仪器漏电引起的CMOS电路闩锁

以某整机在调试过程中发生的一只 CMOS 驱动门电路的闩锁失效为例,具体分析了测试仪器感应漏电引起 CMOS 电路闩锁的现象、机理和原因,具有一定的典型性。

Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation

This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor(CMOS) device IDT6116,the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices.The results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit.The demanded minimum interruption duration to avoid latch-up varies with dose rate,and this is confirmed by the experimental results.