利用强场近似(Strong field approximation,SFA)方法研究氢负离子(H^-)在强激光场中双光子电离的能量谱,所得到的电离谱随角度的变化规律与实验结果符合得很好.进一步的研究表明,H^-离子在强激光场中双光子电离的能量谱与有质动力能有关...利用强场近似(Strong field approximation,SFA)方法研究氢负离子(H^-)在强激光场中双光子电离的能量谱,所得到的电离谱随角度的变化规律与实验结果符合得很好.进一步的研究表明,H^-离子在强激光场中双光子电离的能量谱与有质动力能有关.激光场强度越大,光电子的有质动力能也越大,能量谱向左移动越明显.我们的结果表明,使用强场近似是一种研究负离子在强激光场中电离过程的有效方法.展开更多
磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素....磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素.本文使用蒙特卡罗软件Geant4研究近地轨道的质子与α粒子分别经过150μm二氧化硅和2.54 mm铝层屏蔽后,在500/1000/5000μm InP材料中产生的非电离能量损失(non-ionizing energy loss,NIEL)、平均非电离损伤能随深度分布以及年总非电离损伤能.研究发现:低能质子射程短且较易发生非电离反应,入射粒子能谱中低能粒子占比越大,材料厚度越小,NIEL值越大;计算质子和α粒子年总非电离损伤能,质子的年总非电离损伤能占比达98%,表明质子是近地轨道内产生位移损伤的主要因素;α粒子年总非电离损伤能占比小,但其在InP中的NIEL约为质子的2-10倍,应关注α粒子在InP中产生的单粒子位移损伤效应.本文计算为InP材料在空间辐射环境的应用提供了参考依据.展开更多
磷化铟(In P)作为第二代化合物半导体材料,抗辐照能力强,光电转换效率高,在光子领域和射频领域具有优势.大气空间中, In P半导体器件受大气中子辐照影响,器件性能发生退化.本文采用蒙特卡罗模拟软件Geant4对In P中子辐照效应进行模拟,得...磷化铟(In P)作为第二代化合物半导体材料,抗辐照能力强,光电转换效率高,在光子领域和射频领域具有优势.大气空间中, In P半导体器件受大气中子辐照影响,器件性能发生退化.本文采用蒙特卡罗模拟软件Geant4对In P中子辐照效应进行模拟,得到In P中不同能量中子产生的位移损伤初态分布.结果表明:在微米量级内,非电离能量损失(NIEL)随深度均匀分布,在厘米及更高量级上, NIEL随着入射深度的增大而降低,当靶材料足够厚时可以降低至零;分析1—20 Me V中子入射3μm In P产生的NIEL及其随深度分布,发现NIEL随入射中子能量的增加呈现出先升后降的趋势,该趋势主要由非弹性散射反应产生的初级反冲原子(PKA)造成;分析1—20 Me V中子入射3μm In P产生的PKA种类、能量,发现In/P的PKA占比较大,是产生位移损伤的主要因素,中子能量越高, PKA的种类越丰富, PKA最大动能越大,但PKA主要分布在低能部分.研究结果对In P基5G器件在大气中子辐射环境中的长期应用具有理论和指导价值.展开更多
The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.The correlation between confined and non-co...The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.The correlation between confined and non-confined direction of the wire in the variational wave function is taken into account.The results show that the photoionization cross-sections are affected by the width of the wire and that their magnitudes are larger than those in infinite potential quantum well wires.In comparison with previous's results,the variational wave function improves the binding energy and decreases the value of photoionization cross-sections of the hydrogenic impurities,which makes the results more reasonable.展开更多
The mechanism for capacity fading of18650lithium ion full cells under room-temperature(RT)is discussedsystematically.The capacity loss of18650cells is about12.91%after500cycles.The cells after cycles are analyzed by X...The mechanism for capacity fading of18650lithium ion full cells under room-temperature(RT)is discussedsystematically.The capacity loss of18650cells is about12.91%after500cycles.The cells after cycles are analyzed by XRD,SEM,EIS and CV.Impedance measurement shows an overall increase in the cell resistance upon cycling.Moreover,it also presents anincreased charge-transfer resistance(Rct)for the cell cycled at RT.CV test shows that the reversibility of lithium ioninsertion/extraction reaction is reduced.The capacity fading for the cells cycled can be explained by taking into account the repeatedfilm formation over the surface of anode and the side reactions.The products of side reactions deposited on separator are able toreduce the porosity of separator.As a result,the migration resistance of lithium ion between the cathode and anode would beincreased,leading the fading of capacity and potential.展开更多
Using the closed orbit theory, the photodetachment cross section of H- near a dielectric surface has been derived and calculated. The results show that the dielectric surface has great influence on the photodetachment...Using the closed orbit theory, the photodetachment cross section of H- near a dielectric surface has been derived and calculated. The results show that the dielectric surface has great influence on the photodetachment process of negative ion near the ionization threshold. Above the ionization threshold, the photodetachment cross section starts to oscillate. With the increase of the energy, the oscillating amplitude decreases and the oscillating frequency increases. The oscillation in the photodetachment cross section of H- in the presence of a dielectric surface is either larger or smaller than the photodetachment of H- without the surface. As the photon energy is larger than the critical value Epc, the oscillatory structure disappeared and the