The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be disti...The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current （operating current density） and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance.展开更多
An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity cur...An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency (fT) of 22 GHz and a maximum oscillation frequency (fmax) of 65 GHz. The GaN HEMT device with a gate width of 1 mm exhibited a continuous-wave saturated output power of 10.2 W and a linear gain of 14.8 dB at 8 GHz, and successfully achieved the power-added efficiency (PAE) as high as 69.2%, which is very suitable for X-band power applications.展开更多
文摘The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current （operating current density） and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance.
基金supported by the Knowledge Innovation Program of Chinese Academy of Sciences
文摘An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency (fT) of 22 GHz and a maximum oscillation frequency (fmax) of 65 GHz. The GaN HEMT device with a gate width of 1 mm exhibited a continuous-wave saturated output power of 10.2 W and a linear gain of 14.8 dB at 8 GHz, and successfully achieved the power-added efficiency (PAE) as high as 69.2%, which is very suitable for X-band power applications.
