Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction

In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.

Highly Sensitive Photodetectors Based on WS_(2) Quantum Dots/GaAs Heterostructures

The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.

Short-term prediction of photovoltaic power generation based on LMD-EE-ESN with error correction

Considering the instability of the output power of photovoltaic(PV)generation system,to improve the power regulation ability of PV power during grid-connected operation,based on the quantitative analysis of meteorological conditions,a short-term prediction method of PV power based on LMD-EE-ESN with iterative error correction was proposed.Firstly,through the fuzzy clustering processing of meteorological conditions,taking the power curves of PV power generation in sunny,rainy or snowy,cloudy,and changeable weather as the reference,the local mean decomposition(LMD)was carried out respectively,and their energy entropy(EE)was taken as the meteorological characteristics.Then,the historical generation power series was decomposed by LMD algorithm,and the hierarchical prediction of the power curve was realized by echo state network(ESN)prediction algorithm combined with meteorological characteristics.Finally,the iterative error theory was applied to the correction of power prediction results.The analysis of the historical data in the PV power generation system shows that this method avoids the influence of meteorological conditions in the short-term prediction of PV output power,and improves the accuracy of power prediction on the condition of hierarchical prediction and iterative error correction.

Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.

Near-Infrared Si_(0.7)Ge_(0.3)/Si p-i-n Photodetector Fabricated on SOI in CMOS Technology

A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.

Numerical Simulation and Analysis of Bipolar Junction Photogate Transistor for CMOS Image Sensor

A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.

Optimization for Top DBR’s Reflectivity in RCE Photodectector

The monolithic integration of vertical-cavity surface-emitting lasers (VCSEL) with photodetectors is very important in the application of free-space optical interconnects.Theoretical and experimental results on the resonant-cavity-enhanced (RCE) photodetector with VCSEL Structure are presented.The compatible requirement in input mirror reflectivity between the VCSEL and the RCE detector is achieved by precisely etching the top mirror.In this way,the RCE detector with relatively high quantum efficiency and necessary optical bandwidth has been obtained.[KH8/9D]

Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures

A reproducible terahertz （THz） photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz. The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.

Predictive Control of Optoelectronic Tracking System

Aim To solve the time delay problem in the optoelectronic tracking system, improving the tracking accuracy. Methods The discount least square algorithm was applied to forecast the tracking error caused by the 40?ms delay, and the predicting algorithm was improved by the adaptive discount method.Results The tracking errors of the two methods were compared, and an optimal controller with the improved adaptive discount predicting algorithm was adopted for simulation. Conclusion The predicting algorithms, especially the adaptive discount predicting algorithm, can decrease the tracking error greatly, and the desired tracking prediction can be achieved both in the transient state and in the steady state.

Monolithically Fabricated OEICs Using RTD and MSM

Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.

Analysis of variabilities of serum proteomic spectra in patients with gastric cancer before and after operation

AIM： To study the variabilities of serum proteomic spectra in patients with gastric cancer before and after operation in order to detect the specific protein markers that can be used for quick diagnosis of gastric cancer. METHODS： Proteomic spectra of 46 serum samples from patients with gastric cancer before and after operation and 40 from normal individuals were generated by IMAC-Cu protein chip and surface-enhanced laser desorption/ionization time of flight mass spectrometry. RESULTS： Fourteen differentially expressed proteins in serum were screened by analysis of proteomic spectra of preoperative patients and normal individuals. We obtained 4 proteins （heat shock protein 27, glucoseregulated protein, prohibitin, protein disulfide isomerase A3） making up marker pattern which was able to class the patient-team and normal-team. These marker patterns yielded 95.7% sensitivity and 92.5% specificity, respectively. The proteins over-expressed in serum of preoperative patients were obviously down-regulated. CONCLUSION： Specific protein markers of gastric cancer can be used for the quick diagnosis of gastric cancer and judgment of prognosis. SELDI-TOF-MS is a useful tool for the detection and identification of new protein markers in serum.

