When interrupting short circuit fault by 40.5-kV vacuum circuit breakers, it is significant to eliminate multiple restrike phenomena, which occur frequently and result in high overvoltage and even interruption failure...When interrupting short circuit fault by 40.5-kV vacuum circuit breakers, it is significant to eliminate multiple restrike phenomena, which occur frequently and result in high overvoltage and even interruption failure. A synthetic circuit that can supply a DC recovery voltage after current zero was used to study multiple restrike phenomena in switching. Some key factors including breaking current, clearance between open contacts, electrode structure and contact material, which may affect restrike characteristics, were studied. Under various clearances, the statistical probability of restrike was obtained. As a result, the best scope of clearance between open contacts was found. The performance of CuCr50/50 and CuCr75/25 material were compared. Two kinds of electrode structures, namely 1/2 coil structure and cup-shaped axial magnetic structure, were tested. After a high-current interruption, conditioning effoct was realized and the probability of restrike decreased.展开更多
The newly emerged two-dimensional(2D) semiconducting materials, owning to the atomic thick nature and excellent optical and electrical properties, are considered as potential candidates to solve the bottlenecks of tra...The newly emerged two-dimensional(2D) semiconducting materials, owning to the atomic thick nature and excellent optical and electrical properties, are considered as potential candidates to solve the bottlenecks of traditional semiconductors. However, the realization of high performance 2D semiconductorbased field-effect transistors(FETs) has been a longstanding challenge in 2D electronics, which is mainly ascribing to the presence of significant Schottky barrier(SB) at metal-semiconductor interfaces. Here, an additional contact gate is induced in 2D ambipolar FET to realize near ideal reconfigurable FET(RFET)devices without restrictions of SB. Benefitting from the consistently high doping of contact region, the effective SB height can be maintained at ultra-small value during all operation conditions, resulting in the near ideal subthreshold swing(SS) values(132 mV/decade for MoTe2 RFET and 67 mV/decade for WSe2 RFET) and the relatively high mobility(28.6 cm2/(Vs) for MoTe2 RFET and 89.8 cm2/(V s) for WSe2 RFET). Moreover, the flexible control on the doping polarity of contact region enables the remodeling and switching of the achieved unipolar FETs between p-type mode and n-type mode. Based on such reconfigurable behaviors, high gain complementary MoTe2 inverters are further realized. The findings in this work push forward the development of high-performance 2D semiconductor integrated devices and circuits.展开更多
For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied ...For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.展开更多
文摘When interrupting short circuit fault by 40.5-kV vacuum circuit breakers, it is significant to eliminate multiple restrike phenomena, which occur frequently and result in high overvoltage and even interruption failure. A synthetic circuit that can supply a DC recovery voltage after current zero was used to study multiple restrike phenomena in switching. Some key factors including breaking current, clearance between open contacts, electrode structure and contact material, which may affect restrike characteristics, were studied. Under various clearances, the statistical probability of restrike was obtained. As a result, the best scope of clearance between open contacts was found. The performance of CuCr50/50 and CuCr75/25 material were compared. Two kinds of electrode structures, namely 1/2 coil structure and cup-shaped axial magnetic structure, were tested. After a high-current interruption, conditioning effoct was realized and the probability of restrike decreased.
基金supported by the National Natural Science Foundation of China (U19A2090, 51902098, 51972105, 51525202, and 61574054)the Hunan Provincial Natural Science Foundation (2018RS3051)。
文摘The newly emerged two-dimensional(2D) semiconducting materials, owning to the atomic thick nature and excellent optical and electrical properties, are considered as potential candidates to solve the bottlenecks of traditional semiconductors. However, the realization of high performance 2D semiconductorbased field-effect transistors(FETs) has been a longstanding challenge in 2D electronics, which is mainly ascribing to the presence of significant Schottky barrier(SB) at metal-semiconductor interfaces. Here, an additional contact gate is induced in 2D ambipolar FET to realize near ideal reconfigurable FET(RFET)devices without restrictions of SB. Benefitting from the consistently high doping of contact region, the effective SB height can be maintained at ultra-small value during all operation conditions, resulting in the near ideal subthreshold swing(SS) values(132 mV/decade for MoTe2 RFET and 67 mV/decade for WSe2 RFET) and the relatively high mobility(28.6 cm2/(Vs) for MoTe2 RFET and 89.8 cm2/(V s) for WSe2 RFET). Moreover, the flexible control on the doping polarity of contact region enables the remodeling and switching of the achieved unipolar FETs between p-type mode and n-type mode. Based on such reconfigurable behaviors, high gain complementary MoTe2 inverters are further realized. The findings in this work push forward the development of high-performance 2D semiconductor integrated devices and circuits.
基金supported by the Natural Science Foundation of Gansu Province,China(Grant No.145RJZA226)Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2013-35)Beijing Municipal Commission of Science and Technology(Grant Nos.Z131100006013005 and Z131100006013004)
文摘For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.
