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电子设备的防雷设计及应用 被引量:5
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作者 黄裕文 《四川大学学报(自然科学版)》 CAS CSCD 北大核心 2001年第6期930-933,共4页
The principle and application of lighting protection technology are presented in this paper. The protection treatment should be designed in multi-sided and in stereo. The design and its application show that a valid l... The principle and application of lighting protection technology are presented in this paper. The protection treatment should be designed in multi-sided and in stereo. The design and its application show that a valid lighting protection system should realize directly lighting protection, sensor lighting protection and single-point grounding. The correct connecting and grounding are the key techniques of an application. 展开更多
关键词 子设备 防雷设计 SPD 电漏保护
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A Novel Multi-Functional Leakage Current Protector IC Design
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作者 韩雁 王泽 +1 位作者 俞宏 谢俊杰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第8期1537-1542,共6页
A novel type of leakage current protector chip,implemented in the mixed-signal 0.6μm CMOS process,is presented. This chip has the advantages of low power dissipation (10mW), accurate protection control based on dig... A novel type of leakage current protector chip,implemented in the mixed-signal 0.6μm CMOS process,is presented. This chip has the advantages of low power dissipation (10mW), accurate protection control based on digital response delay time and integration of multi-functions such as leakage current/over-voltage/over-load detection and protection,auto switch-on and so forth. Additionally, the chip is programmable to suit different three-level protection applications with a high anti-interference ability. 展开更多
关键词 leakage current protector IC design programmable IC
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Elimination of ESD Events and Optimizing Waterjet Deflash Process for Reduction of Leakage Current Failures on QFN-mr Leadframe Devices
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作者 Frederick Ray I.Gomez Tito T.Mangaoang Jr. 《Journal of Electrical Engineering》 2018年第4期238-243,共6页
This technical paper presents the resolution of high leakage current failures on QFN-mr (Quad-Flat No-leads Multi-Row) LF (leadframe) devices by optimizing the waterjet deflash process and eliminating the ESD (el... This technical paper presents the resolution of high leakage current failures on QFN-mr (Quad-Flat No-leads Multi-Row) LF (leadframe) devices by optimizing the waterjet deflash process and eliminating the ESD (electrostatic discharge) events. ESD damage to units can cause permanent or latent product failures which results in low final test yield, and worse, possible external customer complaints. The use of CO2 (carbon dioxide) bubbler was able to reduce the DI (deionized) water’s equivalent resistivity from 17 M? to 0.30 M?, minimizing the tribocharging effect produced during the waterjet deflash process. Moreover, ESD events were eliminated by grounding the floating assembly equipment parts and installing appropriate ESD controls. It is of high importance to reduce or eliminate the leakage current failures to ensure the product quality, especially as the market becomes more demanding. After the optimization and implementation of the corrective and improvement actions, high leakage current occurrence was significantly reduced from baseline of 5,784 ppm to 20 ppm. 展开更多
关键词 Leakage current failure ESD QFN-mr LF waterjet deflash process.
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