Organic Light-Emitting Diodes by Doping Liq into an Electron Transport Layer

Organic light emitting diodes （OLEDs） incorporating an n-doping transport layer comprised of 8-hydroxy-quin- olinato lithium （Liq） doped into 4＇ 7- diphyenyl-1,10-phenanthroline （BPhen） as ETL and a p-doping transport layer that includes tetrafluro-tetracyano-quinodimethane （F4- TCNQ） doped into 4,4′, 4″-tris （3-methylphenylphenylamono） triphe- nylamine （m-MTDATA） are demonstrated. In order to examine the improvement in the conductivity of transport layers, hole-only and electron-only devices are fabricated. The current and power efficiency Of organic light-emitting diodes are improved significantly after introducing an n-doping （BPhen：33wt% Liq） layer as an electron transport layer （ETL） and a p-doping layer composed of m-MTDATA and F4- TCNQ as a hole transport layer （HTL）. Compared with the control device （without doping） , the current efficiency and power efficiency of the most efficient device （device C） are enhanced by approximately 51% and 89% ,respectively, while driving voltage is reduced by 29%. This improvement is attributed to the improved conductivity of the transport layers that leads to efficient charge balance in the emission zone.

Effect of chromium substitution on structural, electrical and magnetic properties of NiZn ferrites

Ni0.5Zn0.5Fe2-xCrxO4(0≤x≤0.5)ferrites were successfully prepared by conventional solid state reaction method to investigate the effect of chromium substitution on the structural,electrical and magnetic properties.X-ray powder diffraction results demonstrate that all the prepared samples are well crystallized single-phase spinel structures without secondary phase.As chromium concentration increases,the lattice parameter and crystallite size gradually decrease.The magnetic measurement indicates that saturation magnetization is substantially suppressed by Cr3+doping,changing from 73.5 A·m2/kg at x=0 to 46.3 A·m2/kg at x=0.5.While the room-temperature electrical resistivity is more than four orders of magnitude enhanced by Cr3+substitution,reaching up to 1.1×108Ω·cm at x=0.5.The dielectric constant monotonously decreases with rising frequency for these ferrites,showing a normal dielectric dispersion behavior.The compositional dependence of dielectric constant is inverse with that of electrical resistivity,which originates from the reduced Fe2+/Fe3+electric dipole number by doping,indicating inherent correlation between polarization and conduction mechanism in ferrite.

Device Characteristics Comparison Between GaAs Single and Double Delta-Doped Pseudomorphic High Electron Mobility Transistors

The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double delta doped design,the DH-PHEMT can enhance the carrier confinement,increase the electron gas density,and improve the electron gas distribution,which is beneficial to the device performance.A high device linearity,high transconductance over a large gate voltage swing,high current drivability are found in DH-PHEMT.These improvements suggest that DH-PHEMT is more suitable for high linearity applications in microwave power device.

The effect of transition metal ions (M^(2+)=Mn^(2+),Ni^(2+),Co^(2+),Cu^(2+)) on the chemical synthesis polyaniline as counter electrodes in dye-sensitized solar cells

The effect of transition metal ions(M^(2+)=Mn^(2+),Ni^(2+),Co^(2+),Cu^(2+)) on the chemical synthesis of polyaniline(PANI) used as a platinum-free counter electrode(CE) in dye-sensitized solar cells(DSSCs) was investigated.PANI was synthesized by co-polymerization of aniline in the presence of different transition metal ions by using potassium dichromate in acidic medium. It was found that the ion doping of PANI showed a certain catalytic activity for the regeneration of traditional iodide/triiodide(I^-/I_3^-) redox couples. The power conversion efficiency(η) of PANI CEs doped with Mn^(2+),Ni^(2+),Co^(2+) (4.41%, 2.36% and 2.10%, respectively) were higher than 1.94%, the value measured for PANI CE without doping. Doping with Cu^(2+)decreased the power conversion efficiency of PANI CE(PANI-Cu^(2+) η = 1.41%). The electrical properties of the PANI, PANI-Ni^(2+), PANI-Co^(2+),PANI-Mn^(2+) and PANI-Cu^(2+) were studied by cyclic voltammetry(CV), impedance(EIS), and Tafel polarization curve. The experimental results confirmed that PANI was affected by the doping of different transition metal ions(M^(2+)=Mn^(2+),Ni^(2+),Co^(2+),Cu^(2+)). These results indicate a potential application of ion doped PANI as counter electrode in cost-effective DSSCs.

