Spraying 1-2 mmol/L solution of NaHSO 3 on rice ( Oryza sativa L.) leaves resulted in the enhancement of net photosynthetic rate for more than three days. It was also observed that NaHSO 3 application caused incr...Spraying 1-2 mmol/L solution of NaHSO 3 on rice ( Oryza sativa L.) leaves resulted in the enhancement of net photosynthetic rate for more than three days. It was also observed that NaHSO 3 application caused increases both in ATP content in leaves and the millisecond_delayed light emission of leaves. The increase in net photosynthetic rate caused by NaHSO 3 treatment was similar to that by PMS (phenazine methosulfate) treatment. The grain yield of treated rice was enhanced approximately by 10% after duplicated application of NaHSO 3 in milk_ripening stage. It is suggested that the enhancement of photosynthesis by NaHSO 3 treatment resulted from the effect of increasing ATP supplement. Concomitant with an increase in the photosynthetic rate and ATP content in leaves, the transient increase in chlorophyll fluorescence after the termination of actinic light, which could be used as an index of the cyclic electron flow, was also enhanced by low concentration of NaHSO 3 treatment. Basing on these results it is proposed that the increase in rice photosynthesis caused by low concentrations of NaHSO 3 could be due to the stimulation of the cyclic electron flow around PSⅠ which in turn the enhancement of the coupled photophosphorylation and photosynthesis.展开更多
A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an M...A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.展开更多
An analytical model is presented to calculate the disassociation probability and the external quantum efficiency at high field in doped organic electrophosphorescence(EPH) devices. The charge recombination process and...An analytical model is presented to calculate the disassociation probability and the external quantum efficiency at high field in doped organic electrophosphorescence(EPH) devices. The charge recombination process and the triplet(T)-triplet(T) annihilation processes are taken into account in this model. The influences of applied voltage and the thickness of the device on the disassociation probability, and of current density and the thickness of the device on the external quantum efficiency are studied thoroughly by including and ignoring the disassociation of excitons. It is found that the dissociation probability of excitons will come close to 1 at high electric field, and the external EPH quantum efficiency is almost the same at low electric field. There is a large discrepancy of the external EPH quantum efficiency at high electric field for including or ignoring the disassociation of excitons.展开更多
The chemical compositions of Ag-Er co-doped phosphate and silicate glasses were investigated with X-ray photoelectron spectroscopy with the purpose to identify the chemical state of silver. The analysis of the Ag 3d c...The chemical compositions of Ag-Er co-doped phosphate and silicate glasses were investigated with X-ray photoelectron spectroscopy with the purpose to identify the chemical state of silver. The analysis of the Ag 3d core lines show the presence of nanometer-sized silver particles in each of the annealed samples,even if these Ag 3d lines appear to be very different from each other. We explain these results as a different interaction of silver with the two glasses matrix,which leads to a different nucleation rate of the Ag clusters.展开更多
An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurem...An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurements of bombarded sample gave the resistance value of four orders greater than that of un- bombarded. The electric field shield effect induced by doped GaP was effectively decreased to approximate semi-insulator material. The system has the voltage sensitivity of about 40 mV/21/Hz with the microwave frequency of 1.15 GHz.展开更多
Modification of poly(tetrafluoroethylene)(PTFE) films with 2-methacryloyloxyethyl phosphorylcholine(MPC) was performed by low-temperature plasma treatment and grafting polymerization.Surface properties of PTFE were ch...Modification of poly(tetrafluoroethylene)(PTFE) films with 2-methacryloyloxyethyl phosphorylcholine(MPC) was performed by low-temperature plasma treatment and grafting polymerization.Surface properties of PTFE were characterized by attenuated total reflectance Fourier transform infrared(ATR-FTIR) spectra,X-ray photoelectron spectroscopy(XPS) ,and static contact angle.The results show that MPC has been grafted onto PTFE film surface successfully.Contact angle for the modified PTFE films in the water decreased from 108°to 58.25°,while surface energy increased from 17.52 mN/m to 45.47 mN/m.The effects of plasma treatment time,monomer concentration and grafting time on degree of grafting were determined.In the meanwhile,blood compatibility of the PTFE films was studied by checking thrombogenic time of blood plasma.展开更多
Mn-doped ZnS quantum dots/methyl violet nanohybrids were explored to develop a novel room temperature phosphorescence (RTP) sensor for the detection of DNA. Methyl violet (MV) as the electron acceptors was adsorbed on...Mn-doped ZnS quantum dots/methyl violet nanohybrids were explored to develop a novel room temperature phosphorescence (RTP) sensor for the detection of DNA. Methyl violet (MV) as the electron acceptors was adsorbed on the surface of the quantum dots (QDs) to quench the RTP of the Mn-doped ZnS QDs through an electron-transfer process under excitation. The addition of DNA recovered the RTP signal of the Mn-doped ZnS QDs due to the binding of MV with DNA and the removal of MV from the surface of the Mn-doped ZnS QDs. Under the optimal conditions, the enhanced RTP intensity of the Mn-doped ZnS QDs/MV nanohybrids linearly increased with the concentration of DNA from 0.08 to 12 mg L-1 with the detection limit of 33.6 μg L-1. The relative standard deviation for eleven replicate detections of the reagent blank was 3.7%. The developed method was applied to the detection of DNA in spiked urine samples with recoveries of 96%-103% without interference from nonspecific fluorescence.展开更多
