磁共振引导放疗中射野外电子流效应的初步研究

目的研究1.5 T磁共振引导放疗中的电子流效应(ESE)及其对射野外剂量的影响。方法首先,利用Monaco系统研究了均匀射野(5 cm×5 cm)在规则几何模体外入射端和出射端的空气中ESE。其次,回顾性地选取在常规加速器上接受过放疗的1例喉癌病例和1例乳腺癌病例,重新用Unity机器模型在Monaco系统中进行剂量计算,研究磁场下ESE对射野外皮肤剂量的影响。结果在磁场作用下,规则几何模体的入射端和出射端都观察到ESE效应,但出射端ESE明显强于入射端。在喉癌病例中,ESE现象不明显,对射野外皮肤剂量影响很小。在乳腺癌病例中,射野外ESE会延伸到下颌附近,导致下颌皮肤剂量升高,1 cm^(3)体积对应剂量D_(1 cm^(3))=454.6 cGy。添加1 cm虚拟防护膜后,下颌皮肤剂量D_(1 cm^(3))降低到113.6 cGy,几乎与无磁场情况下相当(D_(1 cm^(3))=92.5 cGy)。结论磁场下的ESE会改变射野外的剂量分布,导致局部剂量升高。在喉癌病例中ESE不明显,但对于乳腺癌病例,ESE可延伸到下颌位置,外加防护膜对ESE具有较好的屏蔽效果。

Performance Analysis of RF Spiral Inductor with Gradually Changed Metal Width and Space

To decrease the metal losses of RF spiral inductor,a novel layout structure with gradually reduced metal line width and space from outside to inside is presented. This gradual changed inductor has less eddy-current effect than the conventional inductor of fixed metal width and space. So the series resistance can be reduced and the quality （Q） factor of the inductor relating to metal losses is increased. The obtained experimental results corroborate the validity of the proposed method. For a 6nH inductor on high-resistivity silicon at 2.46GHz,Q factor of 14.25 is 11.3% higher than the conventional inductor with the same layout size. This inductor can be integrated with radio frequency integrated circuits to gain better performance in RF front end of a wireless communication system.

Direct Tunneling Currents Through Gate Dielectrics in Deep Submicron MOSFETs

A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, where valence band mixing is taken into account.By comparing to the experiments, the model is demonstrated to be applicable to both electron and hole tunneling c urrents in CMOS devices.The effect of the dispersion in oxide energy gap on the tunneling current is also studied.This model can be further extended to study th e direct tunneling current in future high-k materials.

Gate breakdown of high-voltage P-LDMOS and improved methods

The failure experiments of the P-LDMOS （lateral double diffused metal oxide semiconductor） demonstrate that the high peak electrical fields in the channel region of high-voltage P-LDMOS will reinforce the hot-carrier effect, which can greatly reduce the reliability of the P-LDMOS. The electrical field distribution and two field peaks along the channel surface are proposed by Tsuprem-4 and Medici. The reason of resulting in the two electrical field peaks is also discussed. Two ways of reducing the two field peaks, which are to increase the channel length and to reduce the channel concentration, are also presented. The experimental results show that the methods presented can effectively improve the gate breakdown voltage and greatly improve the reliability of the P-LDMOS.

A Novel Empirical Model of I-V Characteristics for LDD MOSFET Including Substrate Current

A compact model for LDD MOSFET is proposed,which involves the hyperbolic tangent function description and the physics of device with emphasis on the substrate current modeling.The simulation results demonstrate good agreement with measurement,and show that deep submicron LDD MOSFET has larger substrate current than submicron device does.The improved model costs low computation consumption,and is effective in manifestation of hot carrier effect and other effects in deep submicron devices,in turn is suitable for design and reliability analysis of scaling down devices.

Manipulation of nanoparticles by AC electrothermal effect in laboratory-on-a-chip applications

Microflow driven by AC electrothermal pumping electrolytes with high conductivity fluid （ACET） effect is explored in order to seek new methods for （more than 0. 02 S/m） at microscale. Based on the ACET theory, a physical model for particle trapping is established by a set of electrostatics, heat transfer and fluid dynamic equations. Further, fluid velocity fields are predicted using the software FEMLAB. Experiments are performed which verify the numerical results. The experimental results show that with appropriate electrode design, ACET effect can work on fluids with conductivity up to I. 53 S/m and trap particles at a low voltage. ACET devices can be readily integrated on chip into a microsystem. This offers insight into designing ACET lab-chips.

