The initial stage of Ni-TiO2 composite system electrodeposition on glassy carbon electrode from an acidic solution of nickel sulfate was investigated using cyclic voltammetry （CV）, chronoamperometry （CA） and elect...The initial stage of Ni-TiO2 composite system electrodeposition on glassy carbon electrode from an acidic solution of nickel sulfate was investigated using cyclic voltammetry （CV）, chronoamperometry （CA） and electrochemical impedance spectroscopy （EIS）. Analysis of current density-time transients was performed using the nonlinear fitting procedure and electrochemical impedance spectroscopy was simulated by Z-view software. Besides, the surface morphology of Ni-TiO2 co-deposition at the initial stage was observed by scanning electron microscopy （SEM）. The results show that, in the case of low overpotential （-790 mV vs SCE）, the presence of TiO2 particles in the plating bath makes the nucleation relaxation time tm^x decreased clearly. Meanwhile, the electro-crystallization of Ni-TiO2 system follows a Scharifker-Hills （SH） progressive nucleation/growth mechanism. While in the case of higher overpotential, the presence of the TiO2 particles in solution makes the nucleation relaxation time tmax increased. At -850 mV （vs SCE）, the co-deposition of Ni-TiO2 system meets SH instantaneous nucleation/growth mechanism. The results of impedance spectra show that the appearance of the characteristic inductive loops represents the nucleation/growth of nickel and the presence of TiO2 particles reduces the charge transfer resistance of solution. The SEM observation confirms that TiO2 particles can be considered as favorable sites for nickel nucleating.展开更多
The progressive stacking of chalcogenide single layers gives rise to two- dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet t...The progressive stacking of chalcogenide single layers gives rise to two- dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet the properties of some members of the chalcogenide family remain unexplored. Indium selenide （InSe） is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. Here, we reveal the lattice dynamics, optical and electronic properties of atomically thin InSe flakes prepared by micromechanical cleavage. Raman active modes stiffen or soften in the flakes depending on which electronic bonds are excited. A progressive blue-shift of the photoluminescence peaks is observed for decreasing flake thickness （as large as 0.2 eV for three single layers）. First-principles calculations predict an even larger increase in the bandgap, 0.40 eV, for three single layers, and as much as 1.1 eV for a single layer. These results are promising from the point of view of the versatility of this material for optoelectronic applications at the nanometer scale and compatible with Si and III-V technologies.展开更多
基金Project(MKPT-04-106) supported by the Project of National Defense of China
文摘The initial stage of Ni-TiO2 composite system electrodeposition on glassy carbon electrode from an acidic solution of nickel sulfate was investigated using cyclic voltammetry （CV）, chronoamperometry （CA） and electrochemical impedance spectroscopy （EIS）. Analysis of current density-time transients was performed using the nonlinear fitting procedure and electrochemical impedance spectroscopy was simulated by Z-view software. Besides, the surface morphology of Ni-TiO2 co-deposition at the initial stage was observed by scanning electron microscopy （SEM）. The results show that, in the case of low overpotential （-790 mV vs SCE）, the presence of TiO2 particles in the plating bath makes the nucleation relaxation time tm^x decreased clearly. Meanwhile, the electro-crystallization of Ni-TiO2 system follows a Scharifker-Hills （SH） progressive nucleation/growth mechanism. While in the case of higher overpotential, the presence of the TiO2 particles in solution makes the nucleation relaxation time tmax increased. At -850 mV （vs SCE）, the co-deposition of Ni-TiO2 system meets SH instantaneous nucleation/growth mechanism. The results of impedance spectra show that the appearance of the characteristic inductive loops represents the nucleation/growth of nickel and the presence of TiO2 particles reduces the charge transfer resistance of solution. The SEM observation confirms that TiO2 particles can be considered as favorable sites for nickel nucleating.
文摘The progressive stacking of chalcogenide single layers gives rise to two- dimensional semiconducting materials with tunable properties that can be exploited for new field-effect transistors and photonic devices. Yet the properties of some members of the chalcogenide family remain unexplored. Indium selenide （InSe） is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. Here, we reveal the lattice dynamics, optical and electronic properties of atomically thin InSe flakes prepared by micromechanical cleavage. Raman active modes stiffen or soften in the flakes depending on which electronic bonds are excited. A progressive blue-shift of the photoluminescence peaks is observed for decreasing flake thickness （as large as 0.2 eV for three single layers）. First-principles calculations predict an even larger increase in the bandgap, 0.40 eV, for three single layers, and as much as 1.1 eV for a single layer. These results are promising from the point of view of the versatility of this material for optoelectronic applications at the nanometer scale and compatible with Si and III-V technologies.
