A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique,...A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.展开更多
A CMOS bandgap reference （BGR） without a resistor,with a high power supply rejection ratio and output be- low 1V is proposed. The circuit is suited for on-chip voltage down converters. The BGR is designed and fabric...A CMOS bandgap reference （BGR） without a resistor,with a high power supply rejection ratio and output be- low 1V is proposed. The circuit is suited for on-chip voltage down converters. The BGR is designed and fabricated using an HUTC 0.18μm CMOS process. The silicon area is only 0. 031mm^2 excluding pads and electrostatic-discharge （ESD） protec- tion circuits. Experimental results show that the PSRR of the proposed BGR at 100Hz and lkHz achieves, respectively, - 70 and 62dB using the pre-regulator. The proposed BGR circuit generates an output voltage of 0. 5582V with a varia- tion of 1.5mV in a temperature range from 0 to 85℃. The deviation of the output voltage is within 2mV when the power supply voltage VDD changes from 2.4 to 4V.展开更多
We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The ci...We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The circuit is simulated and fabricated with SMIC 0.18μm mixed-signal technology,and our measurements demonstrate that its temperature coefficient is 44ppm/℃ and its PSRR is - 46dB, It works well when Vdd is above 650mV. The active area of the circuit is about 0.05mm^2.展开更多
文摘A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.
文摘A CMOS bandgap reference （BGR） without a resistor,with a high power supply rejection ratio and output be- low 1V is proposed. The circuit is suited for on-chip voltage down converters. The BGR is designed and fabricated using an HUTC 0.18μm CMOS process. The silicon area is only 0. 031mm^2 excluding pads and electrostatic-discharge （ESD） protec- tion circuits. Experimental results show that the PSRR of the proposed BGR at 100Hz and lkHz achieves, respectively, - 70 and 62dB using the pre-regulator. The proposed BGR circuit generates an output voltage of 0. 5582V with a varia- tion of 1.5mV in a temperature range from 0 to 85℃. The deviation of the output voltage is within 2mV when the power supply voltage VDD changes from 2.4 to 4V.
文摘We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The circuit is simulated and fabricated with SMIC 0.18μm mixed-signal technology,and our measurements demonstrate that its temperature coefficient is 44ppm/℃ and its PSRR is - 46dB, It works well when Vdd is above 650mV. The active area of the circuit is about 0.05mm^2.
