自由电子激光光束线反射镜无应力夹持设计与分析

反射镜是自由电子激光光束线中的重要光学元件,反射镜自重引起的面形误差会严重影响光束线的成像质量。为减小自重引起的面形误差,基于Bessel点理论提出了重力补偿方案,并设计了无应力夹持装置,利用有限元软件对该装置进行仿真分析。以尺寸为440 mm×50 mm×50 mm的反射镜为例进行分析,传统支撑方式下反射镜下表面面形误差为1.647μrad,采用本文提出的夹持方案后面形误差降至0.0857μrad,优于工程指标0.1μrad。为防止反射镜在工作模式切换时发生窜动,可对反射镜添加不超过2 N的微小夹持力,此时反射镜的面形误差为0.0939μrad。此外,还对装置进行了动力学分析,结果显示:该设计方案可有效防止装置存在较低的固有频率,在使用过程中不会产生共振现象,满足光束线的使用需求。

A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography

A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.

Fabrication and Characteristics of a Si-Based Single Electron Transistor

Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.

200nm Gate Length Metamorphic In_(0.52)Al_(0.48)As/In_(0.6)Ga_(0.4) As HEMTs on GaAs Substrates with 110GHz f_T

200nm gate-length GaAs-based InAlAs/InGaAs MHEMTs are fabricated by MBE epitaxial material and EBL （electron beam lithography） technology. Ti/Pt/Au is evaporated to form gate metals. A T-shaped gate is produced using a novel PMMA/PMGI/PMMA trilayer resist structure to decrease parasitic capacitance and parasitic resistance of the gate. Excellent DC and RF performances are obtained and the transconductance （gm） ,maximum saturation drain current density （Joss）, threshold voltage （ VT）, current cut-off frequency （fT） , and maximum oscillation frequency （fmax） of InAlAs/ InGaAs MHEMTs are 510mS/mm,605mA/mm, -1.8V, 110GHz, and 72GHz, respectively.

Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.

Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect

We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography （EBL）. The proximity effect is extended to develop a flexible and practical method for preparing metal （e. g. Au or Ag） nanogaps and arrays in combination with a transfer process （e. g., deposition/lift-off）. Different from the direct gap-writing process,the nanogap precursor structures （nanoconnections） were designed by GDSII software and then written by electron beam. Following a deposition and lift-off process, the metal nanogaps were obtained and the nanogap size can be lowered to -10nm by controlling the exposure dose in EBL.

Nano-Level Electron Beam Lithography

The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.

γ-MnO_2结构模型现状与EMD的性能

介绍了γ-MnO2的结构模型的新近进展以及研究γ-MnO2结构的方法一阶跃电位电化学谱、汇聚光束电子衍射法和TEM法。指出EMD在碱性电液中比CMD有优越的性能。尽管同属γ-型,即使同为EMD,由于结构特性的不同,放电性能也不尽相同。讨论了在不同放电电压下相应的反应过程。

High-Responsivity ZnS Schottky Barrier Photodiode Array for Ultraviolet Imaging

A different approach,using the molecular beam epitaxy (MBE)-grown ZnS-based Schottky photodiode technology,is applied to fabricate an 8×8 photodiode array.The micro-processing procedures of this photodiode array including standard photolithography,a number of metallisation,wet-chemical etching and SiO_2 deposition for insulation are developed.The detector is characterized to have a cutoff wavelength at 340 nm and the photo-responsivity measurements on the pixels result an ultraviolet (UV) response as high as 0.15 A/W,corresponding to an external quantum efficiency of 55% in the visible-blind spectral ranging from 400 down to 250nm.Imaging tests indicate that this array is able to capture the intensity profile of a given UV light source with reasonably good capability.

An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices

We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size （less than 10nm）. With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled. The second step is the exposure of the access waveguides at a larger step size （about 30nm） to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.

