八路温度信号转换电路

本文介绍了一种实用电路。该电路可以将八路温度信号转换成相应的八路标准信号；并且使输出信号与输入信号之间呈线性化关系。

Photo-Controlled MOBILE's

A novel optoelectronic functional circuit with heterojunction phototransistors (HPTs) and resonant tunneling diodes (RTDs) is described,which presents the function of both photocurrent switching and photo-current latching.These behaviors have been demonstrated by simulating experiments and circuit simulation.Furthermore,basing on photo-current latching behavior,various photo-controlled basis logic elements such as delayed flip-flop (DFF) can be designed and fabricated.

Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse

The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.

A Dual Source Power Based EV Wireless Charging System

Recently,there has been a huge increase in the usage of fuel resources for automobiles which is severely affecting the climate and causing global warming.The use of electric vehicle(EV)is an effective way to protect the environment and reduce travel costs.However,the EV charging system has a single charging source,and the charging rate is limited.In this paper,an EV wireless charging system based on dual source power supply has been developed.It realizes intelligent switching between 12 V photovoltaic output and 220 V AC dual source power,and has wireless transmission function.Based on the proposed power supply architecture,the micro wireless charging model is built,which enables the EV model to store power and realize static and mobile control through the wireless induction charging system.

绕线转子无刷双馈电机‘Π’型等效电路

等效电路是电机性能分析的重要工具。由于无刷双馈电机为多耦合系统,传统等效电路计算复杂,该文提出了无刷双馈电机更简洁的‘Π’型等效电路,为这种电机的性能分析提供了简单有效的方法。首先根据感应电机基本原理,引出了无刷双馈电机的基本等效电路,考虑无刷双馈电机具体适用工况,将基本等效电路参数均折算到控制绕组。然后,在控制绕组为参考的等效电路基础上,通过电路等效,导出无刷双馈电机的‘Π’型等效电路。进一步对绕线转子无刷双馈电机等效电路的参数获得进行研究,讨论了使用解析法需要注意的地方;并提出用试验直接测定无刷双馈电机基本电路参数的办法。最后,在60k W绕线转子无刷双馈电机样机平台上进行试验,试验结果验证了‘Π’型等效电路的有效性,及参数计算、测试方法的正确性。

Hand-eye-vision based control for an inspection robot's autonomous line grasping

In order to ensure that the off-line arm of a two-arm-wheel combined inspection robot can reliably grasp the line in case of autonomous obstacle crossing,a control method is proposed for line grasping based on hand-eye visual servo.On the basis of the transmission line's geometrical characteristics and the camera's imaging principle,a line recognition and extraction method based on structure constraint is designed.The line's intercept and inclination are defined in an imaging space to represent the robot's change of pose and a law governing the pose decoupling servo control is developed.Under the integrated consideration of the influence of light intensity and background change,noise(from the camera itself and electromagnetic field)as well as the robot's kinetic inertia on the robot's imaging quality in the course of motion and the grasping control precision,a servo controller for grasping the line of the robot's off-line arm is designed with the method of fuzzy control.An experiment is conducted on a 1:1 simulation line using an inspection robot and the robot is put into on-line operation on a real overhead transmission line,where the robot can grasp the line within 18 s in the case of autonomous obstacle-crossing.The robot's autonomous line-grasping function is realized without manual intervention and the robot can grasp the line in a precise,reliable and efficient manner,thus the need of actual operation can be satisfied.

Experiences in using gas dispersion measurements to evaluate metallurgical performance of scavenger cleaner and recleaner circuit at Vale's Thompson Mill

The performance of a flotation circuit is largely the result of the operator's response to visual clues. This includes manipulation of the gas input and how it is distributed to cells in a bank. A new gas dispersion technology was presented which was conducted to perform characterization tests in Outokumpu 30 m3 and 50 m3 flotation cells installed at Thompson Vale's concentrator, and subsequent data analysis. The experimental program was designed to establish "as-found" baseline conditions for each cell of the two-parallel banks in the scavenger-cleaner and recleaner circuit, to select and characterize one typical cell in the two banks with either different frother concentrations or different air flow rates, and establish what variables can be manipulated in future characterization work. A three-parameter model was developed in order to link the bubble size and frother concentration. This relationship can be used to correlate gas dispersion change to improved metallurgical performance.

Hooke's Atom in an Arbitrary External Electric Field: Analytical Solutions of Two-Electron Problem by Path Integral Approach

By using the path integral approach, we investigate the problem of Hooke＇s atom （two electrons interacting with Coulomb potential in an external harmonic-oscillator potential） in an arbitrary time-dependent electric field. For a certain infinite set of discrete oscillator frequencies, we obtain the analytical solutions. The ground state polarization of the atom is then calculated. The same result is also obtained through linear response theory.

Effects of direct current electric field on corrosion behaviour of copper, Cl- ion migration behaviour and dendrites growth under thin electrolyte layer

Effect of direct current electric field （DCEF） on corrosion behaviour of copper printed circuit board （PCB-Cu）, Cl-ion migration behaviour, dendrites growth under thin electrolyte layer was investigated using potentiodynamic polarization and scanning electron microscopy （SEM） with energy dispersive spectrometer （EDS）. Results indicate that DCEF decreases the corrosion of PCB-Cu;Cl-ions directionally migrate from the negative pole to the positive pole, and enrich on the surface of the positive pole, which causes serious localized corrosion; dendrites grow on the surface of the negative pole, and the rate and scale of dendrite growth become faster and greater with the increase of external voltage and exposure time, respectively.

