In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source. Two-dimensional analytical models of surface potential and threshold voltage fo...In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source. Two-dimensional analytical models of surface potential and threshold voltage for the novel SOI MOSFET are developed based on the explicit solution of the two-dimensional Poisson＇s equation. Its characteristic improvement is investigated. It is concluded that the novel structure exhibits better suppression of drain-induced barrier lowering and higher carrier transport efficiency than conventional dual material gate SOI MOSFETs. Its drain-induced barrier lowering decreases with increasing halo doping concentration but does not change monotonically with halo length. The analytical models agree well with the two-dimensional device simulator MEDICI.展开更多
An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived...An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the maximum breakdown voltage and optimal relations of all design parameters.Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data.展开更多
文摘In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source. Two-dimensional analytical models of surface potential and threshold voltage for the novel SOI MOSFET are developed based on the explicit solution of the two-dimensional Poisson＇s equation. Its characteristic improvement is investigated. It is concluded that the novel structure exhibits better suppression of drain-induced barrier lowering and higher carrier transport efficiency than conventional dual material gate SOI MOSFETs. Its drain-induced barrier lowering decreases with increasing halo doping concentration but does not change monotonically with halo length. The analytical models agree well with the two-dimensional device simulator MEDICI.
文摘An analytical model of the surface field distribution and breakdown voltage of the reduced surface field lateral double diffusion MOS transistor is proposed.Based on the 2-D Poisson's equation solution,the derived model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.A criterion for obtaining the optimal trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the maximum breakdown voltage and optimal relations of all design parameters.Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data.
