Molybdenum ditelluride （MoTe2） has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taki...Molybdenum ditelluride （MoTe2） has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taking advantage of high-κ screening effect, we have fabricated back-gated MoTe2 transistors on an Al2O3 high-κ dielectric and systematically investigated the electronic and optoelectronic proper- ties. A high current on/off ratio exceeding 106 is achieved in the Al2O3-based MoTe2 transistors, and the hole mobility is demonstrated to be 150 cm2 V^-1 s^-1, compared to 0.2-20 cm^2 V^-1 s^-1 ever obtained from back-gated MoTe2 transistors in the literatures. Moreover, a considerable hole concentration of 1.2 × 10^13 cm 2 is attained in our Al2O3-based MoTe2 transistors owing to the strong gate control capa- bility, leading to a high on-state hole current of 6.1 μA μm^-1. After optimization, our Al2O3-based MoTe2 phototransistor exhibits outstanding photodetective performance, with a high responsivity of 543 AW^-1 and a high photogain of 1,662 at 405 nm light illumination, which are boosted around 419 times compared to the referential SiO2-based control devices. The mechanisms of photoconductivity in the Al2O3-based MoTe2 phototransistors have been analyzed in detail, and the photogating effect is considered to play an important role. This work may provide useful insight to improve carrier mobility in two-dimensional layered semiconductors and open opportunities to facilitate the development of high-performance photodetectors in the future.展开更多
In this paper,a 3D upstream finite element method is developed to analyze the ionized electric field around the UHVDC transmission lines including the building near it.The ionized electric field around the building is...In this paper,a 3D upstream finite element method is developed to analyze the ionized electric field around the UHVDC transmission lines including the building near it.The ionized electric field around the building is reduced due to the shielding effect of the building and the shielding distance is about three times its height.The ionized electric field including the human body model on the building and away from the building is also taken into account.The ionized electric field distortion ratio of the human body model is discussed in this paper.The distortion ratios for the positions on the building are less than those on the ground.展开更多
基金supported by the National Key Research and Development Program of China(2016YFA0302300,016YFA0200400)the National Science and Technology Major Project of China(2016ZX02301001)+1 种基金the National Natural Science Foundation of China(61306105)the Tsinghua University Initiative Scientific Research Program
文摘Molybdenum ditelluride （MoTe2） has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taking advantage of high-κ screening effect, we have fabricated back-gated MoTe2 transistors on an Al2O3 high-κ dielectric and systematically investigated the electronic and optoelectronic proper- ties. A high current on/off ratio exceeding 106 is achieved in the Al2O3-based MoTe2 transistors, and the hole mobility is demonstrated to be 150 cm2 V^-1 s^-1, compared to 0.2-20 cm^2 V^-1 s^-1 ever obtained from back-gated MoTe2 transistors in the literatures. Moreover, a considerable hole concentration of 1.2 × 10^13 cm 2 is attained in our Al2O3-based MoTe2 transistors owing to the strong gate control capa- bility, leading to a high on-state hole current of 6.1 μA μm^-1. After optimization, our Al2O3-based MoTe2 phototransistor exhibits outstanding photodetective performance, with a high responsivity of 543 AW^-1 and a high photogain of 1,662 at 405 nm light illumination, which are boosted around 419 times compared to the referential SiO2-based control devices. The mechanisms of photoconductivity in the Al2O3-based MoTe2 phototransistors have been analyzed in detail, and the photogating effect is considered to play an important role. This work may provide useful insight to improve carrier mobility in two-dimensional layered semiconductors and open opportunities to facilitate the development of high-performance photodetectors in the future.
基金supported by the Key Project of the National Natural Science Foundation of China(Grant No.51037001)the National Basic Research Program of China("973"Program)(Grant No.2011CB209401)
文摘In this paper,a 3D upstream finite element method is developed to analyze the ionized electric field around the UHVDC transmission lines including the building near it.The ionized electric field around the building is reduced due to the shielding effect of the building and the shielding distance is about three times its height.The ionized electric field including the human body model on the building and away from the building is also taken into account.The ionized electric field distortion ratio of the human body model is discussed in this paper.The distortion ratios for the positions on the building are less than those on the ground.
