The Monte Carlo simulators with the three valley model and the full band Monte Carlo model are used to explore electron transport in bulk wurtzite gallium nitride (GaN).Comparison of the results based on the two mode...The Monte Carlo simulators with the three valley model and the full band Monte Carlo model are used to explore electron transport in bulk wurtzite gallium nitride (GaN).Comparison of the results based on the two models is made.The results based on both models are basically the same at the lower field region,but exhibit some differences at the higher field region.The electron average energy exhibits obvious difference at the high field region between the two models.This difference further causes several other differences of GaN properties,such as the drift velocity versus field characteristics,the repopulation.Because of the complicated energy band structures at the high energy region for wurtzite GaN,the analytical band structures in the three valley model can not cover all properties of the band structures of wurtzite GaN,so the results based on the full band Monte Carlo model should be more exact.展开更多
We explore the electronic and transport properties of zigzag graphene nanoribbons (GNRs) with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combin...We explore the electronic and transport properties of zigzag graphene nanoribbons (GNRs) with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combined with non-equilibrium Green's function technique. We observe robust negative di erential resistance (NDR) effect in all examined molecular junctions. Through analyzing the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of electrodes and the bias-dependent effective coupling between the central molecular orbitals and the electrode subbands are responsible for the observed NDR phenomenon. In addition, the obvious di erence of the transmission spectra of two spin channels is observed in some bias ranges, which leads to the near perfect spin-filtering effect. These theoretical findings imply that GNRs with nitrogenvacancy defects hold great potential for building molecular devices.展开更多
Red mud will flow in paste form under high pressure during pipeline transport.It belongs to a two-phase flow of materials with high viscosity and a high concentration of non-sedimentation,homogeneous solid-liquids.In ...Red mud will flow in paste form under high pressure during pipeline transport.It belongs to a two-phase flow of materials with high viscosity and a high concentration of non-sedimentation,homogeneous solid-liquids.In pipeline transport,its resistance char- acteristics will be influenced by such factors as grain size,velocity,concentration,density, grain composition and pipe diameter etc..With the independently developed small-sized tube-type pressure resistance test facility,studied the resistance characteristics of red mud concerning the three influencing factors,paste concentration,velocity and pipe diameter, which attract the most attention in projects.The fine grain size of the red mud is d_(50)= 13.02μm.According to the experimental results,the pressure loss in transport will in- crease along with the increase of velocity and will fall along with the increase of pipe di- ameter.A 1% difference in paste concentration will result in a 50%~100% difference in pipeline resistance loss.These experimental data is hoped to be direct guidance to the design of high concentration and viscous material pipeline transport system.展开更多
In this paper,we present a review of electron transport properties of magnetic granular films.Magnetic granular films are nanocomposite materials which consist of magnetic nanoparticles embedded in a nonmagnetic matri...In this paper,we present a review of electron transport properties of magnetic granular films.Magnetic granular films are nanocomposite materials which consist of magnetic nanoparticles embedded in a nonmagnetic matrix or assembling of magnetic nanoparticles.According to the style of the nonmagnetic matrix,microstructure and the electron transport mechanism of the films,the magnetic granular films were divided into three groups:(1) magnetic metal-metal granular films,(2) magnetic metal-insulator granular films and(3) magnetic nanocluster-assembled granular films.Moreover,we also systematically review the magnetic properties,transport properties and magnetoresistance effect of size-monodispersed Co and Fe nanocluster-assembled films.展开更多
Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency,tunable transport properties,high elemental abundance and low toxicity.In this review,we sum...Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency,tunable transport properties,high elemental abundance and low toxicity.In this review,we summarize the recent research progress on this large family compounds covering diamond-like chalcogenides and liquid-like Cu2X (X=S,Se,Te)binary compounds as well as their multinary derivatives.These materials have the general features of two sublattices to decouple electron and phonon transport properties.On the one hand,the complex crystal structure and the disordered or even liquid-like sublattice bring about an intrinsically low lattice thermal conductivity.On the other hand, the rigid sublattice constitutes the charge-transport network, maintaining a decent electrical performance.For specific material systems,we demonstrate their unique structural features and outline the structure-performance correlation. Various design strategies including doping,alloying,band engineering and nanostructure architecture,covering nearly all the material scale,are also presented.Finally,the potential of the application of Cu-based chalcogenides as high-performance thermoelectric materials is briefly discussed from material design to device development.展开更多