Effect of gas bubble on cell voltage oscillations based on equivalent circuit simulation in aluminum electrolysis cell

A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.

Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits

Based on the physical characteristics of SiGe material,a new three-dimensional （3D） CMOS IC structure is proposed,in which the first device layer is made of Si material for nMOS devices and the second device layer is made of Six Ge1- x material for pMOS. The intrinsic performance of ICs with the new structure is then limited by Si nMOS.The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI. The simulation results indicate that the Si-SiGe 3D CMOS ICs are faster than the Si-Si 3D CMOS ICs. The delay time of the 3D Si-SiGe CMOS inverter is 2-3ps,which is shorter than that of the 3D Si-Si CMOS inverter.

A Piecewise-Linear Compensated Bandgap Reference

A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some sub ranges.At different temperature sub ranges the bandgap reference can be compensated by different linear functions.Since the temperature sub range is much narrower than the whole range,the compensation error can be reduced significantly.Theoretically,the precision can be improved unlimitedly if the sub ranges are narrow enough.In the given example,with only three temperature sub ranges,the temperature coefficient of a conventional bandgap reference drops from 1 5×10 -5 /℃ to 2×10 -6 /℃ over the -40℃ to 120℃ temperature range.

A New AC Driving Method for a Current-Programmed AM-OLED Pixel Circuit

A new,improved pixel-driving circuit is presented based on a current-programmed pixel circuit in order to achieve an AC-driving mode. This driving method realizes an AC-driving mode,removes the threshold voltage variation of the driving TFT due to the process variation or long-term operation,which can bring about brightness non-uniformity, and eliminates high peak pulse currents at the beginning and end of recovery time. Simulation is done with AIM-SPICE,and simulation results demonstrate that the OLED is in the reverse-biased state during recovery time.

A Novel CMOSDual-Modulus Prescaler Based on New Optimized Structure and Dynamic Circuit Technique

s:A divide- by- 12 8/ 12 9or6 4/ 6 5 dual- modulus prescaler based on new optimized structure and dynam ic circuit technique im plem ented in 0 .2 5 μm CMOS digital technology is described.New optimized structure reduces the propagation delay and has higher operating speed.Based on this structure,an im proved D- flip- flop(DFF) using dynam ic circuit technique is proposed.A prototype is fabricated and the measured results show that this prescaler works well in gigahertz frequency range and consumes only35 m W(including three power- hungry output buffers) when the input frequency is2 .5 GHz and the power supply voltage is2 .5 V.Due to its excellent perform ance,the prescaler could be applied to many RF system s.

Epitaxial Growth of 150mm Silicon Epi\|Wafers for Advanced IC Applications

With the device feature's size miniaturization in very large scale integrated circuit and ultralarge scale integrated circuit towards the sub\|micron and beyond level, the next generation of IC device requires silicon wafers with more improved electrical characteristics and reliability as well as a high perfection of the wafer surface. Compared with the polished wafer with a relatively high density of crystal originated defects (e. g. COPs), silicon epi\|wafers can meet such high requirements. The current development of researches on the 150mm silicon epi\|wafers for advanced IC applications is described. The P/P\++ CMOS silicon epi\|wafers were fabricated on a PE2061 Epitaxial Reactor (made by Italian LPE Company). The material parameters of epi\|wafers, such as epi\|defects, uniformity of thickness and resistivity, transition width, and minority carrier generation lifetime for epi\|layer were characterized in detail. It is demonstrated that the 150mm silicon epi\|wafers on PE2061 can meet the stringent requirements for the advanced IC applications.

A 1.25Gb/s InP-Based Vertical Monolithic Integration of an MQW Laser Diode and an HBT Driver witha Lateral Buffer Mes a Structure

A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.

A Radial Stub Test Circuit for Microwave Power Devices

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal,the maximum gain is 8.75dB,and the maximum output power is 33.2dBm.

A Fully Integrated CMOS Readout Circuit for Particle Detectors

Novel schemes for a charge sensitive amplifier （CSA） and a CR-（RC）, semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge（ENC） is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss. The CR-（RC）,semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.

A Novel Impedance Matching Approach for Passive UHF RFID Transponder ICs

This paper presents a novel impedance matching approach for passive UHF RFID transponder ICs,which are compatible with the ISO/IEC 18000-6B standard and operate in the 915MHz ISM band. The passive UHF RFID transponder with complex impedances is powered by received RF energy. The approach uses the parasitic inductance of the antenna to implement ASK modulation by adjusting the capacitive reactance of the matching network, which changes with the backscatter circuit. The impedance matching achieves maximum power transfer between the reader, antenna, and transponder. The transponder IC,whose operating distance is more than 4m with the impedance matching approach,is fabricated using a Chartered 0.35μm two-poly four-metal CMOS process that supports Schottky diodes and EEPROM.

Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC

This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad（Si）. The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at 1Mrad（Si） and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to 1Mrad （Si）. The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad（Si）.