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真空分层蒸镀InSb薄膜的研究 被引量:1
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作者 于映 陈抗生 《真空电子技术》 北大核心 1995年第4期33-35,20,共4页
采用双源分层蒸镀的方法制作InSb薄膜,将区域熔融技术用于InSb薄膜的热处理,提高了薄膜的纯度和择优定向程度,室温下电子迁移率达到30000cm2/(V·s)。在此基础上,分析了影响InSb薄膜性能的几个主要因素。
关键词 薄膜 分层蒸镀 电子迁 锑化铟
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14W X-Band AlGaN/GaN HEMT Power MMICs 被引量:5
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作者 陈堂胜 张斌 +3 位作者 任春江 焦刚 郑维彬 陈辰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1027-1030,共4页
The development of an AIGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is pres- ented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AIGaN/G... The development of an AIGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is pres- ented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AIGaN/GaN HEMTs. S-parameter measurements show that the frequency performance of the AIGaN/GaN HEMTs depends significantly on the operating voltage. Higher operating voltage is a key to higher power gain for the AIGaN/GaN HEMTs. The developed 2-stage power MMIC delivers an output power of more than 10W with over 12dB power gain across the band of 9-11GHz at a drain bias of 30V. Peak output power inside the band reaches 14.7W with a power gain of 13.7dB and a PAE of 23%. The MMIC chip size is only 2.0mm × 1. 1mm. This work shows superiority over previously reported X-band AIGaN/GaN HEMT power MMICs in output power per millimeter gate width and output power per unit chip size. 展开更多
关键词 X-BAND AIGAN/GAN HEMTS power MMIC
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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 被引量:3
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作者 王晓亮 胡国新 +9 位作者 马志勇 肖红领 王翠梅 罗卫军 刘新宇 陈晓娟 李建平 李晋闽 钱鹤 王占国 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第9期1521-1525,共5页
AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT st... AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm^2/(V·s) at room temperature and 11588cm^2/(V ·s) at 80K with almost equal 2DEG concentrations of about 1.03 × 10^13 cm^-2. High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0.27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained. 展开更多
关键词 A GaN/GaN HEMT MOCVD power device SiC substrates
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X-Band GaN Power HEMTs with Power Density of 2.23 W/mm Grown on Sapphire by MOCVD 被引量:3
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作者 王晓亮 刘新宇 +9 位作者 胡国新 王军喜 马志勇 王翠梅 李建平 冉军学 郑英奎 钱鹤 曾一平 李晋闽 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第10期1865-1870,共6页
The growth, fabrication, and characterization of 0. 2μm gate-length AlGaN/GaN HEMTs, with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described. The unintentionally ... The growth, fabrication, and characterization of 0. 2μm gate-length AlGaN/GaN HEMTs, with a high mobility GaN thin layer as a channel,grown on (0001) sapphire substrates by MOCVD,are described. The unintentionally doped 2.5μm thick GaN epilayers grown with the same conditions as the GaN channel have a room temperature electron mobility of 741cmz^2(V· s) at an electron concentration of 1.52 × 10^16 cm^-3. The resistivity of the thick GaN buffer layer is greater than 10^8Ω· cm at room temperature. The 50mm HEMT wafers grown on sapphire substrates show an average sheet resistance of 440.9Ω□ with uniformity better than 96%. Devices of 0.2μm× 40μm gate periphery exhibit a maximum extrinsic transconductance of 250mS/mm and a current gain cutoff frequency of 77GHz. The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz. The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V. 展开更多
关键词 ALGAN/GAN HEMT MOCVD power device
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A Radial Stub Test Circuit for Microwave Power Devices 被引量:2
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作者 罗卫军 陈晓娟 +3 位作者 梁晓新 马晓琳 刘新宇 王晓亮 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第9期1557-1561,共5页
With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a paramet... With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal,the maximum gain is 8.75dB,and the maximum output power is 33.2dBm. 展开更多
关键词 radial stub test circuit GAN HEMT
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Lattice-Matched InP-Based HEMTs with T^T of 120GHz 被引量:2
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作者 陈立强 张海英 +2 位作者 尹军舰 钱鹤 牛洁斌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第3期472-475,共4页
Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 ... Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm. 展开更多
关键词 cutoff frequency high electron mobility transistors INALAS/INGAAS INP
