A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared ab...A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared absorption spectrum show that the materials have high thermal stability and high optical transparency in the infrared communication region. The refractive index of FPEEK can be controlled easily by changing the fluorine content of the materials. The 32-channel AWG multiplexer is fabricated using the FPEEK and oxygen reactive ion etching technology. The AWG multiplexer exhibits that the insertion loss is from 12.8 to 17.8 dB and the channel crosstalk is less than-20 dB. The wavelength channel spacing and the center wavelength are 0.8nm and 1548nm, respectively.展开更多
Quaternary chalcogenide Cu2FeSnS4 （CFTS） nanoparticles, as a kind of potential absorber layer material in thin film solar cells （TFSCs）, were successfully synthesized by using a convenient solvothermal method. Alk...Quaternary chalcogenide Cu2FeSnS4 （CFTS） nanoparticles, as a kind of potential absorber layer material in thin film solar cells （TFSCs）, were successfully synthesized by using a convenient solvothermal method. Alkali element K is incorporated into CFTS thin films in order to fiLrther improve the surface morphology and the optical properties of related films. X-ray diffraction （XRD）, Raman spectroscopy and field emission scanning electron microscopy （FESEM） were used to characterize the phase purity, morphology and composition of CFTS particles and thin films. The results show that the particle elemental ratios of Cu/（Fe＋Sn） and Fe/Sn are 1.2 and 0.9, respectively, which are close to the characteristics of stoichiometric CFTS. The band gaps of CFTS films before and after doping K ions are estimated to be 1.44 eV and 1.4 eV with an error of ±0.02 eV.展开更多
Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating...Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating In(acac)3and Ga(acac)3isopropanol precursors followed by low-temperature thermal treatment was developed to fabricate In_(2)O_(3)and Ga2O3cathode buffer layers (CBLs).The introduction of In_(2)O_(3)or Ga2O3CBLs endows PM6:Y6-based OSCs with outstanding performance and high PCEs of 16.17%and 16.01%,respectively.Comparison studies present that the In_(2)O_(3)layer possesses a work function (WF) of 4.58 eV,which is more favorable for the formation of ohmic contact compared with the Ga2O3layer with a WF of 5.06 eV and leads to a higher open circuit voltage for the former devices.Electrochemical impedance spectroscopy was performed to reveal how In_(2)O_(3)and Ga2O3affect the internal charge transfer and the origin of their performance difference.Although In_(2)O_(3)possesses lower series resistance loss,Ga2O3has a higher recombination resistance,which enhances the device fill factor and compensates for its series resistance loss to some extent.Comparative analysis of the photo-physics of In_(2)O_(3)and Ga2O3suggests that both are excellent CBLs for highly efficient OSCs.展开更多
文摘A cross-linkable fluorinated poly (ether ether ketone) (FPEEK) was synthesized for the fabrication of arrayed waveguide grating (AWG) multiplexer. The results of thermal gravimetric analysis (TGA) and near-infrared absorption spectrum show that the materials have high thermal stability and high optical transparency in the infrared communication region. The refractive index of FPEEK can be controlled easily by changing the fluorine content of the materials. The 32-channel AWG multiplexer is fabricated using the FPEEK and oxygen reactive ion etching technology. The AWG multiplexer exhibits that the insertion loss is from 12.8 to 17.8 dB and the channel crosstalk is less than-20 dB. The wavelength channel spacing and the center wavelength are 0.8nm and 1548nm, respectively.
基金supported by National Natural Science Foundation of China(No.51674026)the Fundamental Research Funds for the Central Universities in 2015(No.FRF-BD-15-004A)
文摘Quaternary chalcogenide Cu2FeSnS4 （CFTS） nanoparticles, as a kind of potential absorber layer material in thin film solar cells （TFSCs）, were successfully synthesized by using a convenient solvothermal method. Alkali element K is incorporated into CFTS thin films in order to fiLrther improve the surface morphology and the optical properties of related films. X-ray diffraction （XRD）, Raman spectroscopy and field emission scanning electron microscopy （FESEM） were used to characterize the phase purity, morphology and composition of CFTS particles and thin films. The results show that the particle elemental ratios of Cu/（Fe＋Sn） and Fe/Sn are 1.2 and 0.9, respectively, which are close to the characteristics of stoichiometric CFTS. The band gaps of CFTS films before and after doping K ions are estimated to be 1.44 eV and 1.4 eV with an error of ±0.02 eV.
基金supported by the National Natural Science Foundation of China (51573042,61874148,51873007,5181101540 and 21835006)the Fundamental Research Funds for the Central Universities in China (2019MS025 and 2018MS032)the State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (LAPS20003)。
文摘Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating In(acac)3and Ga(acac)3isopropanol precursors followed by low-temperature thermal treatment was developed to fabricate In_(2)O_(3)and Ga2O3cathode buffer layers (CBLs).The introduction of In_(2)O_(3)or Ga2O3CBLs endows PM6:Y6-based OSCs with outstanding performance and high PCEs of 16.17%and 16.01%,respectively.Comparison studies present that the In_(2)O_(3)layer possesses a work function (WF) of 4.58 eV,which is more favorable for the formation of ohmic contact compared with the Ga2O3layer with a WF of 5.06 eV and leads to a higher open circuit voltage for the former devices.Electrochemical impedance spectroscopy was performed to reveal how In_(2)O_(3)and Ga2O3affect the internal charge transfer and the origin of their performance difference.Although In_(2)O_(3)possesses lower series resistance loss,Ga2O3has a higher recombination resistance,which enhances the device fill factor and compensates for its series resistance loss to some extent.Comparative analysis of the photo-physics of In_(2)O_(3)and Ga2O3suggests that both are excellent CBLs for highly efficient OSCs.
