Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxi...Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.展开更多
We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography （EBL）. The proximity effect is extended to develop a flexible and practical method fo...We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography （EBL）. The proximity effect is extended to develop a flexible and practical method for preparing metal （e. g. Au or Ag） nanogaps and arrays in combination with a transfer process （e. g., deposition/lift-off）. Different from the direct gap-writing process,the nanogap precursor structures （nanoconnections） were designed by GDSII software and then written by electron beam. Following a deposition and lift-off process, the metal nanogaps were obtained and the nanogap size can be lowered to -10nm by controlling the exposure dose in EBL.展开更多
文摘Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.
基金the National Natural Science Foundation of China(No.20704042)the Shanghai Pujiang Talent Plan(No.07PJ14095)+1 种基金the CAS Knowledge Innovation Programthe Committee of Science and Technology of Shanghai(Nos.06XD14020,07JC14058,0752nm016)~~
文摘We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography （EBL）. The proximity effect is extended to develop a flexible and practical method for preparing metal （e. g. Au or Ag） nanogaps and arrays in combination with a transfer process （e. g., deposition/lift-off）. Different from the direct gap-writing process,the nanogap precursor structures （nanoconnections） were designed by GDSII software and then written by electron beam. Following a deposition and lift-off process, the metal nanogaps were obtained and the nanogap size can be lowered to -10nm by controlling the exposure dose in EBL.