cross section approaches to the case of the photodetachment of H- without any external fields. For a given detached-electron energy, the photodetachment cross section becomes decreased with the increase of the ion-surface distance. Besides, the dielectric constant has great influence on the photodetachment of H-. With the increase of the dielectric constant, the oscillation in the cross section becomes increased. As the dielectric constant increases to infinity, the cross section is the same as the photodetachment of H- near a metal surface. This study provides a new understanding on the photodetachment process of H- in the presence of a dielectric surface.展开更多
The photodissociation dynamics of acetaldehyde in the radical channel CH3＋HCO has been reinvestigated using time-sliced velocity map imaging technique in the photolysis wavelength range of 275-321 nm. The CH3 fragmen...The photodissociation dynamics of acetaldehyde in the radical channel CH3＋HCO has been reinvestigated using time-sliced velocity map imaging technique in the photolysis wavelength range of 275-321 nm. The CH3 fragments have been probed via （2＋1） resonance-enhanced multiphoton ionization. Images are measured for CH3 formed in the ground and excited states （v2=0 and 1） of the umbrella vibrational mode. For acetaldehyde dissociation on T1 state after intersystem crossing from S1 state, the products are formed with high translational energy release and low internal excitation. The rotational and vibrational energy of both fragments increases with increasing photodissociation energy. The triplet barrier height is estimated at 3.8814-0.006 eV above the ground state of acetaldehyde.展开更多
We measured the photoelectron spectra of Al_(n)C_(4)^(−)(n=2−4)clusters by using size-selected anion photoelectron spectroscopy.The structures of Al_(n)C_(4)^(−/0)(n=2−4)clusters were explored with quantum chemistry c...We measured the photoelectron spectra of Al_(n)C_(4)^(−)(n=2−4)clusters by using size-selected anion photoelectron spectroscopy.The structures of Al_(n)C_(4)^(−/0)(n=2−4)clusters were explored with quantum chemistry calculations and were determined by comparing the theoretical results with the experimental spectra.It is found that the most stable structure of Al_(2)C_(4)^(−) anion is a C_(2v)symmetry planar structure with two Al atoms interacting with two C_(2)units.In addition,Al_(2)C_(4)^(−) anion also has a D∞h symmetry linear structure with two Al atoms located at the two ends of a C_(4)chain,which is slightly higher in energy than the planar structure.The most stable structure of neutral Al_(2)C_(4)has a D∞h symmetry linear structure.The most stable structure of Al_(3)C_(4)^(−) anion is a planar structure with three Al atoms interacting with two C_(2)units.Whereas neutral Al_(3)C_(4)cluster has a C_(2v)symmetric V-shaped bent structure.The global minima structures of both Al_(4)C_(4)^(−) and neutral Al_(4)C_(4)are C_(2)h symmetry planar structures with four Al atoms interacting with the ends of two C_(2)units.Adaptive natural density partitioning analyses of Al_(n)C_(4)^(−)(n=2−4)clusters show that the interactions between the Al atoms and C_(2)units have bothσandπcharacters.展开更多
A large volume spherical ionization chamber of 195 mm diameter and 0.36 mg/cm2wall thickness made from conducting carbon-fibre epoxy composite material has been developed. The mechanical intensity of the chamber is sa...A large volume spherical ionization chamber of 195 mm diameter and 0.36 mg/cm2wall thickness made from conducting carbon-fibre epoxy composite material has been developed. The mechanical intensity of the chamber is satisfactory for a good longterm volume stability. Owing to its large volume and thin wall, the chamber is sensitive to low energy photon beams and has excellent energy-response characteristics. This ionization chamber is suitable not only for a laboratory reference but also for measurement of low energy photon beam exposure rates at protection-level.展开更多
文摘利用强场近似(Strong field approximation,SFA)方法研究氢负离子(H^-)在强激光场中双光子电离的能量谱,所得到的电离谱随角度的变化规律与实验结果符合得很好.进一步的研究表明,H^-离子在强激光场中双光子电离的能量谱与有质动力能有关.激光场强度越大,光电子的有质动力能也越大,能量谱向左移动越明显.我们的结果表明,使用强场近似是一种研究负离子在强激光场中电离过程的有效方法.
