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δ-掺杂Be受主GaAs/AlAs多量子阱的空穴共振隧穿(英文) 被引量:1
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作者 郑卫民 黄海北 +4 位作者 李素梅 丛伟艳 王爱芳 李斌 宋迎新 《发光学报》 EI CAS CSCD 北大核心 2019年第11期1373-1379,共7页
三个具有不同量子阱宽度的GaAs/AlAs多量子阱结构样品通过分子束外延生长设备生长在半绝缘的(100)p-型GaAs衬底上,并且在量子阱层结构的生长过程中,在GaAs阱层中央进行了Be受主的δ-掺杂。基于这3个结构样品,通过光刻技术和半导体加工... 三个具有不同量子阱宽度的GaAs/AlAs多量子阱结构样品通过分子束外延生长设备生长在半绝缘的(100)p-型GaAs衬底上,并且在量子阱层结构的生长过程中,在GaAs阱层中央进行了Be受主的δ-掺杂。基于这3个结构样品,通过光刻技术和半导体加工工艺制备了相应的两端器件。在4~200 K的温度范围内,我们分别测量了器件的电流-电压特征曲线,清楚地观察到了重、轻空穴通过δ-掺杂Be受主GaAs/AlAs多量子阱结构的共振隧穿现象。发现随着GaAs量子阱层宽的逐渐减小,轻空穴的共振隧穿峰向着高电压方向移动,这个结果和通过AlAs/GaAs/AlAs双势垒结构模型计算的结果是一致的。然而,随着测量温度的进一步升高,两个轻空穴共振峰都朝着低电压的方向移动,并且在150 K温度下,其中一个共振遂穿峰表现为一种振动模式。 展开更多
关键词 共振隧穿 重空穴和轻空穴 GaAs/AlAs多量子阱 电流-电压特征 δ-掺杂
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空冷型PEMFC电堆的单电池特性研究 被引量:2
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作者 谭凯峰 陈维荣 +1 位作者 韩明 张雪霞 《电化学》 CAS CSCD 北大核心 2018年第6期766-771,共6页
本文对实验室自制的自增湿空冷型PEMFC电堆进行了自适应特性研究,并分析了各单电池的性能以及各电池的电压分布情况.实验中设定操作条件为:阳极工作压力为2 bar,阴极风扇功率0.3 W,氢气室每隔10 s排水1 s.从实验结果可以看出,空冷型PEMF... 本文对实验室自制的自增湿空冷型PEMFC电堆进行了自适应特性研究,并分析了各单电池的性能以及各电池的电压分布情况.实验中设定操作条件为:阳极工作压力为2 bar,阴极风扇功率0.3 W,氢气室每隔10 s排水1 s.从实验结果可以看出,空冷型PEMFC的电压分布与负载电流的大小具有一定的联系,大电流负载下电池的电压分布会出现明显的不均匀现象,根据分析结果可以看出,电堆的单体电压波动率与负载电流之间存在近似的指数关系分布,且各单片电池间内阻的差异与大电流下过高的电堆温度都会造成电压分布不均匀的现象. 展开更多
关键词 空冷型PEMFC 电流密度-电压特征曲线 电压分布
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正向偏置(p)SiC/(n)GaN异质结构稳态导电特性的模拟
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作者 张锦涛 赵少云 +2 位作者 韦文生 郑君鼎 何明昌 《温州大学学报(自然科学版)》 2019年第4期36-46,共11页
本文利用MATLAB数值模拟了不同晶相(6H、4H、3C)p型掺杂SiC与六方相n型掺杂GaN构成异质结构的正向稳态导电特性.讨论了(p)SiC/(n)GaN异质结构模型,分析了正向偏压、温度对异质结构内载流子分布的影响,考虑了异质结构内载流子复合率随正... 本文利用MATLAB数值模拟了不同晶相(6H、4H、3C)p型掺杂SiC与六方相n型掺杂GaN构成异质结构的正向稳态导电特性.讨论了(p)SiC/(n)GaN异质结构模型,分析了正向偏压、温度对异质结构内载流子分布的影响,考虑了异质结构内载流子复合率随正向偏压的变化,对比了不同温度异质结构的电容-电压特性,探究了异质结构p区及n区不同少子寿命和掺杂浓度、温度等情况下的主要电流成份与正向偏压的关系.模拟数据与文献的实验结果吻合,可指导SiC/GaN异质结构双极晶体管等器件的制造. 展开更多
关键词 (p)SiC/(n)GaN异质结构 载流子传导 电容-电压特征 电流-电压特征 模拟
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太阳能电池板的生产优化
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作者 Alberto Cortes Ricardo Silla 《工业设计》 2009年第10期41-42,共2页
Siliken再生能源公司利用NI的硬件与软件进行标准化生产
关键词 硅提纯 电流-电压特征测试 光波脉冲
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Intrinsic superconducting transport properties of ultra-thin Fe_(1+y)Te_(0:6)Se_(0:4) microbridges
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作者 HanCong Sun YangYang Lv +10 位作者 DaChuan Lu ZhiBao Yang XianJing Zhou LuYao Hao XiangZhuo Xing Wei Zou Jun Li ZhiXiang Shi WeiWei Xu HuaBing Wang PeiHeng Wu 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2017年第11期76-80,共5页
We investigated the superconducting properties of Fe_(1+y)Te_(0:6)Se_(0:4) single-crystalline microbridges with a width of 4 m and thicknesses ranging from 20.8 to 136.2 nm. The temperature-dependent in-plane resistan... We investigated the superconducting properties of Fe_(1+y)Te_(0:6)Se_(0:4) single-crystalline microbridges with a width of 4 m and thicknesses ranging from 20.8 to 136.2 nm. The temperature-dependent in-plane resistance of the bridges exhibited a type of metalinsulator transition in the normal state. The critical current density(J_c) of the microbridge with a thickness of 136.2 nm was82.3 kA/cm^2 at 3K and reached 105 kA/cm^2 after extrapolation to T = 0 K. The current versus voltage characteristics of the microbridges showed a Josephson-like behavior with an obvious hysteresis. These results demonstrate the potential application of ultra-thin Fe-based microbridges in superconducting electronic devices such as bolometric detectors. 展开更多
