0.8nm and 1548nm, respectively.
基金Acknowledgements This work is partially supported by National Science Foundation EFRI 2-DARE program （No. 1542815） and Zumberge Research and Innovation Fund Award. P.-H. Tan acknowledges support from the National Natural Science Foundation of China （Nos. 11225421, 11474277, and 11434010）.
文摘In this work, we study the interlayer phonon vibration modes, the layer-number- dependent optical bandgap, and the anisotropic photoluminescence （PL） spectra of atomically thin rhenium diselenide （ReSe2） for the first time. The ultralow frequency interlayer Raman spectra and the polarization-resolved high frequency Raman spectra in ReSe2 allow the identification of its layer number and crystal orientation. Furthermore, PL measurements show the anisotropic optical emission intensity of the material with its bandgap increasing from 1.26 eV in the bulk to 1.32 eV in the monolayer. The study of the layer-number dependence of the Raman modes and the PL spectra reveals relatively weak van der Waal＇s interaction and two-dimensional （2D） quantum confinement in the atomically thin ReSe2. The experimental observation of the intriguing anisotropic interlayer interaction and tunable optical transition in monolayer and multilayer ReSe2 establishes the foundation for further exploration of this material in the development of anisotropic optoelectronic devices functioning in the near-infrared spectrum, which is important for many applications in optical communication and infrared sensing,
文摘Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.
