As the necessary components for various modern electronic and optoelectronic devices, novel transparent electrodes(TEs) with the low cost, abundance features, and comparable performance of indium tin oxide(ITO) are in...As the necessary components for various modern electronic and optoelectronic devices, novel transparent electrodes(TEs) with the low cost, abundance features, and comparable performance of indium tin oxide(ITO) are inquired materials. Metal nanowires(NWs) with the excellent photoelectric properties as next-generation TE candidates have widely applications in smart optoelectronic devices such as electronic skins, wearable electronics, robotic skins, flexible and stretchable displays. This review describes the synthetic strategies for the preparation of metal NWs, the assemble process for metal NW films,and the practical aspects of metal NW films with the desired properties in various low-cost, flexible,and solution-based photoelectric devices.展开更多
By applying non-equilibrium Green's functions (NEGF) in combination with the density functional theory (DFT), we investigate the electronic transport properties of molecular junctions constructed by OPE derivative...By applying non-equilibrium Green's functions (NEGF) in combination with the density functional theory (DFT), we investigate the electronic transport properties of molecular junctions constructed by OPE derivatives with different side groups combined C60 molecules. The results show that the side groups play an important role in the properties of electron transport. Negative differential resistance (NDR) is observed in such devices. Especially for the molecule with electron-donating group ( OCH3), two NDR appear at different bias voltage regions. And the mechanism is proposed for the NDR behavior, owing to the shift of the molecular orbitals caused by the change in molecule charge.展开更多
基金supported by the National Basic Research Program of China(2014CB931700)the Fundamental Research Funds for the Central Universities(30920130111017 and NE2012004)+1 种基金the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(IOSKL2012KF06)the Program for Eastern Scholar at Shanghai Institutions of Higher Learning(2012-53)
文摘As the necessary components for various modern electronic and optoelectronic devices, novel transparent electrodes(TEs) with the low cost, abundance features, and comparable performance of indium tin oxide(ITO) are inquired materials. Metal nanowires(NWs) with the excellent photoelectric properties as next-generation TE candidates have widely applications in smart optoelectronic devices such as electronic skins, wearable electronics, robotic skins, flexible and stretchable displays. This review describes the synthetic strategies for the preparation of metal NWs, the assemble process for metal NW films,and the practical aspects of metal NW films with the desired properties in various low-cost, flexible,and solution-based photoelectric devices.
基金supported by the Independent Innovative Natural Science Foundation of Shandong University (Grant No. 2009TS097)the Natural Science Foundation of Shandong Province of China (Grant Nos. ZR2009-AL004 and ZR2010AM037)
文摘By applying non-equilibrium Green's functions (NEGF) in combination with the density functional theory (DFT), we investigate the electronic transport properties of molecular junctions constructed by OPE derivatives with different side groups combined C60 molecules. The results show that the side groups play an important role in the properties of electron transport. Negative differential resistance (NDR) is observed in such devices. Especially for the molecule with electron-donating group ( OCH3), two NDR appear at different bias voltage regions. And the mechanism is proposed for the NDR behavior, owing to the shift of the molecular orbitals caused by the change in molecule charge.
