The low resistance PTC ceramic thermistor material with excellent eleectricalproperties are successfully fabricated by raw materials at industrial range made in our country onthe study of its composition expression an...The low resistance PTC ceramic thermistor material with excellent eleectricalproperties are successfully fabricated by raw materials at industrial range made in our country onthe study of its composition expression and fabrication process by using the addition of Nb, La, Y,Ta , microstructure regulator BN and ASTL phase . The composition and its fabrication method arestudied. The relation of electrical properties of the PTC ceramic material to its compositionexpression and its related electrical properties are discussed展开更多
In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO varis- tors, ZnO-Bi2O3 based varistor ceramic samples were sintered at 1000, 1100, 1200 and 1300℃,...In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO varis- tors, ZnO-Bi2O3 based varistor ceramic samples were sintered at 1000, 1100, 1200 and 1300℃, respectively. The measured results indicate that the sample sintered at 1300℃ possesses the lowest voltage gradient and nonlinear coefficient, compared with other samples. The barrier height of the samples decreased as the sintering temperature increased, which resulted in the deterioration of nonlinearity. Furthermore, two bulk electron traps determined by admittance spectroscopy were generally independent of sintering temperature, which indicated that these two traps might originate from the intrinsic defects in ZnO lattice.展开更多
文摘The low resistance PTC ceramic thermistor material with excellent eleectricalproperties are successfully fabricated by raw materials at industrial range made in our country onthe study of its composition expression and fabrication process by using the addition of Nb, La, Y,Ta , microstructure regulator BN and ASTL phase . The composition and its fabrication method arestudied. The relation of electrical properties of the PTC ceramic material to its compositionexpression and its related electrical properties are discussed
基金supported by the National Natural Science Foundations of China(Grant Nos.50425721 and 50737001)
文摘In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO varis- tors, ZnO-Bi2O3 based varistor ceramic samples were sintered at 1000, 1100, 1200 and 1300℃, respectively. The measured results indicate that the sample sintered at 1300℃ possesses the lowest voltage gradient and nonlinear coefficient, compared with other samples. The barrier height of the samples decreased as the sintering temperature increased, which resulted in the deterioration of nonlinearity. Furthermore, two bulk electron traps determined by admittance spectroscopy were generally independent of sintering temperature, which indicated that these two traps might originate from the intrinsic defects in ZnO lattice.
