A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface pote...A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SO1 MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 10^10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process.展开更多
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and ...Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.展开更多
文摘A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SO1 MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 10^10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process.
文摘Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.
