Because short pulse Nd:YAG laser of nanosecond pulse-width and high peak power has a unique capability to improve the mechanical properties of metal parts,a study on the development of high peak power short pulse from...Because short pulse Nd:YAG laser of nanosecond pulse-width and high peak power has a unique capability to improve the mechanical properties of metal parts,a study on the development of high peak power short pulse from Nd:YAG laser along with its peening application has been performed.The design scheme of laser and the characteristic of laser beam transmission are presented and discussed.A pulse energy of 25 J with 15 ns pulse-width and a maximum peak power of 1660 k W laser system which use one oscillation and eight amplifiers has been achieved.Laser beam has a max divergence angle of 0.03 mrad,a pulse-to-pulse pulse-width stability of±0.1 ns,and the pulse-to-pulse energy stability factors of less than±2.8%.A low value of divergence means an easier modification of a nearly hat-top laser beam intensity profile and an easier transmission of laser beam.To evaluate the performance of the laser system,several metal materials are processed.Laser peening quality and efficiency are analyzed by using an optical microscope,a transmission electron microscope,and an X-ray diffraction device.The processing results show that the performance of this laser system is excellent.展开更多
Zinc chalcogenide which includes zinc selenide,zinc sulphide,zinc telluride and mixed crystals of these shows a great potential as an optoelectronic device material. Zinc selenotelluride is a suitable material for vis...Zinc chalcogenide which includes zinc selenide,zinc sulphide,zinc telluride and mixed crystals of these shows a great potential as an optoelectronic device material. Zinc selenotelluride is a suitable material for visible light emitting devices which are expected to cover the spectral range from yellow to blue. In our present study the composition controlled ZnSe1-xTex films with different Te content x = 0,0.2,0.4,0.6,0.8 and 1.0 were deposited by electron beam (EB) evaporation technique. GaAs films were deposited by vacuum evaporation route on indium tin oxide (ITO) substrates which were used as base for depositing the ZnSe1-xTex film. The band-gap energy change in the entire composition range was determined at room temperature by photoluminescence (PL) spectroscopy. The peak observed at about 2.56 eV shows the effect of solid solution formation between ZnSe and ZnTe which modifies the lattice and consequently the band edge emission characteristics. The heterostructures showed three peaks in the visible region of white light spectrum.展开更多
Electron energy levels and positron states have been calculated for cadmium and zinc chalcogenide compounds within the pseudo-potential approach and the independent particle model.Furthermore,the present contribution ...Electron energy levels and positron states have been calculated for cadmium and zinc chalcogenide compounds within the pseudo-potential approach and the independent particle model.Furthermore,the present contribution deals with the electron and positron chemical potentials allowing the calculation of the positron affinity to different materials of interest and hetero-structures formed by these materials.Besides,we here determine the positron diffusion constant by means of the positron deformation potential.An attempt has been made to scale positron affinity and diffusion constant with the lattice constant and the band gap energy,respectively.Such scaling is found to be not possible.The information gathered by the present study is of prime importance for a better understanding of positron trapping at interfaces and precipitates and should be useful in slow positron beam experiments.展开更多
基金supported by the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2012AA041310)
文摘Because short pulse Nd:YAG laser of nanosecond pulse-width and high peak power has a unique capability to improve the mechanical properties of metal parts,a study on the development of high peak power short pulse from Nd:YAG laser along with its peening application has been performed.The design scheme of laser and the characteristic of laser beam transmission are presented and discussed.A pulse energy of 25 J with 15 ns pulse-width and a maximum peak power of 1660 k W laser system which use one oscillation and eight amplifiers has been achieved.Laser beam has a max divergence angle of 0.03 mrad,a pulse-to-pulse pulse-width stability of±0.1 ns,and the pulse-to-pulse energy stability factors of less than±2.8%.A low value of divergence means an easier modification of a nearly hat-top laser beam intensity profile and an easier transmission of laser beam.To evaluate the performance of the laser system,several metal materials are processed.Laser peening quality and efficiency are analyzed by using an optical microscope,a transmission electron microscope,and an X-ray diffraction device.The processing results show that the performance of this laser system is excellent.
文摘Zinc chalcogenide which includes zinc selenide,zinc sulphide,zinc telluride and mixed crystals of these shows a great potential as an optoelectronic device material. Zinc selenotelluride is a suitable material for visible light emitting devices which are expected to cover the spectral range from yellow to blue. In our present study the composition controlled ZnSe1-xTex films with different Te content x = 0,0.2,0.4,0.6,0.8 and 1.0 were deposited by electron beam (EB) evaporation technique. GaAs films were deposited by vacuum evaporation route on indium tin oxide (ITO) substrates which were used as base for depositing the ZnSe1-xTex film. The band-gap energy change in the entire composition range was determined at room temperature by photoluminescence (PL) spectroscopy. The peak observed at about 2.56 eV shows the effect of solid solution formation between ZnSe and ZnTe which modifies the lattice and consequently the band edge emission characteristics. The heterostructures showed three peaks in the visible region of white light spectrum.
文摘Electron energy levels and positron states have been calculated for cadmium and zinc chalcogenide compounds within the pseudo-potential approach and the independent particle model.Furthermore,the present contribution deals with the electron and positron chemical potentials allowing the calculation of the positron affinity to different materials of interest and hetero-structures formed by these materials.Besides,we here determine the positron diffusion constant by means of the positron deformation potential.An attempt has been made to scale positron affinity and diffusion constant with the lattice constant and the band gap energy,respectively.Such scaling is found to be not possible.The information gathered by the present study is of prime importance for a better understanding of positron trapping at interfaces and precipitates and should be useful in slow positron beam experiments.