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An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate 被引量:1
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作者 王冲 张金凤 +3 位作者 全思 郝跃 张进城 马晓华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1682-1685,共4页
Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1.2μm gate-length,4mm space between source and drain,and 1... Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1.2μm gate-length,4mm space between source and drain,and 15nm recessed-gate depth exhibit a maximum drain current of 332mA/mm at 3V, a maximum transconductance of 221mS/mm, a threshold voltage of 0.57V, ft of 5.2GHz, and fmax of 9.3GHz. A dielectric layer formed unintentionally during recessedgate etching is confirmed by contrasting the Schottky I-V characteristics of pre-etching and post-etching. The frequency characteristics and subthreshold characteristics of the devices are studied in detail. 展开更多
关键词 high electron mobility transistors AlGaN/GaN recessed-gate threshold voltage
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RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content 被引量:1
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作者 王晓亮 王翠梅 +7 位作者 胡国新 王军喜 刘新宇 刘键 冉军学 钱鹤 曾一平 李晋闽 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第6期1116-1120,共5页
A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the tr... A Si doped AlGaN/GaN HEMT structure with high Al content (x=43%) in the barrier layer is grown on sapphire substrate by RF-MBE.The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement,respectively.The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.The high 2DEG mobility in excess of 1260cm2/(V·s) is achieved with an electron density of 1.429×10 13cm -2 at 297K,corresponding to a sheet-density-mobility product of 1.8×10 16V -1·s -1.Devices based on the structure are fabricated and characterized.Better DC characteristics,maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer.The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance. 展开更多
关键词 HEMT GAN 2DEG RF-MBE power device
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Ultrahigh-Speed Lattice-Matched In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As HEMTs with 218GHz Cutoff Frequency 被引量:1
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作者 刘亮 张海英 +5 位作者 尹军舰 李潇 徐静波 宋雨竹 牛洁斌 刘训春 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第12期1864-1867,共4页
Lattice-matched In0.5 Ga0.47 As/In0.52 Al 0.48 As high electron mobility transistors (HEMTs) with a cutoff frequency (ft) as high as 218GHz are reported. This fT is the highest value ever reported for HEMTs in Chi... Lattice-matched In0.5 Ga0.47 As/In0.52 Al 0.48 As high electron mobility transistors (HEMTs) with a cutoff frequency (ft) as high as 218GHz are reported. This fT is the highest value ever reported for HEMTs in China. These devices also demonstrate excellent DC characteristics:the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm. The material structure and all the device fabrication technology in this work were developed by our group. 展开更多
关键词 cutoff frequency high electron mobility transistor lnGaAs/InA1As lnP
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In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As HEMTs with f_(max) of 183GHz 被引量:1
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作者 刘亮 张海英 +7 位作者 尹军舰 李潇 杨浩 徐静波 宋雨竹 张健 牛洁斌 刘训春 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第12期1860-1863,共4页
By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fab-... By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47 As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fab- ricated. The fmax is the highest value for HEMTs in China. Also, the devices are reported, including the device structure, the fabrication process, and the DC and RF performances. 展开更多
关键词 maximum oscillation frequency/power-gain cutoff frequency high electron mobility transistor InGaAs/InAIAs INP
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A New Method for InGaAs/InP Composite Channel HEMTs Simulation
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作者 刘亮 张海英 +4 位作者 尹军舰 李潇 徐静波 宋雨竹 刘训春 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第11期1706-1711,共6页
A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors (HEMTs). By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the c... A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors (HEMTs). By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the channel in different electric fields is obtained. This method is faster and more robust than traditional meth- ods and should be applicable to other types of HEMTs simulations. A detailed study of the InGaAs/InP composite channel HEMTs is presented with the help of simulations. 展开更多
