The fabrication and characterization of a laser ionization source for ion mobility spectrometer （IMS） is described with the calculated parameter of the drift tube. Ions are created in air at ambient pressure using l...The fabrication and characterization of a laser ionization source for ion mobility spectrometer （IMS） is described with the calculated parameter of the drift tube. Ions are created in air at ambient pressure using laser ionization （ A = 248 nm） with air as the drift gas. Mobility spectra for positive ions at different electric fields are obtained with the length of drift tube of 25 and 50 mm, respectively. The distribution of the electric field in the drift tube （50 mm） has also been investigated by SIMION simulation with the ion shutter closed and open respectively.展开更多
This work is about the development of a super low noise amplifier with minimum power consumption and high gain for several wireless applications.The amplifier operates at frequency bands of 0.9-2.4 GHz and can be used...This work is about the development of a super low noise amplifier with minimum power consumption and high gain for several wireless applications.The amplifier operates at frequency bands of 0.9-2.4 GHz and can be used in many applications like Wireless local area network(WLAN),WiFi,Bluetooth,ZigBee and Global System for mobile communications(GSM).This new design can be employed for the IEEE 802.15.4 standard in industrial,scientific and medical(ISM) Band.The enhancement mode pseudomorphic high electron mobility transistor PHEMT is used here due to its high linearity,better performance and less noisy operation.The common source inductive degeneration method is employed here to enhance the gain of amplifier.The amplifier produces a gain of more than 17 dB and noise figure of about 0.5 dB.The lower values of S11 and S22 reflect the accuracy of impedance matching network placed at the input and output sides of amplifier.Agilent Advance Design System(ADS) is used for the design and simulation purpose.Further the layout of design is developed on the FR4 substrate.展开更多
A Monolithic integrated phase locked-loop （PLL） with a low phase noise is proposed in this paper. Several techniques are utilized to improve the performance of the PLL which works at the milli- meter-wave band. The ...A Monolithic integrated phase locked-loop （PLL） with a low phase noise is proposed in this paper. Several techniques are utilized to improve the performance of the PLL which works at the milli- meter-wave band. The on-chip high-Q eoplanar waveguides （CPWs） are utilized in the resonant tank and the differential current amplifier with a resonator is used to realize the VCO. In the output buffer circuit, several stages of cascaded source-followers connect and differential amplifiers are adopted to improve the driving capability of the PLL＇ s output signals. An improved analog multiplier topology is also used in the PD circuit to improve the gain of the PD. The proposed PLL is realized with a 0.2p, m GaAs pseudomorphie high electron mobility transistor （PHEMT） process. At 10 kHz offset from the center frequency, the measured output phase noise of the PLL output is only -88.83dBc/Hz. The circuit exhibits a low root mean sauare （RMS） litter of 1.68Ds.展开更多
文摘The fabrication and characterization of a laser ionization source for ion mobility spectrometer （IMS） is described with the calculated parameter of the drift tube. Ions are created in air at ambient pressure using laser ionization （ A = 248 nm） with air as the drift gas. Mobility spectra for positive ions at different electric fields are obtained with the length of drift tube of 25 and 50 mm, respectively. The distribution of the electric field in the drift tube （50 mm） has also been investigated by SIMION simulation with the ion shutter closed and open respectively.
基金supported by the National Natural Science Foundation of China(Grant no. 61202399,61571063)
文摘This work is about the development of a super low noise amplifier with minimum power consumption and high gain for several wireless applications.The amplifier operates at frequency bands of 0.9-2.4 GHz and can be used in many applications like Wireless local area network(WLAN),WiFi,Bluetooth,ZigBee and Global System for mobile communications(GSM).This new design can be employed for the IEEE 802.15.4 standard in industrial,scientific and medical(ISM) Band.The enhancement mode pseudomorphic high electron mobility transistor PHEMT is used here due to its high linearity,better performance and less noisy operation.The common source inductive degeneration method is employed here to enhance the gain of amplifier.The amplifier produces a gain of more than 17 dB and noise figure of about 0.5 dB.The lower values of S11 and S22 reflect the accuracy of impedance matching network placed at the input and output sides of amplifier.Agilent Advance Design System(ADS) is used for the design and simulation purpose.Further the layout of design is developed on the FR4 substrate.
基金Supported by the National Natural Science Foundation of China （No. 61106024, 60901012, 60976029） , the National High Technology Research and Development Program of China （No. 2011AA010301 ）, and the Science and Technology Program of Southeast University （No. K J2010402 ）.
文摘A Monolithic integrated phase locked-loop （PLL） with a low phase noise is proposed in this paper. Several techniques are utilized to improve the performance of the PLL which works at the milli- meter-wave band. The on-chip high-Q eoplanar waveguides （CPWs） are utilized in the resonant tank and the differential current amplifier with a resonator is used to realize the VCO. In the output buffer circuit, several stages of cascaded source-followers connect and differential amplifiers are adopted to improve the driving capability of the PLL＇ s output signals. An improved analog multiplier topology is also used in the PD circuit to improve the gain of the PD. The proposed PLL is realized with a 0.2p, m GaAs pseudomorphie high electron mobility transistor （PHEMT） process. At 10 kHz offset from the center frequency, the measured output phase noise of the PLL output is only -88.83dBc/Hz. The circuit exhibits a low root mean sauare （RMS） litter of 1.68Ds.
