为解决丢失枪、弹后给社会带来的危害及加强警方对枪、弹的管控等问题,基于MSP430单片机与无线射频技术(radio frequency identification,RFID)设计一套智能枪-弹识别系统。该系统包括接触式电子击发手枪弹、枪内处理单元2部分,可以实现...为解决丢失枪、弹后给社会带来的危害及加强警方对枪、弹的管控等问题,基于MSP430单片机与无线射频技术(radio frequency identification,RFID)设计一套智能枪-弹识别系统。该系统包括接触式电子击发手枪弹、枪内处理单元2部分,可以实现枪-弹识别:正常击发编写过特殊识别码的子弹,对码失败或没有编写识别码的普通子弹无法完成击发,并在击发失败后触发失败提醒。结果表明:该系统可以有效减少因枪支违法外流带来的生命财产损失,加强枪、弹管控。展开更多
In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam...In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam from a field emitter. According to the current distribution and the trajectories of the primary electron beam, it is shown that the residual gas is ionized and the ion pairs are generated. The trajectories of the positive ions are simulated. With the different locations and kinetic energy of i...展开更多
By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with st...By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with stress time. Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of Qbd （charge to breakdown）,and it may also cause the degradation of off-state drain leakage current. Stress-induced gate oxide damage is located not only in the drain side but also in the source side. The tertiary electrons generated by hot holes move toward Si-SiO2 interface under the electrical field toward the substrate,which explains the source side gate oxide damage.展开更多
Breakdown formation in the explosive-emission sources is related to the interelectrode gap filling with the cathode and anode plasma generated at the anode and in the gap under the beam influence. Under conditions of ...Breakdown formation in the explosive-emission sources is related to the interelectrode gap filling with the cathode and anode plasma generated at the anode and in the gap under the beam influence. Under conditions of saturation of the cathode plasma emissive ability as well as when the measures on the emission boundary stabilization are taken, the anode plasma has the deciding part in the formation of the electron source breakdown. The paper presents the results of the anode plasma investigations obtained to solve the problem of the electron beam length increase in the explosive-emission sources. The data concerning the gas release from the anode, the mechanism of the anode plasma formation and the anode plasma influence on the parameters of the generated electron beam are presented as well.展开更多
文摘为解决丢失枪、弹后给社会带来的危害及加强警方对枪、弹的管控等问题,基于MSP430单片机与无线射频技术(radio frequency identification,RFID)设计一套智能枪-弹识别系统。该系统包括接触式电子击发手枪弹、枪内处理单元2部分,可以实现枪-弹识别:正常击发编写过特殊识别码的子弹,对码失败或没有编写识别码的普通子弹无法完成击发,并在击发失败后触发失败提醒。结果表明:该系统可以有效减少因枪支违法外流带来的生命财产损失,加强枪、弹管控。
文摘In field emission devices, the emission current sometimes degrades with the time. The mechanism of the current degradation is complicated. In this paper, a program is used to simulate the movement of the electron beam from a field emitter. According to the current distribution and the trajectories of the primary electron beam, it is shown that the residual gas is ionized and the ion pairs are generated. The trajectories of the positive ions are simulated. With the different locations and kinetic energy of i...
文摘By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with stress time. Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of Qbd （charge to breakdown）,and it may also cause the degradation of off-state drain leakage current. Stress-induced gate oxide damage is located not only in the drain side but also in the source side. The tertiary electrons generated by hot holes move toward Si-SiO2 interface under the electrical field toward the substrate,which explains the source side gate oxide damage.
文摘Breakdown formation in the explosive-emission sources is related to the interelectrode gap filling with the cathode and anode plasma generated at the anode and in the gap under the beam influence. Under conditions of saturation of the cathode plasma emissive ability as well as when the measures on the emission boundary stabilization are taken, the anode plasma has the deciding part in the formation of the electron source breakdown. The paper presents the results of the anode plasma investigations obtained to solve the problem of the electron beam length increase in the explosive-emission sources. The data concerning the gas release from the anode, the mechanism of the anode plasma formation and the anode plasma influence on the parameters of the generated electron beam are presented as well.