Ferromagnetic Resonance Study on the Permalloy Submicron Rectangular Arrays Prepared by Electron Beam Lithography

In this paper, we report a ferromagnetic resonance study on the permalloy film of submicron sized rectangular arrays prepared by electron beam lithography and the theoretical simulation to the non uniform demagnetizing effect and ferromagnetic resonance data. By theoretical simulation, the magnetization, gyromagnetic ratio and g value of the sample are determined. The theoretical curves of the dependence of the resonance field on the field orientation φ H fit well with the experimental data. When the steady magnetic field is applied near the film normal, a series of additional regular peaks (up to eight ) appeared in the FMR spectrum on the low field side of the main FMR peak. The resonance field of these side peaks decreases linearly with the peak number. The possible physical mechanism of these multiple peaks was discussed.

Influence of welding processes on microstructure, tensile and impact properties of Ti-6Al-4V alloy joints

Titanium alloys have been successfully applied for aerospace, ship and chemical industries because they possess many good characteristics such as high specific strength, superior corrosion resistance and excellent high temperature resistance. Though these alloys show reasonable weldability characteristics, the joint properties are greatly influenced by the welding processes. Weld thermal cycle of the processes will control the weld metal solidification and subsequent phase transformation and resultant microstructure. The welded joints of Ti-6Al-4V alloy were fabricated by gas tungsten arc welding （GTAW）, laser beam welding （LBW） and electron beam welding （EBW） processes. The joints fabricated by EBW process exhibit higher strength compared with the GTAW and LBW joints; but the joints by GTAW process exhibit higher impact toughness compared with the LBW and EBW joints. The resultant tensile and impact properties of the welded joints were correlated with the weld metal microstructures.

Free electron laser based on the Smith-Purcell radiation

A Smith-Purcell （SP） free electron laser （FEL） ,composed of a metallic diffraction flat grating,an open cylindrical mirror cavity and a relativistic sheet electron beam with moderate energy, is presented. The characteristics of this device are studied by theoretical analysis,experimental measurements and particle-in-cell （PIO） simulation method. Results indicate that the coherent radiation with an output peak power up to 50 MW at millimeter wavelengths can be generated by using relativistic electron beam of moderate energy.

Identification of Intermediates in Pyridine Pyrolysis with Molecular-beam Mass Spectrometry and Tunable Synchrotron VUV Photoionization

The pyrolysis of pyridine （5.26% pyridine in argon） was performed with tunable synchrotron vacuum ultraviolet photoionization and molecular-beam mass spectrometry technique at the temperature range of 1255-1765 K at 267 Pa. About 20 products and intermediates, containing major species H2, HCN, C2H2, C5H3N, C4H2, and C3H3N, were identified by near-threshold measurements of photoionization mass spectra and their mole fractions vs. temperatures were estimated. The major reaction pathways are analyzed based on the experimental observations.

Effects of electron beam lithography process parameters on structure of silicon optical waveguide based on SOI

Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material.

Cold Light Mirror Fabricated by Electr on Beam Evaporation of TiO_2 and SiO_2

A process suitable for production on a large scale of cold light mirror for film projector is introduced. Deposition parameters required for producing TiO 2/SiO 2 optical multilayer systems by electron beam evaporation of TiO 2 and SiO 2 starting materials are investigated. Manufacture and techniques of cold mirror and the adhesion,stability, wear and corrosion resistance of cold mirror by this process are discussed. The result shows that cold mirror produced has good optical properties and better adhesion.

Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films

In this paper,the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated.It was found that the bombardment increases the light absorption by two to eleven times and increases the conductance of the film by 3 000 times.This has never been reported before of amorphous Si with electron beam evaporation deposition.

Control Schemes for Driving Electro-optic Array Beam Deflectors

The beam deflectors based on electro-optic phased array（EOPA） is mainly described, and then an analysis on existing control schemes for driving the EOPA beam deflectors, based on custom hard-wired electronics or based on software in a microcontroUer, is made. Compared with these, a driving and control system for a multi-channel EOPA beam deflector is presented, in which the control assignment is implemented with a field programmable gate array（FPGA） chip. For different performance requirements, two control schemes, one with the serial scheme and another with the parallel scheme, have been explored and rapidly prototyped in Xilinx FPGA chips. With the control structures for the EOPA beam deflector, scanning rates of 588 kHz and 5 MHz can be respectivelv reached.