Ag-MoS_2复合镀层性能研究

本文对Ag-MoS_2复合镀层的特性,如表面形貌、镀层硬度、耐磨性和电性能等进行了研究.试验结果表明Ag-MoS_2复合镀层和纯Ag镀层相比,在表面形貌上无多大区别。它的硬度提高约20％～30％;摩擦系统减小24％～40％。磨损量减少10％～15％。寿命试验1万次后,纯Ag镀层的刀头磨损率为67％,而Ag-MoS_2复合镀层的刀头仅为10％。寿命试验1.5万次后,纯Ag镀层的接触电阻为9～34mΩ,而Ag-MoS_2复合镀层为7～22mΩ。

Deep-Hole Inner Diameter Measuring System Based on Non-contact Capacitance Sensor

A precise aperture measuring system of small deep holes with capacitance sensors is presented. Based on the working principle of non-contact capacitance sensors, influence of the edge effect of gauge head is studied, and one capacitance sensor for measuring the aperture of the small blind holes or through holes is introduced. The system is composed of one positioning device, one aperture measuring capacitance sensor, one measuring circuit, and software. This system employs visual CCD and two-dimensional mic...

Bioleaching of chalcopyrite with Acidianus manzaensis YN25 under contact and non-contact conditions

In order to investigate the contributions of contact and non-contact cells of Acidianus manzaensis(A.manzaensis) YN25 to the bioleaching of chalcopyrite,three experiments were carried out in the modified shake flasks.The redox potential,pH,cell density,copper and iron ions in the solution were monitored,and the morphological feature and chemical composition of the leached residues were analyzed.The highest leaching efficiency of Cu and Fe was reached in the experiment where the A.manzaensis YN25 could contact the surface of the chalcopyrite.There was no precipitation of jarosite in the leached residues of three experiments,but there was elemental sulfur in the leached residues when the cells could not contact the chalcopyrite.From these results,it is apparent that the leaching of the chalcopyrite is the cooperative action of the contact and non-contact A.manzaensis YN25.

Scattering Theory of Current Noise in Nanoscale Devices with Electron-electron and Electron-phonon Interactions

In this paper, we derive a unified scattering theory model for current noise based on the equivalent contact model of the scattering region. Our model seamlessly covers the whole range of transport regimes from coherent transport to incoherent transport and it also includes the effects of Pauli exclusion and Coulomb interaction on shot noise.

Fabrication of high-quality all-graphene devices with low contact resistances

All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.

Highly efficient organic solar cells enabled by a porous ZnO/PEIE electron transport layer with enhanced light trapping

In this study,a porous inorganic/organic(ZnO/PEIE,where PEIE is polyethylenimine ethoxylated)(P-ZnO)hybrid material has been developed and adopted in the inverted organic solar cells(OSCs).The P-ZnO serving as the electron transport layer(ETL)not only presents an ameliorative work function,but also forms the cratered surface with increased ohmic contact area,revealing suppressed charge recombination and enhanced charge extraction in devices.Particularly,P-ZnO-based OSCs show improved light trapping in the active layer compared with ZnO-based ones.The universality of P-ZnO serving as ETL for efficient OSCs is verified on three photovoltaic systems of PBDB-T/DTPPSe-2 F,PM6/Y6,and PTB7-Th/PC_(71)BM.The enhancements of 8%in power conversion efficiency(PCE)can be achieved in the state-of-the-art OSCs based on PBDB-T/DTPPSe-2F,PM6/Y6,and PTB7-Th/PC_(71)BM,delivering PCEs of 14.78%,16.57%,and 9.85%,respectively.Furthermore,a promising PCE of14.13%under air-processed condition can be achieved for PZnO/PBDB-T/DTPPSe-2F-based OSC,which is among the highest efficiencies reported for air-processed OSCs in the literature.And the P-ZnO/PBDB-T/DTPPSe-2F-based device also presents superior long-term storage stability whether in nitrogen or ambient air-condition without encapsulation,which can maintain over 85%of its initial efficiency.Our results demonstrate the great potential of the porous hybrid PZnO as ETL for constructing high-performance and air-stable OSCs.

Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters

The newly emerged two-dimensional(2D) semiconducting materials, owning to the atomic thick nature and excellent optical and electrical properties, are considered as potential candidates to solve the bottlenecks of traditional semiconductors. However, the realization of high performance 2D semiconductorbased field-effect transistors(FETs) has been a longstanding challenge in 2D electronics, which is mainly ascribing to the presence of significant Schottky barrier(SB) at metal-semiconductor interfaces. Here, an additional contact gate is induced in 2D ambipolar FET to realize near ideal reconfigurable FET(RFET)devices without restrictions of SB. Benefitting from the consistently high doping of contact region, the effective SB height can be maintained at ultra-small value during all operation conditions, resulting in the near ideal subthreshold swing(SS) values(132 mV/decade for MoTe2 RFET and 67 mV/decade for WSe2 RFET) and the relatively high mobility(28.6 cm2/(Vs) for MoTe2 RFET and 89.8 cm2/(V s) for WSe2 RFET). Moreover, the flexible control on the doping polarity of contact region enables the remodeling and switching of the achieved unipolar FETs between p-type mode and n-type mode. Based on such reconfigurable behaviors, high gain complementary MoTe2 inverters are further realized. The findings in this work push forward the development of high-performance 2D semiconductor integrated devices and circuits.