Three aspects of RS 485 application, which affect the reliability of communication of data system are analyzed and discussed. In network configuration, it presents the optimal configuration for the bus of RS 485, the ...Three aspects of RS 485 application, which affect the reliability of communication of data system are analyzed and discussed. In network configuration, it presents the optimal configuration for the bus of RS 485, the better rule for derivative line and the choice for termination. In hardware design, it presents three parts of driver’s peripheral circuit. In control software design, it presents a method of using 75176’s DE line to control the driver.展开更多
Among the various micro-powers being investigated, betavoltaic batteries are very attractive for numerous applications because of their advantages of high energy density, long life, strong anti-interference, and so on...Among the various micro-powers being investigated, betavoltaic batteries are very attractive for numerous applications because of their advantages of high energy density, long life, strong anti-interference, and so on. Based on the basic principle of the betavoltaic effect, the current paper adopted the Monte Carlo N-Particle code to simulate the transport processes of β particles in semiconductor materials and to establish the calculation formulas for nuclear radiation-generated current, open circuit voltage, and so on. By discussing the effect of minority carrier diffusion length, doping concentration, and junction depth on the property of batteries, the present work concluded that the best parameters for batteries are the use of silicon and the radioisotope Ni-63, i.e., Ni-63 with a mass thickness of 1 mg/cm2, Na=1×1019 cm-3, Nd=3.16×1016 cm-3, junction area of 1 cm2, junction depth of 0.3 μm, and so on. Under these parameters the short-circuit current, open circuit voltage, output power, and conversion efficiency are 573.3 nA, 0.253 V, 99.85 nW, and 4.94%, respectively. Such parameters are valuable for micro-power fields, such as micro-electromechanical systems and pacemakers, among others.展开更多
Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high en...Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high energy density,strong anti-jamming capability,and so on.Based on the theory of semiconductor physics,the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope 147Pm.In consideration of the isotope's self-absorption effect,the current paper studied and analyzed the optimization thickness of semiconductor and isotope source,junction depth,depletion region thickness,doping concentration,and the generation and collection of electron hole pairs with simulation of transport process of beta particles in semiconductor material using Monte Carlo simulation program MCNP.In the proposed design scheme,for a single decay,an average energy of 28.2 keV was deposited in the GaN,and the short circuit current density,open circuit voltage,and efficiency of a single device were 1.636 μA/cm2,3.16 V,and 13.4%,respectively.展开更多
文摘Three aspects of RS 485 application, which affect the reliability of communication of data system are analyzed and discussed. In network configuration, it presents the optimal configuration for the bus of RS 485, the better rule for derivative line and the choice for termination. In hardware design, it presents three parts of driver’s peripheral circuit. In control software design, it presents a method of using 75176’s DE line to control the driver.
基金supported by the China Postdoctoral Science Foundation Funded Project (Grant No. 20100481140)the Nanjing University of Aeronautics and Astronautics Basic Research Funded Project (Grant No. Y1065-063)
文摘Among the various micro-powers being investigated, betavoltaic batteries are very attractive for numerous applications because of their advantages of high energy density, long life, strong anti-interference, and so on. Based on the basic principle of the betavoltaic effect, the current paper adopted the Monte Carlo N-Particle code to simulate the transport processes of β particles in semiconductor materials and to establish the calculation formulas for nuclear radiation-generated current, open circuit voltage, and so on. By discussing the effect of minority carrier diffusion length, doping concentration, and junction depth on the property of batteries, the present work concluded that the best parameters for batteries are the use of silicon and the radioisotope Ni-63, i.e., Ni-63 with a mass thickness of 1 mg/cm2, Na=1×1019 cm-3, Nd=3.16×1016 cm-3, junction area of 1 cm2, junction depth of 0.3 μm, and so on. Under these parameters the short-circuit current, open circuit voltage, output power, and conversion efficiency are 573.3 nA, 0.253 V, 99.85 nW, and 4.94%, respectively. Such parameters are valuable for micro-power fields, such as micro-electromechanical systems and pacemakers, among others.
基金supported by the China Postdoctoral Science Foundation Funded Project (Grant No. 20100481140)the Nanjing University of Aeronautics and Astronautics Basic Research Funded Project (Grant No. Y1065-063)
文摘Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high energy density,strong anti-jamming capability,and so on.Based on the theory of semiconductor physics,the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope 147Pm.In consideration of the isotope's self-absorption effect,the current paper studied and analyzed the optimization thickness of semiconductor and isotope source,junction depth,depletion region thickness,doping concentration,and the generation and collection of electron hole pairs with simulation of transport process of beta particles in semiconductor material using Monte Carlo simulation program MCNP.In the proposed design scheme,for a single decay,an average energy of 28.2 keV was deposited in the GaN,and the short circuit current density,open circuit voltage,and efficiency of a single device were 1.636 μA/cm2,3.16 V,and 13.4%,respectively.
