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MOS器件界面态与陷阱电荷分离方法研究 被引量:7
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作者 何玉娟 师谦 +2 位作者 李斌 罗宏伟 林丽 《电子产品可靠性与环境试验》 2006年第4期26-29,共4页
对MOS结构器件,要分离由辐射效应引起的界面态电荷与氧化层陷阱电荷的方法有很多种,如中电带压法、电荷泵法和双晶体管法就是目前比较常用、有效的方法,分析了这些方法的优点和局限性。
关键词 界面态 氧化层陷阱电荷 电荷分离方法 辐照效应
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Photoelectrode for water splitting: Materials,fabrication and characterization 被引量:6
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作者 Zhiliang Wang Lianzhou Wang 《Science China Materials》 SCIE EI CSCD 2018年第6期806-821,共16页
Photoelectorchemical(PEC) water splitting is an attractive approach for producing sustainable and environment-friendly hydrogen. An efficient PEC process is rooted in appropriate semiconductor materials, which shoul... Photoelectorchemical(PEC) water splitting is an attractive approach for producing sustainable and environment-friendly hydrogen. An efficient PEC process is rooted in appropriate semiconductor materials, which should possess small bandgap to ensure wide light harvest, facile charge separation to allow the generated photocharges migrating to the reactive sites and highly catalytic capability to fully utilize the separated photocharges. Proper electrode fabrication method is of equal importance for promoting charge transfer and accelerating surface reactions in the electrodes. Moreover,powerful characterization method can shed light on the complex PEC process and provide deep understanding of the rate-determining step for us to improve the PEC systems further. Targeting on high solar conversion efficiency, here we provide a review on the development of PEC water splitting in the aspect of materials exploring, fabrication method and characterization. It is expected to provide some fundamental insight of PEC and inspire the design of more effective PEC systems. 展开更多
关键词 PHOTOELECTRODE water splitting semiconductor material electrode fabrication CHARACTERIZATION
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The effect of boron on the electronic structure of dislocation in NiAl 被引量:1
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作者 CHEN LiQun YU Tao 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2011年第5期815-820,共6页
The segregation effect of B on the [100](010) edge dislocation core in NiA1 single crystals is investigated using the DMol method and the discrete variational method within the framework of density functional theory... The segregation effect of B on the [100](010) edge dislocation core in NiA1 single crystals is investigated using the DMol method and the discrete variational method within the framework of density functional theory. The impurity segregation en- ergy and the charge distribution are calculated. The effects of B on the dislocation motion are discussed. The results show that B prefers to segregate at the Center-Al dislocation core. Moreover, B forms strong bonding states with its neighboring host atoms, which may not be beneficial to the motion of the dislocation. Therefore, it can be expected that the strength of NiAl single crystals may be increased. 展开更多
关键词 electronic structure DISLOCATION IMPURITY
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