Host Engineering for Red Electrophosphorescent Devices

In this paper, we demonstrate that controlled dopantoncentration is an essential issue for charge carriers transporting in red Phosphorescent Organic Light-Emitting Device （PHOLED）. Carriers transport via dopant molecules in the emitting layer with a single host, however, via both dopant and host molecules when their energy levels are well aligned. Conditions for reduced driving-voltage and enhanced efficiency of red PHOLED are obtained by employing a mixed host structure. A pure red PHOLED with color coordinates of （0.67, 0.33） has been realized by using only 4 wt% dopant, The device achieves 100 cd/cm2 at 2.9 V, with correspond- ing power efficiency of 9.3im/W and external quantum efficiency of 14.3%.

黑磷/介质多层结构包覆的可调谐波导

从理论上提出了一种由黑磷/介质多层结构包覆的等离子体波导。利用MATLAB数值求解该波导的色散方程,进而仿真出波导的有效折射率、传播长度、趋肤深度及品质因数等性能参数曲线。由仿真曲线可知,波导的性能与黑磷/介质多层结构中的电子掺杂率正相关,与单元层中介质层厚度负相关。与同类型金属/介质多层结构波导的性能比较后可知,黑磷/介质多层结构波导在中红外及远红外波段具更大的传播长度、更小的趋肤深度及更大的品质因数。该波导可调谐且性能优良。

Phosphorus-doped MoS_(2) with sulfur vacancy defects for enhanced electrochemical water splitting

MoS_(2)is a promising electrocatalyst because of its natural abundance and outstanding electrochemical stability.However,the poor conductivity and low activity limit its catalytic performance;furthermore,MoS_(2)is unable to satisfy the requirements of most industrial applications.In this study,to obtain a P-doped MoS_(2)catalyst with S vacancy defects,P is inserted into the MoS_(2)matrix via a solid phase ion exchange at room temperature.The optimal P-doping amount is 11.4 wt%,and the resultant catalyst delivers excellent electrocatalytic properties for the hydrogen evolution reaction(HER)and oxygen evolution reaction(OER)with the corresponding overpotentials of 93 and 316 mV at 10 mA cm^(-2) in an alkaline solution;these values surpass the overpotentials of most previously reported MoS_(2)-based materials.Theoretical calculations and results demonstrate that the synergistic effect of the doped P,which forms active centers in the basal plane of MoS_(2),and S vacancy defects caused by P doping intensifies the intrinsic electronic conductivity and electrocatalytic activity of the catalyst.Density functional theory calculations demonstrate that P optimizes the free energy of the MoS_(2)matrix for hydrogen adsorption,thereby considerably increasing the intrinsic activity of the doped catalyst for the HER compared with that observed from pristine MoS_(2).The enhanced catalytic activity of P-doped MoS_(2)for the OER is attributed to the ability of the doped P which facilitates the adsorption of hydroxyl and hydroperoxy intermediates and reduces the reaction energy barrier.This study provides a new environmentally friendly and convenient solid-phase ion exchange method to improve the electrocatalytic capability of two-dimensional transition-metal dichalcogenides in largescale applications.

Nickel-doped CoN nanowire bundles as efficient electrocatalysts for oxygen evolution reaction

Cost-efficient electrocatalysts composed of earth-abundant elements are highly desired for enhanced oxygen evolution reaction (OER).As a promising candidate,metallic Co4N already demonstrated electrocatalytic performance relying on specific nanostructures and electronic configurations.Herein,nickel was introduced as the dopant into one-dimensional (1D) hierarchical Co4N structures,achieving effective electronic regulation of Co4N toward high OER performance.The amount of Co3+increased after Ni-doping,and the in-situ formed surface oxyhydroxide during OER enhanced the electrocatalytic kinetics.Meanwhile,the 1D hierarchical structure further promoted the performances of Co4N owing to the high electrical conductivity and abundant activesites on the rough surface.As expected,the optimal Ni-doped Co4N with a Ni/Co molar ratio of 0.25 provides a small overpotential of 233 mV at a current density of 10 mA cm^(-2),with a low Tafel slope of 61 mV dec^(-1),and high long-term stability in 1.0 mol L^(-1)KOH.Following these results,the enhancement by doping the Co4N nanowire bundles with Fe and Cu was further evidenced for the OER.