We report the electronic band structure and optical parameters of X-Phosphides (X=B, AI, Ga, In) by first-principles technique based on a new approximation known as modified Becke-Johnson (roB J). This potential i...We report the electronic band structure and optical parameters of X-Phosphides (X=B, AI, Ga, In) by first-principles technique based on a new approximation known as modified Becke-Johnson (roB J). This potential is considered more accurate in elaborating excited states properties of insulators and semiconductors as compared to LDA and GGA. The present calculated band gaps values of BP, AlP, GaP, and InP are 1.867 eV, 2.268 eV, 2.090 eV, and 1.377 eV respectively, which are in close agreement to the experimental results. The band gap values trend in this study is as: E9 (mBJ-GGA/LDA) 〉 E9 (GGA) 〉 Eg (LDA). Optical parametric quantities (dielectric constant, refractive index, reflectivity and optical conductivity) which based on the band structure are aiso presented and discussed. BP, AlP, GaP, and InP have strong absorption in between the energy range 4-9 eV, 4-7 ev, 3-7 eV, and 2-7 eV respectively. Static dielectric constant, static refractive index and coefficient of reflectivity at zero frequency, within mBJ-GGA, are also calculated. BP, AIP, GaP, and InP show significant optical conductivity in the range 5.2-10 eV, 4.3-8 eV, 3.5- 7.2 eV, and 3.2-8 eV respectively. The present study endorses that the said compounds can be used in opto-electronic applications, for different energy ranges.展开更多
We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl(CBP) doped with 8% tris(2-phenylpyridine) iridium(Irppy3) for use in efficient green phosphorescent organic light-emitting devices(PHOLEDs) combined wi...We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl(CBP) doped with 8% tris(2-phenylpyridine) iridium(Irppy3) for use in efficient green phosphorescent organic light-emitting devices(PHOLEDs) combined with different electron transport layers of Alq and BAlq. The PHOLEDs exhibit maximum current efficiency and power efficiency of 19.8 cd/A and 6.21 lm/W, respectively. The high performance of such PHOLEDs is attributed to the better electron mobile ability of BAlq and sub-monolayer quinacridone(QAD) as carrier trapping layer and equal charge carrier mobilities of hole and electron to form the broad carrier recombination zone in the emitting layer, which can 1reduce the triplet-triplet annihilation and improve the efficiency of the device.展开更多
文摘Spraying 1-2 mmol/L solution of NaHSO 3 on rice ( Oryza sativa L.) leaves resulted in the enhancement of net photosynthetic rate for more than three days. It was also observed that NaHSO 3 application caused increases both in ATP content in leaves and the millisecond_delayed light emission of leaves. The increase in net photosynthetic rate caused by NaHSO 3 treatment was similar to that by PMS (phenazine methosulfate) treatment. The grain yield of treated rice was enhanced approximately by 10% after duplicated application of NaHSO 3 in milk_ripening stage. It is suggested that the enhancement of photosynthesis by NaHSO 3 treatment resulted from the effect of increasing ATP supplement. Concomitant with an increase in the photosynthetic rate and ATP content in leaves, the transient increase in chlorophyll fluorescence after the termination of actinic light, which could be used as an index of the cyclic electron flow, was also enhanced by low concentration of NaHSO 3 treatment. Basing on these results it is proposed that the increase in rice photosynthesis caused by low concentrations of NaHSO 3 could be due to the stimulation of the cyclic electron flow around PSⅠ which in turn the enhancement of the coupled photophosphorylation and photosynthesis.
文摘A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.
基金Excellent Youth Foundation of Hunan Province(03JJY1008) Science Foundation for Post-doctorate of China(2004035083) National Science Foundation of Hunan Province(06JJ20034)
文摘An analytical model is presented to calculate the disassociation probability and the external quantum efficiency at high field in doped organic electrophosphorescence(EPH) devices. The charge recombination process and the triplet(T)-triplet(T) annihilation processes are taken into account in this model. The influences of applied voltage and the thickness of the device on the disassociation probability, and of current density and the thickness of the device on the external quantum efficiency are studied thoroughly by including and ignoring the disassociation of excitons. It is found that the dissociation probability of excitons will come close to 1 at high electric field, and the external EPH quantum efficiency is almost the same at low electric field. There is a large discrepancy of the external EPH quantum efficiency at high electric field for including or ignoring the disassociation of excitons.
基金This work was partially supported by MIUR-FIRB (RBNE012N3X-005) and by PAT-FAPVU projects.
文摘The chemical compositions of Ag-Er co-doped phosphate and silicate glasses were investigated with X-ray photoelectron spectroscopy with the purpose to identify the chemical state of silver. The analysis of the Ag 3d core lines show the presence of nanometer-sized silver particles in each of the annealed samples,even if these Ag 3d lines appear to be very different from each other. We explain these results as a different interaction of silver with the two glasses matrix,which leads to a different nucleation rate of the Ag clusters.