文摘磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素.本文使用蒙特卡罗软件Geant4研究近地轨道的质子与α粒子分别经过150μm二氧化硅和2.54 mm铝层屏蔽后,在500/1000/5000μm InP材料中产生的非电离能量损失(non-ionizing energy loss,NIEL)、平均非电离损伤能随深度分布以及年总非电离损伤能.研究发现:低能质子射程短且较易发生非电离反应,入射粒子能谱中低能粒子占比越大,材料厚度越小,NIEL值越大;计算质子和α粒子年总非电离损伤能,质子的年总非电离损伤能占比达98%,表明质子是近地轨道内产生位移损伤的主要因素;α粒子年总非电离损伤能占比小,但其在InP中的NIEL约为质子的2-10倍,应关注α粒子在InP中产生的单粒子位移损伤效应.本文计算为InP材料在空间辐射环境的应用提供了参考依据.
文摘磷化铟(In P)作为第二代化合物半导体材料,抗辐照能力强,光电转换效率高,在光子领域和射频领域具有优势.大气空间中, In P半导体器件受大气中子辐照影响,器件性能发生退化.本文采用蒙特卡罗模拟软件Geant4对In P中子辐照效应进行模拟,得到In P中不同能量中子产生的位移损伤初态分布.结果表明:在微米量级内,非电离能量损失(NIEL)随深度均匀分布,在厘米及更高量级上, NIEL随着入射深度的增大而降低,当靶材料足够厚时可以降低至零;分析1—20 Me V中子入射3μm In P产生的NIEL及其随深度分布,发现NIEL随入射中子能量的增加呈现出先升后降的趋势,该趋势主要由非弹性散射反应产生的初级反冲原子(PKA)造成;分析1—20 Me V中子入射3μm In P产生的PKA种类、能量,发现In/P的PKA占比较大,是产生位移损伤的主要因素,中子能量越高, PKA的种类越丰富, PKA最大动能越大,但PKA主要分布在低能部分.研究结果对In P基5G器件在大气中子辐射环境中的长期应用具有理论和指导价值.
文摘The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.The correlation between confined and non-confined direction of the wire in the variational wave function is taken into account.The results show that the photoionization cross-sections are affected by the width of the wire and that their magnitudes are larger than those in infinite potential quantum well wires.In comparison with previous's results,the variational wave function improves the binding energy and decreases the value of photoionization cross-sections of the hydrogenic impurities,which makes the results more reasonable.
基金Project(51574287)supported by the National Natural Science Foundation of ChinaProject(2015CX001)supported by the Innovation-driven Plan in Central South University,China
文摘The mechanism for capacity fading of18650lithium ion full cells under room-temperature(RT)is discussedsystematically.The capacity loss of18650cells is about12.91%after500cycles.The cells after cycles are analyzed by XRD,SEM,EIS and CV.Impedance measurement shows an overall increase in the cell resistance upon cycling.Moreover,it also presents anincreased charge-transfer resistance(Rct)for the cell cycled at RT.CV test shows that the reversibility of lithium ioninsertion/extraction reaction is reduced.The capacity fading for the cells cycled can be explained by taking into account the repeatedfilm formation over the surface of anode and the side reactions.The products of side reactions deposited on separator are able toreduce the porosity of separator.As a result,the migration resistance of lithium ion between the cathode and anode would beincreased,leading the fading of capacity and potential.