Compact molecular packing with short π-π stacking and large π-overlap in organic semiconductors is desirable for efficient charge transport and high carrier mobility. Thus charge transport anisotropy along differen...Compact molecular packing with short π-π stacking and large π-overlap in organic semiconductors is desirable for efficient charge transport and high carrier mobility. Thus charge transport anisotropy along different directions is commonly observed in organic semiconductors. Interestingly, in this article, we found that comparable charge transport property were achieved based on the single crystals of a bis-fused tetrathiafulvalene derivative (EM-TTP) compound along two interaction directions, that is, the multiple strong S…S intermolecular interactions and the π-π stacking direction, with the measured electrical conductivity and hole mobility of 0.4 S cm-1, 0.94 cm2 V i s 1 and 0.2 S cm-1, 0.65 cm2 V-1 s-1, respectively. This finding provides us a new molecular design concept for developing novel organic semiconductors with isotropic charge transport property through the synergistic effect of multiple intermolecular interactions (such as π-π interactions) and π-π stacking.展开更多
Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes: The contactless dielectric force microscopy (DFM) technique and the co...Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes: The contactless dielectric force microscopy (DFM) technique and the conventional field-effect transistor (FET) method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.展开更多
The origin of the anomalous transport feature appearing at a conductance G 0.7× (2e2/h) in quasi-lD ballistic devices-the so-called 0.7 anomaly-represents a long standing puzzle. Several mechanisms have been pr...The origin of the anomalous transport feature appearing at a conductance G 0.7× (2e2/h) in quasi-lD ballistic devices-the so-called 0.7 anomaly-represents a long standing puzzle. Several mechanisms have been proposed to explain it, but a general consensus has not been achieved. Proposed explanations have been based on quantum interference, the Kondo effect, Wigner crystallization, and other phenomena. A key open issue is whether the point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-lD constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems.展开更多
We propose a novel molecular junction with single-walled carbon nanotubes as electrodes bridged by a benzene molecule, in which the electrodes are saturated by different terminations (C-, H- and N-). It is found that ...We propose a novel molecular junction with single-walled carbon nanotubes as electrodes bridged by a benzene molecule, in which the electrodes are saturated by different terminations (C-, H- and N-). It is found that the different terminations at the carbon nanotube ends strongly affect the electronic transport properties of the junction. The current-voltage (I-V) curve of the N-terminated carbon nanotube junction shows a more striking nonlinear feature than that of the C- and H-terminated junctions at small bias. Moreover, the negative differential resistance behaviors can be observed significantly in the N-terminated carbon nanotube junction, whereas not in the other two cases.展开更多
文摘The Monte Carlo simulators with the three valley model and the full band Monte Carlo model are used to explore electron transport in bulk wurtzite gallium nitride (GaN).Comparison of the results based on the two models is made.The results based on both models are basically the same at the lower field region,but exhibit some differences at the higher field region.The electron average energy exhibits obvious difference at the high field region between the two models.This difference further causes several other differences of GaN properties,such as the drift velocity versus field characteristics,the repopulation.Because of the complicated energy band structures at the high energy region for wurtzite GaN,the analytical band structures in the three valley model can not cover all properties of the band structures of wurtzite GaN,so the results based on the full band Monte Carlo model should be more exact.
基金This work was partially supported by the National Natural Science Foundation of China (No.20903003 and No.21273208), the Anhui Provincial Natural Science Foundation (No.1408085QB26), the China Postdoctoral Science Foundation (No.2012M511409), the Supercomputer Center of Chinese Academy of Sciences, and University of Science and Technology of China and Shanghai Supercomputer Centers.
文摘We explore the electronic and transport properties of zigzag graphene nanoribbons (GNRs) with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combined with non-equilibrium Green's function technique. We observe robust negative di erential resistance (NDR) effect in all examined molecular junctions. Through analyzing the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of electrodes and the bias-dependent effective coupling between the central molecular orbitals and the electrode subbands are responsible for the observed NDR phenomenon. In addition, the obvious di erence of the transmission spectra of two spin channels is observed in some bias ranges, which leads to the near perfect spin-filtering effect. These theoretical findings imply that GNRs with nitrogenvacancy defects hold great potential for building molecular devices.
基金Science and Technology Corporation Innovation Fund of China(02C26211100199)PH.D Program Fund(20020290011)
文摘Red mud will flow in paste form under high pressure during pipeline transport.It belongs to a two-phase flow of materials with high viscosity and a high concentration of non-sedimentation,homogeneous solid-liquids.In pipeline transport,its resistance char- acteristics will be influenced by such factors as grain size,velocity,concentration,density, grain composition and pipe diameter etc..With the independently developed small-sized tube-type pressure resistance test facility,studied the resistance characteristics of red mud concerning the three influencing factors,paste concentration,velocity and pipe diameter, which attract the most attention in projects.The fine grain size of the red mud is d_(50)= 13.02μm.According to the experimental results,the pressure loss in transport will in- crease along with the increase of velocity and will fall along with the increase of pipe di- ameter.A 1% difference in paste concentration will result in a 50%~100% difference in pipeline resistance loss.These experimental data is hoped to be direct guidance to the design of high concentration and viscous material pipeline transport system.
