一种催化固体基质室温磷光法测定奋乃静

建立了罗丹明6G（Rhodamene.6G,Rhod 6G＋）电子效应催化固体基质室温磷光法（SS-RTP）测定痕量奋乃静（Perphenazine,PPH）的新方法.方法的线性范围为0.080~28×10-9g/L,线性相关系数为0.999 l,相对标准偏差为1.5%~3.1%,检出限为4.8×10-14g/L.方法应用于血样、脉样中残留奋乃静含量的测定,结果令人满意.

Enhancement of Photophosphorylation and Photosynthesis in Rice by Low Concentrations of NaHSO_3 Under Field Conditions

Spraying 1-2 mmol/L solution of NaHSO 3 on rice ( Oryza sativa L.) leaves resulted in the enhancement of net photosynthetic rate for more than three days. It was also observed that NaHSO 3 application caused increases both in ATP content in leaves and the millisecond_delayed light emission of leaves. The increase in net photosynthetic rate caused by NaHSO 3 treatment was similar to that by PMS (phenazine methosulfate) treatment. The grain yield of treated rice was enhanced approximately by 10% after duplicated application of NaHSO 3 in milk_ripening stage. It is suggested that the enhancement of photosynthesis by NaHSO 3 treatment resulted from the effect of increasing ATP supplement. Concomitant with an increase in the photosynthetic rate and ATP content in leaves, the transient increase in chlorophyll fluorescence after the termination of actinic light, which could be used as an index of the cyclic electron flow, was also enhanced by low concentration of NaHSO 3 treatment. Basing on these results it is proposed that the increase in rice photosynthesis caused by low concentrations of NaHSO 3 could be due to the stimulation of the cyclic electron flow around PSⅠ which in turn the enhancement of the coupled photophosphorylation and photosynthesis.

A 1.25Gb/s InP-Based Vertical Monolithic Integration of an MQW Laser Diode and an HBT Driver witha Lateral Buffer Mes a Structure

A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.

Influence of Disassociation Probability on External Quantum Efficiency in Organic Electrophosphorescent Devices

An analytical model is presented to calculate the disassociation probability and the external quantum efficiency at high field in doped organic electrophosphorescence(EPH) devices. The charge recombination process and the triplet(T)-triplet(T) annihilation processes are taken into account in this model. The influences of applied voltage and the thickness of the device on the disassociation probability, and of current density and the thickness of the device on the external quantum efficiency are studied thoroughly by including and ignoring the disassociation of excitons. It is found that the dissociation probability of excitons will come close to 1 at high electric field, and the external EPH quantum efficiency is almost the same at low electric field. There is a large discrepancy of the external EPH quantum efficiency at high electric field for including or ignoring the disassociation of excitons.

Assessment of nanocomposite photonic systems with the X-ray photoelectron spectroscopy

The chemical compositions of Ag-Er co-doped phosphate and silicate glasses were investigated with X-ray photoelectron spectroscopy with the purpose to identify the chemical state of silver. The analysis of the Ag 3d core lines show the presence of nanometer-sized silver particles in each of the annealed samples,even if these Ag 3d lines appear to be very different from each other. We explain these results as a different interaction of silver with the two glasses matrix,which leads to a different nucleation rate of the Ag clusters.

Electro-optic Sampling of Proton-bombarded GaP Crystal

An electro-optic sampling system utilizing proton-bombarded GaP crystal as probe material has been built. Microwave signals propagating on the indium -tin oxide coplanar waveguide were measured by the system. Measurements of bombarded sample gave the resistance value of four orders greater than that of un- bombarded. The electric field shield effect induced by doped GaP was effectively decreased to approximate semi-insulator material. The system has the voltage sensitivity of about 40 mV/21/Hz with the microwave frequency of 1.15 GHz.