Quantum current and Coulomb blockade effect in the mutual inductance coupled mesoscopic system with active source

Based on the charge discreteness,the property of quantum current and the effects of Coulomb blockade have been investigated for the mutual inductance coupled mesoscopic system with active source in external magnetic field.The relationships between quantum current and the conditions of Coulomb blockade in the coupled dual-ring system are given here.

Effects of Trapped Electrons on Off-axis Lower Hybrid Current Drive

The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized.

Effect of Screw-Dislocation on Electrical Properties of Spiral-Type Bi2Se3 Nanoplates

We systematically investigated the electrical nanoplates through field effect transistor and properties of spiral-type and smooth Bi2Se3 conductive atomic force microscopy （CAFM） measurement. It is observed that both nanoplates possess high conductivity and show metallic-like behavior. Compared to the smooth nanoplate, the spiral-type one exhibits the higher carrier concentration and lower mobility. CAFM characterization reveals that the conductance at the screw-dislocation edge is even higher than that on the terrace, implying that the dislocation can supply excess carriers to compensate the low mobility and achieve high conductivity. The unique structure and electrical properties make the spiral-type Bi2 Se3 nanoplates a good candidate for catalysts and gas sensors.

Controllable Spin Polarization of Charge Current by Rashba Spin Orbital Coupling

We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic fourterminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas （2DEG） with Rashba spin orbital interaction （RSOI）, one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Biittiker formalism, we found that when a longitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.

5 nm NiCoP nanoparticles coupled with g-C3N4 as high-performance photocatalyst for hydrogen evolution

Graphitic carbon nitride(g-C3N4) coupled with NiCoP nanoparticles with sizes around 5 nm have been fabricated via a controllable alcohothermal process. NiCoP is an excellent electron conductor and cocatalyst in photocatalytic reactions. The coupling between tiny NiCoP nanoparticles and g-C3N4 through in-situ fabrication strategy could be a promising way to eliminate the light screening effect, hinder the recombination of photo-induced charge carriers, and improve the charge transfer. The NiCoP/g-C3N4 nanohybrids exhibit an excellent photocatalytic activity in the hydrogen generation, with a significantly improved performance compared with original g-C3N4, CoP/g-C3N4 and Ni2P/g-C3N4, respectively. This study paves a new way to design transition metal phosphides-based photocatalysts for hydrogen production.

Theoretical study of current-voltage characteristics of carbon nanotube wire functionalized with hydrogen atoms

A functionalized single-walled carbon nanotube (SWCNT) of a finite length with a ring-like hydrogenation around its surface is designed toward fabrication of a molecular field-effect transistor (FET) device. The molecular wire thus designed is equipped with a quantum dot inside, which is confirmed by theoretical analysis for electronic transport. In particular, the current-voltage (I-V) characteristics under influence of the gate voltage are discussed in detail.

Electrical control of antiferromagnetic metal up to 15 nm

Manipulation of antiferromagnetic(AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in[Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction,the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.

A trilayer process for the fabrication of Al phase qubits

Herein we develop an Al/AlOx/Al trilayer process, feasible to fabricate complex circuits with wiring crossovers, for the preparation of A1 junctions and phase qubits. The AlOx layer is obtained by in situ thermal oxidation, which provides high-quality junction tunnel barriers. The A1 junctions show a considerably low leakage current and the Josephson critical current density can be conveniently controlled in the range of a few to above 100 A/cm2, which is favorable in the phase qubit application. Macroscopic quantum tunneling, energy spectrum, energy relaxation time, Rabi oscillation, and Ramsey interference of the A1 phase qubits are measured, demonstrating clearly quantum coherent dynamics with a timescale of 10 ns. Further improvements of the coherent dynamic properties of the device are discussed.

Scanning Tunneling Electron Transport into a Kondo Lattice

We theoretically present the results for a scanning tunneling transport between a metallic tip and a Kondo lattice.We calculate the density of states(DOS)and the tunneling current and differential conductance(DC)under different conduction-fermion band hybridization and temperature in the Kondo lattice.It is found that the hybridization strength and temperature give asymmetric coherent peaks in the DOS separated by the Fermi energy.The corresponding current and DC intensity depend on the temperature and quantum interference effect among the c-electron and f-electron states in the Kondo lattice.