关键词 Fe-based superconductor critical current density metal-insulator-transition
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Electrochemical methods for the characterization and interfacial study of dye-sensitized solar cell 被引量:1
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作者 郑大江 叶美丹 +2 位作者 温晓茹 张囡 林昌健 《Science Bulletin》 SCIE EI CAS CSCD 2015年第9期850-863,M0003,I0008,共16页
Dye-sensitized solar cell (DSSC) is one of the most rapidly developed solar cells in the past 20 years. Many characterization methods have been employed for further understanding the operational details of the photo... Dye-sensitized solar cell (DSSC) is one of the most rapidly developed solar cells in the past 20 years. Many characterization methods have been employed for further understanding the operational details of the photo- electric conversion in DSSC as well as the evaluation of cell performance. Electrochemical methods have become pow- erful tools for studying the charge transfer and interfacial process. In this review, we introduce and explain the various electrochemical methods used to characterize and analyze DSSC, including current-voltage (I-V) scan measurement, cyclic voltammetry, electrochemical impedance spec- troscopy, intensity-modulated photocurrent spectroscopy, and intensity-modulated photovoltage spectroscopy. In ad- dition, some applications were provided as samples to elucidate electron transfer kinetics, energy levels and electrocatalytic activity of the materials used in DSSC. 展开更多
关键词 Electrochemical methods Dye-sensitized solar cells Characterization Performance - Mechanism
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Characterization of the charge transport and electrical properties in solution-processed semiconducting polymers
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作者 WANG LiGuo ZHANG HuaiWu +2 位作者 TANG XiaoLi LI YuanXun ZHONG ZhiYong 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第5期786-791,共6页
The conventional charge transport models based on density- and field-dependent mobility, only having a non-Arrhenius tem- perature dependence, cannot give good current-voltage characteristics of poly (2-methoxy-5-(2... The conventional charge transport models based on density- and field-dependent mobility, only having a non-Arrhenius tem- perature dependence, cannot give good current-voltage characteristics of poly (2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene) (MEH-PPV) hole-only devices. In this paper, we demonstrate that the current-voltage characteristics can give a good unified description of the temperature, carrier density mad electric field dependence of mobility based on both the Arrhenius temperature dependence and the non-Arrhenius temperature dependence. Fu^hermore, we perform a systematic study of charge transport and electrical properties for MEH-PPV. It is shown that the boundary carrier density has an important effect on the current-voltage characteristics. Too large or too small values of boundary carrier density will lead to incorrect cur- rent-voltage characteristics. The numerically calculated carrier density is a decreasing function of the distance to the interface, and the numerically calculated electric field is an increasing function of the distance. Both the maximum of carrier density and the minimum of electric field appear near the interface. 展开更多
关键词 charge transport electrical properties semiconducting polymers
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