The barrier to the copper diffusion is one of the key technologies in copper metallization. A novel barrier has been presented, which is a thin film of silicon oxynitride formed by implanting nitrogen into PECVD silic...The barrier to the copper diffusion is one of the key technologies in copper metallization. A novel barrier has been presented, which is a thin film of silicon oxynitride formed by implanting nitrogen into PECVD silicon dioxide. The method proved highly effective to block the copper diffusion after high frequency C V measurements at different BTS (Bias Thermal Stress) conditions and the XPS (X ray Photoelectron Spectroscopy) analysis. Furthermore, this method has the advantage of simplifying the damascene process of copper metallization, which has also been analyzed and discussed in detail.展开更多
采用CSM C-H J 0.6μm CM O S工艺设计,可用于光纤通信系统中工作速率为622 M b/s的1∶4分接器。分析和设计了分接器的系统结构和单元电路,采用Sm artSp ice进行了仿真。整个电路采用5 V单电源供电,功耗为1.1 W。测试工作速率和各项技...采用CSM C-H J 0.6μm CM O S工艺设计,可用于光纤通信系统中工作速率为622 M b/s的1∶4分接器。分析和设计了分接器的系统结构和单元电路,采用Sm artSp ice进行了仿真。整个电路采用5 V单电源供电,功耗为1.1 W。测试工作速率和各项技术指标达到相应标准。展开更多
介绍了一种半导体照明光源恒流驱动芯片的设计。该芯片采用0.6μm CM O S标准工艺制造,包含有大功率M O SFET、带隙基准源电路、输出缓冲电路和取样反馈控制电路几个主要功能模块,在标准工艺线上实现了功率器件与控制电路的单片集成。...介绍了一种半导体照明光源恒流驱动芯片的设计。该芯片采用0.6μm CM O S标准工艺制造,包含有大功率M O SFET、带隙基准源电路、输出缓冲电路和取样反馈控制电路几个主要功能模块,在标准工艺线上实现了功率器件与控制电路的单片集成。该芯片可为工作电压为3.5 V,工作电流为350 mA的单个半导体照明光源提供恒定的驱动电流。在5 V电源电压有10%跳变的情况下,半导体照明光源的驱动电流的变化可被控制在1.71%以内,而距离光源10 cm处的照度变化仅为1.28%。当环境温度由25°C升高至85°C时,半导体照明光源的驱动电流减小1.14%,而距离光源10 cm处的照度仅减小1.09%。该恒流驱动芯片的电源效率可达63.4%。展开更多
基于标准N阱互补金属氧化物半导体集成电路(CM O S)工艺,设计了P+/N-w e ll/P-sub光电管结构和传统的N+/P-sub光电管结构的有源像素单元。像素单元面积为100μm×100μm,感光面积百分比分别为77.6%和89%,采用了上华0.6μm两层金属...基于标准N阱互补金属氧化物半导体集成电路(CM O S)工艺,设计了P+/N-w e ll/P-sub光电管结构和传统的N+/P-sub光电管结构的有源像素单元。像素单元面积为100μm×100μm,感光面积百分比分别为77.6%和89%,采用了上华0.6μm两层金属两层多晶硅CM O S工艺研制。测试分析结果表明P+/N-w e ll/P-sub结构在暗电流大小,光照响应信号大小,感光灵敏度和感光动态范围上均优于传统的N+/P-sub结构。通过改变复位信号频率,将P+/N-w e ll/P-sub结构像素的感光动态范围提高到139.8 dB,改善了有源像素的感光性能。展开更多
Signals from infrared detector are very weak in SO2 concentration measuring system.In order to improve the sensitivity of detection,combining with filter correlation technology and infrared absorption principle,the we...Signals from infrared detector are very weak in SO2 concentration measuring system.In order to improve the sensitivity of detection,combining with filter correlation technology and infrared absorption principle,the weak signal processing circuit is designed according to correlation detection technology.Under laboratory conditions,system performance of SO2 concentration is tested,and the experimental data are analyzed and processed.Then relationship of SO2 concentration and the measuring voltage is provided to prove that the design improves measuring sensitivity of the system.展开更多
Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for ...Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade offs. The 1.9GHz Complementary Metal Oxide Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.展开更多
介绍了一种可对高频信号进行取样、加权、控制、叠加的模拟信号处理开关集成电路,通过两个高宽长比的高跨导NM O S晶体管可实现权值的粗调和微调。该电路采用标准0.6μm CM O S工艺制造。测试结果表明:该电路的工作频段为50~250 MH z时...介绍了一种可对高频信号进行取样、加权、控制、叠加的模拟信号处理开关集成电路,通过两个高宽长比的高跨导NM O S晶体管可实现权值的粗调和微调。该电路采用标准0.6μm CM O S工艺制造。测试结果表明:该电路的工作频段为50~250 MH z时,导通时最小插入损耗约为-5.0^-10.5 dB,关断时隔离度可达-40.5^-23.4 dB左右;其连续可调的加权动态范围最大值为21.3 dB。展开更多
文摘The barrier to the copper diffusion is one of the key technologies in copper metallization. A novel barrier has been presented, which is a thin film of silicon oxynitride formed by implanting nitrogen into PECVD silicon dioxide. The method proved highly effective to block the copper diffusion after high frequency C V measurements at different BTS (Bias Thermal Stress) conditions and the XPS (X ray Photoelectron Spectroscopy) analysis. Furthermore, this method has the advantage of simplifying the damascene process of copper metallization, which has also been analyzed and discussed in detail.
文摘介绍了一种半导体照明光源恒流驱动芯片的设计。该芯片采用0.6μm CM O S标准工艺制造,包含有大功率M O SFET、带隙基准源电路、输出缓冲电路和取样反馈控制电路几个主要功能模块,在标准工艺线上实现了功率器件与控制电路的单片集成。该芯片可为工作电压为3.5 V,工作电流为350 mA的单个半导体照明光源提供恒定的驱动电流。在5 V电源电压有10%跳变的情况下,半导体照明光源的驱动电流的变化可被控制在1.71%以内,而距离光源10 cm处的照度变化仅为1.28%。当环境温度由25°C升高至85°C时,半导体照明光源的驱动电流减小1.14%,而距离光源10 cm处的照度仅减小1.09%。该恒流驱动芯片的电源效率可达63.4%。
文摘基于标准N阱互补金属氧化物半导体集成电路(CM O S)工艺,设计了P+/N-w e ll/P-sub光电管结构和传统的N+/P-sub光电管结构的有源像素单元。像素单元面积为100μm×100μm,感光面积百分比分别为77.6%和89%,采用了上华0.6μm两层金属两层多晶硅CM O S工艺研制。测试分析结果表明P+/N-w e ll/P-sub结构在暗电流大小,光照响应信号大小,感光灵敏度和感光动态范围上均优于传统的N+/P-sub结构。通过改变复位信号频率,将P+/N-w e ll/P-sub结构像素的感光动态范围提高到139.8 dB,改善了有源像素的感光性能。
文摘Signals from infrared detector are very weak in SO2 concentration measuring system.In order to improve the sensitivity of detection,combining with filter correlation technology and infrared absorption principle,the weak signal processing circuit is designed according to correlation detection technology.Under laboratory conditions,system performance of SO2 concentration is tested,and the experimental data are analyzed and processed.Then relationship of SO2 concentration and the measuring voltage is provided to prove that the design improves measuring sensitivity of the system.
文摘Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade offs. The 1.9GHz Complementary Metal Oxide Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.
文摘介绍了一种可对高频信号进行取样、加权、控制、叠加的模拟信号处理开关集成电路,通过两个高宽长比的高跨导NM O S晶体管可实现权值的粗调和微调。该电路采用标准0.6μm CM O S工艺制造。测试结果表明:该电路的工作频段为50~250 MH z时,导通时最小插入损耗约为-5.0^-10.5 dB,关断时隔离度可达-40.5^-23.4 dB左右;其连续可调的加权动态范围最大值为21.3 dB。
