In order to use electron beam as a movable welding heat source and whose energy distribution along its moving trace can be controlled, a method of electron beam scanning track and scanning mode control was put forward...In order to use electron beam as a movable welding heat source and whose energy distribution along its moving trace can be controlled, a method of electron beam scanning track and scanning mode control was put forward. Based on it, the electron beam scanning track and scanning mode can be edited at will according to actual requirements, and the energy input of each point of the scanning track can be controlled. In addition, the scanning frequency and points control, real time adjusting of the scanning track etc. were explained. This method can be used in electron beam brazing, surface modification, surface heat treatment etc.展开更多
The beam deflectors based on electro-optic phased array（EOPA） is mainly described, and then an analysis on existing control schemes for driving the EOPA beam deflectors, based on custom hard-wired electronics or bas...The beam deflectors based on electro-optic phased array（EOPA） is mainly described, and then an analysis on existing control schemes for driving the EOPA beam deflectors, based on custom hard-wired electronics or based on software in a microcontroUer, is made. Compared with these, a driving and control system for a multi-channel EOPA beam deflector is presented, in which the control assignment is implemented with a field programmable gate array（FPGA） chip. For different performance requirements, two control schemes, one with the serial scheme and another with the parallel scheme, have been explored and rapidly prototyped in Xilinx FPGA chips. With the control structures for the EOPA beam deflector, scanning rates of 588 kHz and 5 MHz can be respectivelv reached.展开更多
Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact...Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.展开更多
基金Commission of Science Technology and In-dustry for National Defense Project:Electron beam brazing tech-nology research ( 4 13 183 2 3 )
文摘In order to use electron beam as a movable welding heat source and whose energy distribution along its moving trace can be controlled, a method of electron beam scanning track and scanning mode control was put forward. Based on it, the electron beam scanning track and scanning mode can be edited at will according to actual requirements, and the energy input of each point of the scanning track can be controlled. In addition, the scanning frequency and points control, real time adjusting of the scanning track etc. were explained. This method can be used in electron beam brazing, surface modification, surface heat treatment etc.
基金National Natural Science Foundation of China(60477042)
文摘The beam deflectors based on electro-optic phased array（EOPA） is mainly described, and then an analysis on existing control schemes for driving the EOPA beam deflectors, based on custom hard-wired electronics or based on software in a microcontroUer, is made. Compared with these, a driving and control system for a multi-channel EOPA beam deflector is presented, in which the control assignment is implemented with a field programmable gate array（FPGA） chip. For different performance requirements, two control schemes, one with the serial scheme and another with the parallel scheme, have been explored and rapidly prototyped in Xilinx FPGA chips. With the control structures for the EOPA beam deflector, scanning rates of 588 kHz and 5 MHz can be respectivelv reached.
基金Supported by "973" National Key Basic Research Program ( No. 2002CB311905) andYoung Teacher Foundation of Tianjin University.
文摘Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is designed and fabricated. Molecule beam extension. selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance (NDR) and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT.the groove is the key factor producing NDR.