基金supported by the National Basic Research Program of China (Grant No. 2012CB933103)the National Science Fund for Distinguished Young Scholars (Grant No. 50825101)the National Natural Science Foundation of China (Grant Nos. 50971108 and 51171158)
文摘In this paper,we present a review of electron transport properties of magnetic granular films.Magnetic granular films are nanocomposite materials which consist of magnetic nanoparticles embedded in a nonmagnetic matrix or assembling of magnetic nanoparticles.According to the style of the nonmagnetic matrix,microstructure and the electron transport mechanism of the films,the magnetic granular films were divided into three groups:(1) magnetic metal-metal granular films,(2) magnetic metal-insulator granular films and(3) magnetic nanocluster-assembled granular films.Moreover,we also systematically review the magnetic properties,transport properties and magnetoresistance effect of size-monodispersed Co and Fe nanocluster-assembled films.
基金supported by the National Key Research and Development Program of China (2018YFB0703600)the National Natural Science Foundation of China (51625205)+3 种基金 the Key Research Program of Chinese Academy of Sciences (KFZD-SW-421)Program of Shanghai Subject Chief Scientist (16XD1403900)Youth Innovation Promotion Association, CAS (2016232)Shanghai Sailing Program (18YF1426700).
文摘Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency,tunable transport properties,high elemental abundance and low toxicity.In this review,we summarize the recent research progress on this large family compounds covering diamond-like chalcogenides and liquid-like Cu2X (X=S,Se,Te)binary compounds as well as their multinary derivatives.These materials have the general features of two sublattices to decouple electron and phonon transport properties.On the one hand,the complex crystal structure and the disordered or even liquid-like sublattice bring about an intrinsically low lattice thermal conductivity.On the other hand, the rigid sublattice constitutes the charge-transport network, maintaining a decent electrical performance.For specific material systems,we demonstrate their unique structural features and outline the structure-performance correlation. Various design strategies including doping,alloying,band engineering and nanostructure architecture,covering nearly all the material scale,are also presented.Finally,the potential of the application of Cu-based chalcogenides as high-performance thermoelectric materials is briefly discussed from material design to device development.
基金supported by the Ministry of Science and Technology of China(2016YFB0401100,2013CB933403,2013CB933504)the National Natural Science Foundation of China(51633006,91433115,51222306,91222203,91233205,21472116)+3 种基金Chinese Academy of Sciences(XDB12030300)Beijing NOVA Programmer(Z131101000413038)Beijing Local College Innovation Team Improve Plan(IDHT20140512)Youth Innovation Promotion Association CAS
文摘Compact molecular packing with short π-π stacking and large π-overlap in organic semiconductors is desirable for efficient charge transport and high carrier mobility. Thus charge transport anisotropy along different directions is commonly observed in organic semiconductors. Interestingly, in this article, we found that comparable charge transport property were achieved based on the single crystals of a bis-fused tetrathiafulvalene derivative (EM-TTP) compound along two interaction directions, that is, the multiple strong S…S intermolecular interactions and the π-π stacking direction, with the measured electrical conductivity and hole mobility of 0.4 S cm-1, 0.94 cm2 V i s 1 and 0.2 S cm-1, 0.65 cm2 V-1 s-1, respectively. This finding provides us a new molecular design concept for developing novel organic semiconductors with isotropic charge transport property through the synergistic effect of multiple intermolecular interactions (such as π-π interactions) and π-π stacking.
文摘Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes: The contactless dielectric force microscopy (DFM) technique and the conventional field-effect transistor (FET) method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.
基金This work was supported by the Italian Ministry of Research (Ministero dell'Istruzione, dell'Universitae della Ricerca (MIUR)-Fondo per gli Investimenti della Ricerca di Base (FIRB) project No. RBID08B3FM) and by the Italian Ministry of Foreign Affairs (Ministero degli Affari Esteri, Direzione Generale per la Promozione del Sistema Paese, progetto: Nanoelettronica quantistica per le tecnologie delle informazioni). Two of us (C.R. and W.W.) thank the Swiss National Science Foundation (SNSF) financial support.
文摘The origin of the anomalous transport feature appearing at a conductance G 0.7× (2e2/h) in quasi-lD ballistic devices-the so-called 0.7 anomaly-represents a long standing puzzle. Several mechanisms have been proposed to explain it, but a general consensus has not been achieved. Proposed explanations have been based on quantum interference, the Kondo effect, Wigner crystallization, and other phenomena. A key open issue is whether the point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-lD constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems.
基金supported by the Natural Science Foundation of Shandong Province of China (Grant Nos. ZR2009AL004 and ZR2010AM037)
文摘We propose a novel molecular junction with single-walled carbon nanotubes as electrodes bridged by a benzene molecule, in which the electrodes are saturated by different terminations (C-, H- and N-). It is found that the different terminations at the carbon nanotube ends strongly affect the electronic transport properties of the junction. The current-voltage (I-V) curve of the N-terminated carbon nanotube junction shows a more striking nonlinear feature than that of the C- and H-terminated junctions at small bias. Moreover, the negative differential resistance behaviors can be observed significantly in the N-terminated carbon nanotube junction, whereas not in the other two cases.