为了提高压电传感器测量系统的集成度,采用1μm高压双极—互补金属氧化物半导体—双重扩散金属氧化物半导体(BCD)工艺,设计了一种适用于压电传感器的信号调理及输出芯片。集成了电压放大型阻抗变换电路、可调增益放大电路、二线制电流...为了提高压电传感器测量系统的集成度,采用1μm高压双极—互补金属氧化物半导体—双重扩散金属氧化物半导体(BCD)工艺,设计了一种适用于压电传感器的信号调理及输出芯片。集成了电压放大型阻抗变换电路、可调增益放大电路、二线制电流输出电路。仿真结果表明:芯片具有输入阻抗高,单位增益带宽大,总增益可调范围广等特点,在12~24 V宽供电范围下可正常工作,耗电仅为3.1 m A。展开更多
A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED wit...A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED with SiO2 /ITO/Al reflective CBL deposited on naturally textured p-InGaN/p-GaN surface exhibited a light output power that was 7.6% and 18.5% higher than those of the textured LEDs with SiO2 CBL and without SiO2 CBL, respectively. The LED with backside hybrid reflector exhibited a light output power that was 30% higher than that of LED without the hybrid reflector. The enhancement in light output power is attributed to the improved current spreading performance via the SiO2 CBL, the Al omnidirectional metal reflector to prevent the light absorption by the opaque p-electrode pad, and the backside hybrid reflector to extract bottom-emitting light.展开更多
文摘为了提高压电传感器测量系统的集成度,采用1μm高压双极—互补金属氧化物半导体—双重扩散金属氧化物半导体(BCD)工艺,设计了一种适用于压电传感器的信号调理及输出芯片。集成了电压放大型阻抗变换电路、可调增益放大电路、二线制电流输出电路。仿真结果表明:芯片具有输入阻抗高,单位增益带宽大,总增益可调范围广等特点,在12~24 V宽供电范围下可正常工作,耗电仅为3.1 m A。
基金supported by the Postdoctoral Science Foundation of Shanghai (Grant No. 12R21413900)the National Basic Research Project of China ("973" Project) (Grant No. 2011CB013103)
文摘A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED with SiO2 /ITO/Al reflective CBL deposited on naturally textured p-InGaN/p-GaN surface exhibited a light output power that was 7.6% and 18.5% higher than those of the textured LEDs with SiO2 CBL and without SiO2 CBL, respectively. The LED with backside hybrid reflector exhibited a light output power that was 30% higher than that of LED without the hybrid reflector. The enhancement in light output power is attributed to the improved current spreading performance via the SiO2 CBL, the Al omnidirectional metal reflector to prevent the light absorption by the opaque p-electrode pad, and the backside hybrid reflector to extract bottom-emitting light.
