汽车点火线圈的宽频电路模型及参数提取

点火线圈在实际点火过程中为一瞬态电压变压器,为了能预测其宽频特性,文中将点火线圈绕组等效为多段独立线饼,并以此建立基于集总参数的电路模型。通过有限元法与数据拟合方法,确定各线饼间的电容以及每一线饼内的绕组匝间等效电容;对于线圈电感,利用有限元法分析了频率对电感值的影响,得到低频段内与高频段内的电感值。最后,仿真计算了点火线圈的频域阻抗特性以及时域瞬态电压响应,并分别与测试结果做对比,验证电路模型与参数计算方法的正确性与可行性。

用分布参数电路模型研究稠油油井加热功率问题

用分布参数电路模型对稠油油井中频加热功率沿井深的分布进行了深入研究.得出油井井筒加热过程中热功率随井深按非线性规律变化,越靠近井口发热功率越大.这正好弥补了稠油提升过程中温度的下降,从而提高了加热效率、降低加热成本,达到节能降耗的目的.

CMOS RFIC平面螺旋差分变压器参数化等效电路建模

对现今常用的八边形CMOS RFIC平面螺旋差分变压器进行了参数化的2-π集总参数等效电路建模。所建模型包含随频率变化的各种损耗效应,各元件值均可根据工艺参数和器件几何尺寸以参数化的解析表达式得出。将电路仿真值与ADS Momentum器件仿真值进行对比,两者在DC^20 GHz谐振点前的频率范围内都得到了较好的拟合效果。在此基础上,对同样结构的巴仑也进行了建模和仿真。从仿真结果分别得出两者符合实际应用需要的频段。

GaAs MMIC开关MESFET电路建模技术研究

基于Agilent公司的IC-CAP软件及GaAs圆片工艺加工线,研究了砷化镓微波毫米波单片集成电路(GaAs M-MMIC)开关MESFET电路建模技术及其应用。讨论了MMIC设计中电路建模技术的重要性,提出了高精度GaAs MMIC开关MESFET简化电路模型及不同栅宽模型参数的比例缩放方案,扩展了电路模型的应用频率范围,解决了电路模型参教提取中的关键问题,如:开关MESFET模型的版图设计、微波探针校准图形的设计、电路模型参数的提取、统计和确认。采用该技术提取的电路模型参数,成功研制出GaAs MMIC控制电路系列产品,验证了该方法的有效性。

电力变压器频域介电谱特性仿真模型的对比研究

基于50 k V单相双绕组实际变压器的结构和尺寸,构建了用于变压器频域介电谱(FDS)仿真的改进型有限元模型和集总参数电路模型,并将两者的仿真结果与传统有限元模型仿真结果进行对比,分析了变压器绕组及高压绕组与变压器壁间结构对变压器FDS结果的影响。结果表明:传统的变压器仿真模型仅考虑了高低压绕组间的油纸绝缘结构,以此法评估变压器的绝缘状态会产生较大误差。变压器高压绕组与变压器壁间结构使变压器复介电常数实部在全频段内稍有降低;虚部在低频段内稍微增大,在中高频段内呈现降低趋势。这可由绝缘油与油浸纸板的FDS特性差异来解释。由于绕组自身存在电阻和电感,且相邻两饼绕组间存在电导和电容,考虑绕组影响后变压器的复介电常数实部和虚部均呈现降低趋势。最后通过试验初步验证了所得结论的正确性。

大型水轮发电机定子绕组分布电容对位移电压影响分析

景洪电站发电机三相电势对称,且静态实测三相对地电容近似相等,在此条件下发电机正常运行时中性点仍有明显的位移电压,集中参数电路模型无法解释该现象,因此提出基于准分布电容参数模型的中性点位移电压分析方法。通过电路分析,得到定子绕组对地准分布电容与中性点位移电压的关系式,理论解释了分布电容不均匀会导致位移电压出现。采用兰州电机厂制造的12kW实验样机进行了实验验证,并针对准分布电容中偏大或偏小电容所在位置以及电容不均匀度对位移电压影响的实验结果进行了定量分析。针对由分布电容不均匀所带来的位移电压偏大的问题,提出在机端外挂电容的解决方案,理论求解外挂电容值,并通过仿真实验验证了方案的有效性。

Small-Signal Equivalent Circuit Modeling of a Photodetector Chip

A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.

Non-Destructive Parameters Extraction for a Novel IGBT SPICE Model and Verified with Measurements

An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.

新型同轴型混合碳纳米管填充的硅通孔

针对碳纳米管填充的硅通孔（TSV）的信号传输性能优化问题,提出一种新型的基于同轴型混合碳纳米管填充的硅通孔结构。在内外层管束交界处的耦合电容的基础上,提出新型TSV结构的可变参数等效电路模型,并基于TSV在三种不同应用层次上的尺寸参数,通过此电路模型分析新型TSV中的信号传输性能。分析结果表明,在0~40 GHz内与单一类型碳纳米管填充的TSV相比,所提出TSV结构具有更小的插入损耗与更短的上升时延,并随TSV的尺寸增大优势更加显著。最后,对所提出TSV结构进行时域眼图仿真,仿真结果表明其在高速集成电路中可以满足对信号完整性的要求。

Parameter Extraction for 2-π Equivalent Circuit Model of RF CMOS Spiral Inductors

A novel parameter extraction method with rational functions is presented for the 2-πequivalent circuit model of RF CMOS spiral inductors. The final S-parameters simulated by the circuit model closely match experimental data. The extraction strategy is straightforward and can be easily implemented as a CAD tool to model spiral inductors. The resulting circuit models will be very useful for RF circuit designers.

Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance

With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.

Modeling and Parameter Extraction of VDMOSFET

A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technical parameters and simplify the sub circuit efficiently.As a result of numeric computation,this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response (DC error within 5%,AC error within 10%).Such a model is now available for circuit simulation and parameter extraction.

Modeling and Simulation of Photoelectronic Lambda Bipolar Transistor

Based on the region model of lambda bipolar transistor ( LBT), a dividing region theory model of PLBT is set up,simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor ( PLBT) are characterized by a simple circuit model. Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly, by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simu- lation results are made, which show that the analytical results are in agreement with the observed devices characteristics.

An Efficient Approach for the Numerical Identification of R and L Parameters of High Frequency Multi-winding Transformers

In this paper, equivalent circuits for high frequency multi-winding magnetic components are derived from finite element （FE） computations. Lumped parameter models are first presented, based on previously published work. All parameters of these circuits can be interpreted as the results of open and short-circuit tests on the transformer. Based on this consideration, numerical procedures are then proposed to derive frequency-dependent lumped parameters from FE simulations. By using an adequate formulation, parameters are directly obtained from the FE model degrees of freedom, without performing any volume integration in post-processing, which can be source of numerical errors. In this contribution, attention is paid on the modeling of magnetic coupling using inductances, and dissipative effects （winding and core losses） using resistances. The impact of conductor eddy currents on the circuit parameters is moreover studied in details. Instead of an analysis of the impact conductor eddy currents may have on the circuit parameters is moreover carried through.