Transparent metal oxide nanowires （NWs） have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a...Transparent metal oxide nanowires （NWs） have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a facile chemical vapor deposition （CVD） method. Their structural features and growth mechanism are demonstrated in detail by using the ladder-like In2O3 NWs as an example. Single ladder-like NW-based field-effect transistors （FETs） and photodetectors （PDs） of SnO2 were fabricated in order to investigate their electrical transport and light absorption properties. Compared with straight NW-based FETs which operate in an enhancement mode （E-mode）, FETs build on ladder-like NWs operate in a depletion mode （D-mode）. The ladder-like NWs also give higher carrier concentrations than conventional single nanowires. Finite-difference time-domain （FDTD） simulations have been performed on the ladder-like NWs and the results reveal a great enhancement of light absorption with both transverse-electric （TE） and transverse-magnetic （TM） polarization modes, which is in good agreement with the experimental results.展开更多
基金This work was supported by the National Natural Science Foundation of China （Nos. 61377033 and 91123008）, the 973 Program of China （No. 2011CB933300）, and the Program for New Century Excellent Talents of the University in China （Grant No. NCET-11-0179）.
文摘Transparent metal oxide nanowires （NWs） have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a facile chemical vapor deposition （CVD） method. Their structural features and growth mechanism are demonstrated in detail by using the ladder-like In2O3 NWs as an example. Single ladder-like NW-based field-effect transistors （FETs） and photodetectors （PDs） of SnO2 were fabricated in order to investigate their electrical transport and light absorption properties. Compared with straight NW-based FETs which operate in an enhancement mode （E-mode）, FETs build on ladder-like NWs operate in a depletion mode （D-mode）. The ladder-like NWs also give higher carrier concentrations than conventional single nanowires. Finite-difference time-domain （FDTD） simulations have been performed on the ladder-like NWs and the results reveal a great enhancement of light absorption with both transverse-electric （TE） and transverse-magnetic （TM） polarization modes, which is in good agreement with the experimental results.
