A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was ...A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.展开更多
A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance.The relationships among achievable program/erase(P/E) cycles,recovery time,bad block rate ...A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance.The relationships among achievable program/erase(P/E) cycles,recovery time,bad block rate and storage time are analyzed.The achievable endurance and service life of a NAND flash are evaluated based on a flash cell degradation and recovery model by varying recovery time,badblock rate,and storage time.It is proposed to improve the service lifetime of solid state disk by both relaxing the bad block rate limitation and retention time while extending the recovery time.The results indicate that endurance can be improved by 17 times if the storage time guarantee is reduced from 10 a to 1 a with 105 s recovery time inserted between cycles.展开更多
The wave-forcing 'Coriolis-Stokes forcing' and 'Stokes-vortex force' induced by Stokes drift affect the upper ocean jointly.To study the effect of the wave-induced Stokes drift on the dynamics of the o...The wave-forcing 'Coriolis-Stokes forcing' and 'Stokes-vortex force' induced by Stokes drift affect the upper ocean jointly.To study the effect of the wave-induced Stokes drift on the dynamics of the ocean mixed layer,a new three-dimensional(3D) numerical model is derived using the primitive basic equations and Eulerian wave averaging.The Princeton Ocean Model(POM),a 3D primitive equation ocean model is used with the upper wave-averaged basic equations.The global ocean circulation is simulated using the POM model,and the Stokes drift is evaluated based on the wave data generated by WAVEWATCH III.We compared simulations with and without the Stokes drift.The results show that the magnitude of the Stokes drift is comparable with the Eulerian mean current.Including the Stokes drift in the ocean model affects both the Eulerian current and the Lagranian drift and causes the vertical mixing coefficients to increase.展开更多
基金The National Natural Science Foundation of China(No.61604038)China Postdoctoral Science Foundation(No.2015M580376)+1 种基金the Natural Science Foundation of Jiangsu Province(No.BK20160691)Jiangsu Postdoctoral Science Foundation(No.1501010A)
文摘A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.
基金Project(61171017)supported by the National Natural Science Foundation of China
文摘A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance.The relationships among achievable program/erase(P/E) cycles,recovery time,bad block rate and storage time are analyzed.The achievable endurance and service life of a NAND flash are evaluated based on a flash cell degradation and recovery model by varying recovery time,badblock rate,and storage time.It is proposed to improve the service lifetime of solid state disk by both relaxing the bad block rate limitation and retention time while extending the recovery time.The results indicate that endurance can be improved by 17 times if the storage time guarantee is reduced from 10 a to 1 a with 105 s recovery time inserted between cycles.
基金Supported by the National Natural Science Foundation of China(No.41376028)the Open Fund of the Shandong Province Key Laboratory of Ocean Engineering,Ocean University of China(No.201362045)
文摘The wave-forcing 'Coriolis-Stokes forcing' and 'Stokes-vortex force' induced by Stokes drift affect the upper ocean jointly.To study the effect of the wave-induced Stokes drift on the dynamics of the ocean mixed layer,a new three-dimensional(3D) numerical model is derived using the primitive basic equations and Eulerian wave averaging.The Princeton Ocean Model(POM),a 3D primitive equation ocean model is used with the upper wave-averaged basic equations.The global ocean circulation is simulated using the POM model,and the Stokes drift is evaluated based on the wave data generated by WAVEWATCH III.We compared simulations with and without the Stokes drift.The results show that the magnitude of the Stokes drift is comparable with the Eulerian mean current.Including the Stokes drift in the ocean model affects both the Eulerian current and the Lagranian drift and causes the vertical mixing coefficients to increase.