Low-Temperature Plasma Induced Grafting of 2-Methacryloyloxyethyl Phosphorylcholine onto Poly(tetrafluoroethylene) Films

Modification of poly(tetrafluoroethylene)(PTFE) films with 2-methacryloyloxyethyl phosphorylcholine(MPC) was performed by low-temperature plasma treatment and grafting polymerization.Surface properties of PTFE were characterized by attenuated total reflectance Fourier transform infrared(ATR-FTIR) spectra,X-ray photoelectron spectroscopy(XPS) ,and static contact angle.The results show that MPC has been grafted onto PTFE film surface successfully.Contact angle for the modified PTFE films in the water decreased from 108°to 58.25°,while surface energy increased from 17.52 mN/m to 45.47 mN/m.The effects of plasma treatment time,monomer concentration and grafting time on degree of grafting were determined.In the meanwhile,blood compatibility of the PTFE films was studied by checking thrombogenic time of blood plasma.

Mn-doped ZnS quantum dots/methyl violet nanohybrids for room temperature phosphorescence sensing of DNA

Mn-doped ZnS quantum dots/methyl violet nanohybrids were explored to develop a novel room temperature phosphorescence (RTP) sensor for the detection of DNA. Methyl violet (MV) as the electron acceptors was adsorbed on the surface of the quantum dots (QDs) to quench the RTP of the Mn-doped ZnS QDs through an electron-transfer process under excitation. The addition of DNA recovered the RTP signal of the Mn-doped ZnS QDs due to the binding of MV with DNA and the removal of MV from the surface of the Mn-doped ZnS QDs. Under the optimal conditions, the enhanced RTP intensity of the Mn-doped ZnS QDs/MV nanohybrids linearly increased with the concentration of DNA from 0.08 to 12 mg L-1 with the detection limit of 33.6 μg L-1. The relative standard deviation for eleven replicate detections of the reagent blank was 3.7%. The developed method was applied to the detection of DNA in spiked urine samples with recoveries of 96%-103% without interference from nonspecific fluorescence.

An Improved Study of Electronic Band Structure and Optical Parameters of X-Phosphides (X=B, Al, Ga, In) by Modified Becke-Johnson Potential

We report the electronic band structure and optical parameters of X-Phosphides （X=B, AI, Ga, In） by first-principles technique based on a new approximation known as modified Becke-Johnson （roB J）. This potential is considered more accurate in elaborating excited states properties of insulators and semiconductors as compared to LDA and GGA. The present calculated band gaps values of BP, AlP, GaP, and InP are 1.867 eV, 2.268 eV, 2.090 eV, and 1.377 eV respectively, which are in close agreement to the experimental results. The band gap values trend in this study is as： E9 （mBJ-GGA/LDA） 〉 E9 （GGA） 〉 Eg （LDA）. Optical parametric quantities （dielectric constant, refractive index, reflectivity and optical conductivity） which based on the band structure are aiso presented and discussed. BP, AlP, GaP, and InP have strong absorption in between the energy range 4-9 eV, 4-7 ev, 3-7 eV, and 2-7 eV respectively. Static dielectric constant, static refractive index and coefficient of reflectivity at zero frequency, within mBJ-GGA, are also calculated. BP, AIP, GaP, and InP show significant optical conductivity in the range 5.2-10 eV, 4.3-8 eV, 3.5- 7.2 eV, and 3.2-8 eV respectively. The present study endorses that the said compounds can be used in opto-electronic applications, for different energy ranges.

Green phosphorescent organic light-emitting devices based on different electron transport layers combining with fluorescent sub-monolayer

We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl(CBP) doped with 8% tris(2-phenylpyridine) iridium(Irppy3) for use in efficient green phosphorescent organic light-emitting devices(PHOLEDs) combined with different electron transport layers of Alq and BAlq. The PHOLEDs exhibit maximum current efficiency and power efficiency of 19.8 cd/A and 6.21 lm/W, respectively. The high performance of such PHOLEDs is attributed to the better electron mobile ability of BAlq and sub-monolayer quinacridone(QAD) as carrier trapping layer and equal charge carrier mobilities of hole and electron to form the broad carrier recombination zone in the emitting layer, which can 1reduce the triplet-triplet annihilation and improve the efficiency of the device.