The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,st...The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.展开更多
Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl ...Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material.展开更多
The concept of an integrated "lab on a chip" has long been a goal for the micro-electro-mechanical-systems(MEMS) community.This would entail the integration of not only the sampling and analysis of various f...The concept of an integrated "lab on a chip" has long been a goal for the micro-electro-mechanical-systems(MEMS) community.This would entail the integration of not only the sampling and analysis of various functions,but also the ability to transmit this information off the chip to a central repository.This paper describes the initial steps in the fabrication of a "lab on a chip" which would continually analyze blood sampled via microneedles using techniques such as nano plasmonics,specifically,concentrations of glucose.The analysis could then be transmitted off the chip using digital signal processing.This paper describes the analysis and optimization of the microneedle shape and size and the fabrication of the resulting needles in silicon using deep reactive ion etching(DRIE).The paper also describes the opportunities for fabrication of such needles in alternative materials and describes the issues that still have to be overcome before such an integrated device is realized.展开更多
A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices is presented,which takes advantage of the lag effect in silicon DRIE(deep reactive ion etching).The wide trenches and the releasi...A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices is presented,which takes advantage of the lag effect in silicon DRIE(deep reactive ion etching).The wide trenches and the releasing holes are etched to the buried oxide in the first-step DRIE whereas the narrow trenches are still connected due to the lag effect.After the buried oxide is removed by wet etching through the opened releasing holes and wide trenches,the narrow trenches are etched through by the second-step DRIE.Not only can the sticking problems be avoided,but also the footing effect during the DRIE can be partially suppressed.The feasibility of the proposed technique was verified by implementing a capacitive accelerometer.The scale factor and the non-linearity of the fabricated accelerometer were measured to be 63.4 mV/g and 0.1% with the measurement range of ±1 g,respectively.展开更多
We investigate the nature of the dark matter by proposing a mechanism for the breaking of local rotational symmetry between ordinary third family leptons and proposed non-regular leptons at energy scales below 10 TeV....We investigate the nature of the dark matter by proposing a mechanism for the breaking of local rotational symmetry between ordinary third family leptons and proposed non-regular leptons at energy scales below 10 TeV. This symmetry breaking mechanism involves electric charge swap between ordinary families of leptons can and produces highly massive non-regular leptons of order 0 （1 TeV） mass unobservable at energy scales below 10 TeV （the scale of LEP Ⅰ, Ⅱ and neutrino oscillation experiments）. Electric charge swap between ordinary families of leptons produces heavy neutral non-regular leptons with order 0 （1 TeV） masses, which may form cold dark matter. The existence of these proposed leptons can be tested once the Large Hadron Collider （LHC） becomes operative at 10 TeV energy-scales. This proposition may have far reaching applications in astrophysics and cosmology.展开更多
文摘The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.
基金Project(52175445) supported by the National Natural Science Foundation of ChinaProject(ZZYJKT2020-09) supported by the State Key Laboratory of High Performance Complex Manufacturing (Central South University),China+1 种基金Projects(2020JJ4247, 2022JJ30743) supported by the Natural Foundation of Hunan Province,ChinaProject(1053320190337) supported by the Fundamental Research Funds for the Central University,China。
文摘Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material.
文摘The concept of an integrated "lab on a chip" has long been a goal for the micro-electro-mechanical-systems(MEMS) community.This would entail the integration of not only the sampling and analysis of various functions,but also the ability to transmit this information off the chip to a central repository.This paper describes the initial steps in the fabrication of a "lab on a chip" which would continually analyze blood sampled via microneedles using techniques such as nano plasmonics,specifically,concentrations of glucose.The analysis could then be transmitted off the chip using digital signal processing.This paper describes the analysis and optimization of the microneedle shape and size and the fabrication of the resulting needles in silicon using deep reactive ion etching(DRIE).The paper also describes the opportunities for fabrication of such needles in alternative materials and describes the issues that still have to be overcome before such an integrated device is realized.
基金supported by the National Natural Science Foundation of China (Grant No. 90923037)
文摘A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices is presented,which takes advantage of the lag effect in silicon DRIE(deep reactive ion etching).The wide trenches and the releasing holes are etched to the buried oxide in the first-step DRIE whereas the narrow trenches are still connected due to the lag effect.After the buried oxide is removed by wet etching through the opened releasing holes and wide trenches,the narrow trenches are etched through by the second-step DRIE.Not only can the sticking problems be avoided,but also the footing effect during the DRIE can be partially suppressed.The feasibility of the proposed technique was verified by implementing a capacitive accelerometer.The scale factor and the non-linearity of the fabricated accelerometer were measured to be 63.4 mV/g and 0.1% with the measurement range of ±1 g,respectively.
文摘We investigate the nature of the dark matter by proposing a mechanism for the breaking of local rotational symmetry between ordinary third family leptons and proposed non-regular leptons at energy scales below 10 TeV. This symmetry breaking mechanism involves electric charge swap between ordinary families of leptons can and produces highly massive non-regular leptons of order 0 （1 TeV） mass unobservable at energy scales below 10 TeV （the scale of LEP Ⅰ, Ⅱ and neutrino oscillation experiments）. Electric charge swap between ordinary families of leptons produces heavy neutral non-regular leptons with order 0 （1 TeV） masses, which may form cold dark matter. The existence of these proposed leptons can be tested once the Large Hadron Collider （LHC） becomes operative at 10 TeV energy-scales. This proposition may have far reaching applications in astrophysics and cosmology.