基金Supported by National Natural Science Foundation of China under Grant No. 10604045the University Science & Technology Planning Program of Shandong Province under Grant No. J09LA02+1 种基金the Education Department Foundation of Shandong Province under Grant No. J08LI03 the Discipline Construction Fund of Ludong University
文摘Using the closed orbit theory, the photodetachment cross section of H- near a dielectric surface has been derived and calculated. The results show that the dielectric surface has great influence on the photodetachment process of negative ion near the ionization threshold. Above the ionization threshold, the photodetachment cross section starts to oscillate. With the increase of the energy, the oscillating amplitude decreases and the oscillating frequency increases. The oscillation in the photodetachment cross section of H- in the presence of a dielectric surface is either larger or smaller than the photodetachment of H- without the surface. As the photon energy is larger than the critical value Epc, the oscillatory structure disappeared and the cross section approaches to the case of the photodetachment of H- without any external fields. For a given detached-electron energy, the photodetachment cross section becomes decreased with the increase of the ion-surface distance. Besides, the dielectric constant has great influence on the photodetachment of H-. With the increase of the dielectric constant, the oscillation in the cross section becomes increased. As the dielectric constant increases to infinity, the cross section is the same as the photodetachment of H- near a metal surface. This study provides a new understanding on the photodetachment process of H- in the presence of a dielectric surface.
基金ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.21203186 and No.21073187）, the National Key Basic Research Program of China （No.2010CB923302）, 100 Talents Program of Chinese Academy of Sciences, and Knowledge Innovation Program of Chinese Academy of Sciences.
文摘The photodissociation dynamics of acetaldehyde in the radical channel CH3＋HCO has been reinvestigated using time-sliced velocity map imaging technique in the photolysis wavelength range of 275-321 nm. The CH3 fragments have been probed via （2＋1） resonance-enhanced multiphoton ionization. Images are measured for CH3 formed in the ground and excited states （v2=0 and 1） of the umbrella vibrational mode. For acetaldehyde dissociation on T1 state after intersystem crossing from S1 state, the products are formed with high translational energy release and low internal excitation. The rotational and vibrational energy of both fragments increases with increasing photodissociation energy. The triplet barrier height is estimated at 3.8814-0.006 eV above the ground state of acetaldehyde.
基金supported by the Beijing Municipal Science&Technology Commission(No.Z191100007219009)the National Natural Science Foundation of China(No.21773255)。
文摘We measured the photoelectron spectra of Al_(n)C_(4)^(−)(n=2−4)clusters by using size-selected anion photoelectron spectroscopy.The structures of Al_(n)C_(4)^(−/0)(n=2−4)clusters were explored with quantum chemistry calculations and were determined by comparing the theoretical results with the experimental spectra.It is found that the most stable structure of Al_(2)C_(4)^(−) anion is a C_(2v)symmetry planar structure with two Al atoms interacting with two C_(2)units.In addition,Al_(2)C_(4)^(−) anion also has a D∞h symmetry linear structure with two Al atoms located at the two ends of a C_(4)chain,which is slightly higher in energy than the planar structure.The most stable structure of neutral Al_(2)C_(4)has a D∞h symmetry linear structure.The most stable structure of Al_(3)C_(4)^(−) anion is a planar structure with three Al atoms interacting with two C_(2)units.Whereas neutral Al_(3)C_(4)cluster has a C_(2v)symmetric V-shaped bent structure.The global minima structures of both Al_(4)C_(4)^(−) and neutral Al_(4)C_(4)are C_(2)h symmetry planar structures with four Al atoms interacting with the ends of two C_(2)units.Adaptive natural density partitioning analyses of Al_(n)C_(4)^(−)(n=2−4)clusters show that the interactions between the Al atoms and C_(2)units have bothσandπcharacters.
文摘A large volume spherical ionization chamber of 195 mm diameter and 0.36 mg/cm2wall thickness made from conducting carbon-fibre epoxy composite material has been developed. The mechanical intensity of the chamber is satisfactory for a good longterm volume stability. Owing to its large volume and thin wall, the chamber is sensitive to low energy photon beams and has excellent energy-response characteristics. This ionization chamber is suitable not only for a laboratory reference but also for measurement of low energy photon beam exposure rates at protection-level.
