The X-rays with energy from 1 keV to 60 keV in the interaction of highly charged ions (HCI) with a variety of solid surfaces were investigated at the research platform for atomic physics with the electron cyclone reso...The X-rays with energy from 1 keV to 60 keV in the interaction of highly charged ions (HCI) with a variety of solid surfaces were investigated at the research platform for atomic physics with the electron cyclone resonance (ECR) ion resource at IMP. We altered the projectile kinetic energy from 150 keV to about 400 keV. The X-ray excited by the projectile with the surface is shown in Fig.l, and a threshold of the projectile kinetic energy for this excitation is observed. Combining the colliding theory of classic electrodynamics with the concept of quantized orbits, we crudely give this threshold energy Tm as follows,展开更多
The two-dimensional atomically thin insulator hexagonal boron nitride （h-BN） constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or inte...The two-dimensional atomically thin insulator hexagonal boron nitride （h-BN） constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or interface trap states, makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated on a chip scale, we show tunnel magnetoresistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.展开更多
We study theoretically the effect of weak external magnetic fields on persistent spin helix states in semiconductor two-dimensional electron gases with both Rashba and linear-in-momentum Dresselhaus spin-orbit couplin...We study theoretically the effect of weak external magnetic fields on persistent spin helix states in semiconductor two-dimensional electron gases with both Rashba and linear-in-momentum Dresselhaus spin-orbit coupling.We show that in the presence of weak external magnetic fields, some basic properties of a persistent spin helix state,including the dispersion relation between the decay time and the magnitude of the wavevector, the maximum decay time and the value of the characteristic magnitude of the wavevector at which the maximum decay time occurs, will all depend sensitively on the directions of applied external magnetic fields.展开更多
文摘The X-rays with energy from 1 keV to 60 keV in the interaction of highly charged ions (HCI) with a variety of solid surfaces were investigated at the research platform for atomic physics with the electron cyclone resonance (ECR) ion resource at IMP. We altered the projectile kinetic energy from 150 keV to about 400 keV. The X-ray excited by the projectile with the surface is shown in Fig.l, and a threshold of the projectile kinetic energy for this excitation is observed. Combining the colliding theory of classic electrodynamics with the concept of quantized orbits, we crudely give this threshold energy Tm as follows,
文摘The two-dimensional atomically thin insulator hexagonal boron nitride （h-BN） constitutes a new paradigm in tunnel based devices. A large band gap, along with its atomically flat nature without dangling bonds or interface trap states, makes it an ideal candidate for tunnel spin transport in spintronic devices. Here, we demonstrate the tunneling of spin-polarized electrons through large area monolayer h-BN prepared by chemical vapor deposition in magnetic tunnel junctions. In ferromagnet/h-BN/ferromagnet heterostructures fabricated on a chip scale, we show tunnel magnetoresistance at room temperature. Measurements at different bias voltages and on multiple devices with different ferromagnetic electrodes establish the spin polarized tunneling using h-BN barriers. These results open the way for integration of 2D monolayer insulating barriers in active spintronic devices and circuits operating at ambient temperature, and for further exploration of their properties and prospects.
基金Supported by the National Natural Science Foundation of China under Grant No.10874049
文摘We study theoretically the effect of weak external magnetic fields on persistent spin helix states in semiconductor two-dimensional electron gases with both Rashba and linear-in-momentum Dresselhaus spin-orbit coupling.We show that in the presence of weak external magnetic fields, some basic properties of a persistent spin helix state,including the dispersion relation between the decay time and the magnitude of the wavevector, the maximum decay time and the value of the characteristic magnitude of the wavevector at which the maximum decay time occurs, will all depend sensitively on the directions of applied external magnetic fields.
