Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating...Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating In(acac)3and Ga(acac)3isopropanol precursors followed by low-temperature thermal treatment was developed to fabricate In_(2)O_(3)and Ga2O3cathode buffer layers (CBLs).The introduction of In_(2)O_(3)or Ga2O3CBLs endows PM6:Y6-based OSCs with outstanding performance and high PCEs of 16.17%and 16.01%,respectively.Comparison studies present that the In_(2)O_(3)layer possesses a work function (WF) of 4.58 eV,which is more favorable for the formation of ohmic contact compared with the Ga2O3layer with a WF of 5.06 eV and leads to a higher open circuit voltage for the former devices.Electrochemical impedance spectroscopy was performed to reveal how In_(2)O_(3)and Ga2O3affect the internal charge transfer and the origin of their performance difference.Although In_(2)O_(3)possesses lower series resistance loss,Ga2O3has a higher recombination resistance,which enhances the device fill factor and compensates for its series resistance loss to some extent.Comparative analysis of the photo-physics of In_(2)O_(3)and Ga2O3suggests that both are excellent CBLs for highly efficient OSCs.展开更多
基金supported by the National Natural Science Foundation of China (51573042,61874148,51873007,5181101540 and 21835006)the Fundamental Research Funds for the Central Universities in China (2019MS025 and 2018MS032)the State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (LAPS20003)。
文摘Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE).Herein,a mild solution process of spin-coating In(acac)3and Ga(acac)3isopropanol precursors followed by low-temperature thermal treatment was developed to fabricate In_(2)O_(3)and Ga2O3cathode buffer layers (CBLs).The introduction of In_(2)O_(3)or Ga2O3CBLs endows PM6:Y6-based OSCs with outstanding performance and high PCEs of 16.17%and 16.01%,respectively.Comparison studies present that the In_(2)O_(3)layer possesses a work function (WF) of 4.58 eV,which is more favorable for the formation of ohmic contact compared with the Ga2O3layer with a WF of 5.06 eV and leads to a higher open circuit voltage for the former devices.Electrochemical impedance spectroscopy was performed to reveal how In_(2)O_(3)and Ga2O3affect the internal charge transfer and the origin of their performance difference.Although In_(2)O_(3)possesses lower series resistance loss,Ga2O3has a higher recombination resistance,which enhances the device fill factor and compensates for its series resistance loss to some extent.Comparative analysis of the photo-physics of In_(2)O_(3)and Ga2O3suggests that both are excellent CBLs for highly efficient OSCs.