To Improve the Accuracy of Laser Pulse Range Finding by Time Scale-Up

A method of improving the accuracy of laser pulse range finding from ±10 m to ±1 m inexpensively by means of time scale up is described. Time scale up can stretch the entire flight time by a factor of 1 000 and then the stretched result is counted to calculate the distance. The use of this technique decreases the resolution of counting from nanosecond to microsecond, therefore a separate counting oscillator followed by an interpolation operation is unnecessary. This technique can improve the accuracy of laser pulse range finding inexpensively and effectively.

Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector

The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm.

A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic ＂and＂ function with different load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinction ratio of over 7dB with a 95012 load resistor and a 7mW control light power at 622Mbit/s.

Effect of minimal shoes and slope on vertical and leg stiffness during running

Purpose： This study was designed to characterize and compare the vertical（kvert） and leg（kleg） stiffness measured during running in two different footwear conditions on negative, level, and positive slopes, using kinematic data only.Methods： Fourteen male recreational runners（age 23.4 4.4 years, height 177.5 5.2 cm, and body mass 69.5 5.3 kg） were tested on 2separate days within 1 week. At each session, subjects ran seven 5-min trials on a treadmill at 10 km/h, interspersed with 5 min of sitting passive recovery. Each trial was performed on a different slope gradient, ranging from 8%（downhill） to t8%（uphill）, assigned in a random order.Furthermore, each subject ran one 5-min trial wearing minimal shoes（MS） and the subsequent trial wearing traditional shoes（TS） in a counterbalanced randomized order ensuring that each slope was ran once in MS and once in TS. Kinematic data were collected using a photocell measuring system and high-speed video camera, with kvertand klegstiffness being calculated from these data.Results： Leg compression, contact times, and vertical displacement of the center of mass during running were significantly smaller in MS compared to TS across all slopes. In the two footwear conditions, step frequency significantly increased with a（positive） increase in slope.Kinematic analyses indicated that klegwas greater when running in MS than TS and this between-footwear difference remained similar across slopes. On the contrary, kvertdid not change on the basis of footwear, but increased with positive increases in slope.Conclusion： This study showed that kvertand klegduring running respond differently to change in footwear and/or slope. These two stiffness measures can hence provide a unique insight on the biomechanical adaptations of running under varying conditions and their respective quantification may assist in furthering our understanding of training, performance, and/or injury in this sport.

Small Signal Circuit Model of Double Photodiodes

The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.

Comparison on corrosion resistance and surface film of pure Mg and Mg−14Li alloy

To study different corrosion resistances and surface film types of hexagonal close-packed(HCP)pure Mg and body-centered cubic(BCC)Mg−14wt.%Li alloy in 0.1 mol/L NaCl,a series of experiments were conducted,including hydrogen evolution,mass loss,in-situ electrochemical testing combined with Raman spectroscopy and microstructural observation.The results indicate that the corrosion resistance of pure Mg is superior to that of Mg−14Li,and the protective function of the surface films on both magnesium systems is elevated within 16 h of immersion in 0.1 mol/L NaCl.An articulated,thick,and needle-like surface film containing Li2CO3 on Mg−14Li,different from the typically thin,flaky Mg(OH)2 film on pure Mg,is confirmed via scanning electron microscopy(SEM).However,both surface films can be broken down at a high anodic over-potential.Thus,different corrosion resistances of the two Mg systems are ascribed to various protective films forming on their surfaces.

Fabrication of PdSe2/GaAs Heterojunction for Sensitive Near-Infrared Photovoltaic Detector and Image Sensor Application

In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.

A New kHz Velocity Map Ion/Electron Imaging Spectrometer for Femtosecond Time-Resolved M olecular Reaction Dynamics Studies

A new velocity map imaging spectrometer is constructed for molecular reaction dynamics studies using time-resolved photoelectron/ion spectroscopy method. By combining a kHz pulsed valve and an ICCD camera, this velocity map imaging spectrometer can be run at a repetition rate of 1 kHz, totally compatible with the fs Ti：Sapphire laser system, facilitating time-resolved studies in gas phase which are usually time-consuming. Time-resolved velocity map imaging study of NH3 photodissociation at 200 nm was performed and the time-resolved total kinetic energy release spectrum of H＋NH~ products provides rich information about the dissociation dynamics of NH3. These results show that this new apparatus is a powerful tool for investigating the molecular reaction dynamics using time-resolved methods.