基金National Natural Science Foundation of China!(No. 69876014 )Research Fund for the Doctoral Program of Higher Education!(RFDP
文摘An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurements of bombarded sample gave the resistance value of four orders greater than that of un- bombarded. The electric field shield effect induced by doped GaP was effectively decreased to approximate semi-insulator material. The system has the voltage sensitivity of about 40 mV/21/Hz with the microwave frequency of 1.15 GHz.
文摘Modification of poly(tetrafluoroethylene)(PTFE) films with 2-methacryloyloxyethyl phosphorylcholine(MPC) was performed by low-temperature plasma treatment and grafting polymerization.Surface properties of PTFE were characterized by attenuated total reflectance Fourier transform infrared(ATR-FTIR) spectra,X-ray photoelectron spectroscopy(XPS) ,and static contact angle.The results show that MPC has been grafted onto PTFE film surface successfully.Contact angle for the modified PTFE films in the water decreased from 108°to 58.25°,while surface energy increased from 17.52 mN/m to 45.47 mN/m.The effects of plasma treatment time,monomer concentration and grafting time on degree of grafting were determined.In the meanwhile,blood compatibility of the PTFE films was studied by checking thrombogenic time of blood plasma.
基金supported by the National Natural Science Foundation of China (20935001)the National Basic Research Program of China (2011CB707703)+1 种基金the Tianjin Natural Science Foundation (10JCZDJC16300) for YAN XiuPingScientific Research Founda-tion of Education Commission of Hubei Province (Q20111010) for HE Yu
文摘Mn-doped ZnS quantum dots/methyl violet nanohybrids were explored to develop a novel room temperature phosphorescence (RTP) sensor for the detection of DNA. Methyl violet (MV) as the electron acceptors was adsorbed on the surface of the quantum dots (QDs) to quench the RTP of the Mn-doped ZnS QDs through an electron-transfer process under excitation. The addition of DNA recovered the RTP signal of the Mn-doped ZnS QDs due to the binding of MV with DNA and the removal of MV from the surface of the Mn-doped ZnS QDs. Under the optimal conditions, the enhanced RTP intensity of the Mn-doped ZnS QDs/MV nanohybrids linearly increased with the concentration of DNA from 0.08 to 12 mg L-1 with the detection limit of 33.6 μg L-1. The relative standard deviation for eleven replicate detections of the reagent blank was 3.7%. The developed method was applied to the detection of DNA in spiked urine samples with recoveries of 96%-103% without interference from nonspecific fluorescence.
基金Supported by (Foreign Academic Visitor Grant) of Universiti Teknologi Malaysia (UTM) Skudai,Johor,Malaysia for the Grant No.JI3000077264D035
文摘We report the electronic band structure and optical parameters of X-Phosphides (X=B, AI, Ga, In) by first-principles technique based on a new approximation known as modified Becke-Johnson (roB J). This potential is considered more accurate in elaborating excited states properties of insulators and semiconductors as compared to LDA and GGA. The present calculated band gaps values of BP, AlP, GaP, and InP are 1.867 eV, 2.268 eV, 2.090 eV, and 1.377 eV respectively, which are in close agreement to the experimental results. The band gap values trend in this study is as: E9 (mBJ-GGA/LDA) 〉 E9 (GGA) 〉 Eg (LDA). Optical parametric quantities (dielectric constant, refractive index, reflectivity and optical conductivity) which based on the band structure are aiso presented and discussed. BP, AlP, GaP, and InP have strong absorption in between the energy range 4-9 eV, 4-7 ev, 3-7 eV, and 2-7 eV respectively. Static dielectric constant, static refractive index and coefficient of reflectivity at zero frequency, within mBJ-GGA, are also calculated. BP, AIP, GaP, and InP show significant optical conductivity in the range 5.2-10 eV, 4.3-8 eV, 3.5- 7.2 eV, and 3.2-8 eV respectively. The present study endorses that the said compounds can be used in opto-electronic applications, for different energy ranges.
基金supported by the Major Project of Science and Technology Office of Fujian Province of China(No.2014H0042)the Natural Science Foundation of Fujian Province of China(No.2015J01664)+1 种基金the Project of Science and Technology Research of Quanzhou in Fujian Province of China(Nos.2013Z125 and 2014Z137)the 2016 Annual National or Ministries Preparatory Research Foundation Project in Quanzhou Normal University(No.2016YYKJ21)
文摘We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl(CBP) doped with 8% tris(2-phenylpyridine) iridium(Irppy3) for use in efficient green phosphorescent organic light-emitting devices(PHOLEDs) combined with different electron transport layers of Alq and BAlq. The PHOLEDs exhibit maximum current efficiency and power efficiency of 19.8 cd/A and 6.21 lm/W, respectively. The high performance of such PHOLEDs is attributed to the better electron mobile ability of BAlq and sub-monolayer quinacridone(QAD) as carrier trapping layer and equal charge carrier mobilities of hole and electron to form the broad carrier recombination zone in the emitting layer, which can 1reduce the triplet-triplet annihilation and improve the efficiency of the device.