关键词 InP INGAAS composite channel HEMTS SIMULATION
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Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy
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作者 王晓亮 胡国新 +9 位作者 王军喜 刘新宇 刘键 刘宏新 孙殿照 曾一平 钱鹤 李晋闽 孔梅影 林兰英 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第2期121-125,共5页
AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035... AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized.The HEMT materials have a mobility of 1035cm2/(V·s) at sheet electron concentration of 1.0×10 13cm -2at room temperature.For the devices fabricated using the materials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic transconductance of 186mS/mm are obtained on devices with gate length and width of 1μm and 80μm respectively.The f t,unit-current-gain frequency of the devices,is about 18.8GHz. 展开更多
关键词 HEMT GAN FET RF-MBE
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MBE Growth of High Electron Mobility InP Epilayers
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作者 舒永春 姚江宏 +5 位作者 林耀望 邢小东 皮彪 徐波 王占国 许京军 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第8期1485-1488,共4页
The molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0-7.0) and growth rate (0.437 and 0. 791μm/h). ... The molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0-7.0) and growth rate (0.437 and 0. 791μm/h). Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/(V · s) and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃. 展开更多
关键词 SSMBE high electron mobility InP epilayers
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Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT
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作者 薛丽君 夏洋 +6 位作者 刘明 王燕 邵雪 鲁净 马杰 谢常青 余志平 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第2期298-303,共6页
AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic (HD) systems. The influences of polarization charge and quantum effects are considered i... AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic (HD) systems. The influences of polarization charge and quantum effects are considered in this model. Then the two-dimensional conduction band and electron distribution, electron temperature characteristics, Id versus Vd and Id versus Vg, transfer characteristics and transconductance curves are obtained. Corresponding analysis and discussion based on the simulation results are subsequently given. 展开更多
关键词 AIGaN/GaN HEMT 2D modeling and simulation polarization charges quantum effects
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Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal
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作者 窦庆萍 陈占国 +3 位作者 贾刚 马海涛 曹昆 张铁臣 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第4期609-612,共4页
The current-voltage(I-V) characteristics of cBN crystal sandwiched between two metallic electrodes are measured and found to be nonlinear. Over 20 samples are measured at room temperature with various electrodes, an... The current-voltage(I-V) characteristics of cBN crystal sandwiched between two metallic electrodes are measured and found to be nonlinear. Over 20 samples are measured at room temperature with various electrodes, and the resulting curves are all similar in shape. When a voltage of about 560V is applied to the cBN crystal, the emitted light is visible to the naked eye in a dark room. We explain these phenomena by the space charge limited current and the electronic transition between the X and Г valleys of the conduction band. 展开更多
关键词 n-cBN crystal nonlinear I-V characteristics space charge limited current electronic transition in two valleys
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Electron Attachment Studies for CHCl3 Using Ion Mobility Spectrometry
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作者 韩海燕 冯鸿涛 +3 位作者 李虎 王鸿梅 江海河 储焰南 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2011年第2期218-224,I0004,共8页
The dissociative electron attachment process for CHCl3 at different electric field have been studied with nitrogen as drift and carrier gas using corona discharge ionization source ion mobility spectrometry (CD-IMS)... The dissociative electron attachment process for CHCl3 at different electric field have been studied with nitrogen as drift and carrier gas using corona discharge ionization source ion mobility spectrometry (CD-IMS). The corresponding electron attachment rate constants varied from 1.26×10-8 cm3/(molecules s) to 8.24×10-9 cm3/(molecules s) as the electric field changed from 200 V/cm to 500 V/cm. At a fixed electric field in the drift region, the attachment rate constants are also detected at different sample concentration. The ionmolecule reaction rate constants for the further reaction between Cl^- and CHCl3 are also detected, which indicates that the technique maybe becomes a new method to research the rate constants between ions and neural molecules. And the reaction rate constants between Cl- and CHCl3 are the first time detected using CD-IMS. 展开更多
关键词 Ion mobility spectrometry Dissociative electron attachment Ion-molecule reaction rate constant CHLOROFORM
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Monolithic Integration of InGaP/AlGaAs/InGaAs Enhancement/Depletion-Mode PHEMTs 被引量:1
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作者 李海鸥 张海英 +1 位作者 尹军舰 叶甜春 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第12期2281-2285,共5页
The monolithic integration of enhancement- and depletion-mode (E/D-mode) InGaP/AIGaAs/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) with a 1.0μm gate length is presented. Epilayers are grown on... The monolithic integration of enhancement- and depletion-mode (E/D-mode) InGaP/AIGaAs/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) with a 1.0μm gate length is presented. Epilayers are grown on SI GaAs substrates using MBE. For this structure, a mobility of 5410cm^2/(V · s) and a sheet density of 1.34 × 10^12 cm^-2 are achieved at room temperature. During the gate fabrication of E/D-mode PHEMTs,a novel twostep technology is applied. The devices with a gate dimension of 1μm × 100μm exhibit good DC and RF performances. Threshold voltages of 0. 2 and -0. 4V,maximum drain current densities of 300 and 340mA/mm,and extrinsic transconductances of 350 and 300mS/mm for E- and D-mode PHEMTs are obtained, respectively. The reverse gatedrain breakdown voltage is -14V for both E- and D-mode. Current-gain cutoff frequencies of 10. 3 and 12.4GHz and power-gain cutoff frequencies of 12.8 and 14.7GHz for E- and D-mode are reported, respectively. 展开更多
关键词 pseudomorphic high electron mobility transistors ENHANCEMENT-MODE DEPLETION-MODE threshold voltage GAAS
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An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs 被引量:1
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作者 李小健 谭耀华 田立林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期863-868,共6页
An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is sui... An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is suitable for (100〉/ 〈110) channel nMOSFETs under biaxial or (100〉/〈 110 ) uniaxial stress and can be implemented in conventional device simulation tools . 展开更多
关键词 STRAINED-SI electron mobility analytical model NMOSFET uniaxial stress/strain
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Static Characteristics of AlGaN/GaN High Electron Mobility Transistors with Different Thickness of AlGaN Layer
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作者 吴桐 郝智彪 +4 位作者 唐广 郭文平 胡卉 孙长征 罗毅 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第11期1130-1134,共5页
The growth and device fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) are carried out by using metal organic vapor phase epitaxy (MOVPE) system.Specially the performances of HEMT devices with diff... The growth and device fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) are carried out by using metal organic vapor phase epitaxy (MOVPE) system.Specially the performances of HEMT devices with different thickness of AlGaN layer are compared.The device with thinner spacer layer exhibits better static performance.And a maximum saturation current density of 650mA/mm and a peak extrinsic transconductance of 100mS/mm are obtained from the devices with gate length of 1μm. 展开更多
关键词 HEMT GAN power devices
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Device Characteristics Comparison Between GaAs Single and Double Delta-Doped Pseudomorphic High Electron Mobility Transistors
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作者 陈震 郑英奎 +2 位作者 刘新宇 和致经 吴德馨 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第3期247-251,共5页
The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double del... The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double delta doped design,the DH-PHEMT can enhance the carrier confinement,increase the electron gas density,and improve the electron gas distribution,which is beneficial to the device performance.A high device linearity,high transconductance over a large gate voltage swing,high current drivability are found in DH-PHEMT.These improvements suggest that DH-PHEMT is more suitable for high linearity applications in microwave power device. 展开更多
关键词 pseudomorphic high electron mobility transistor(PHEMT) delta dope LINEARITY
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