Titanium aluminum nitride （TiAlN） film, as a possible substitute for the conventional tantalum nitride （TAN） or tantalum-aluminum （TaAl） heater resistor in inkjet printheads, was deposited on a Si（100） substra...Titanium aluminum nitride （TiAlN） film, as a possible substitute for the conventional tantalum nitride （TAN） or tantalum-aluminum （TaAl） heater resistor in inkjet printheads, was deposited on a Si（100） substrate at 400 ℃ by radio frequency （RF） magnetron co-sputtering using titanium nitride （TIN） and aluminum nitride （AlN） as ceramic targets. The temperature coefficient of resistivity （TCR） and oxidation resistance, which are the most important properties of a heat resistor, were studied depending on the plasma power density applied during sputtering. With the increasing plasma power density, the crystallinity, grain size and surface roughness of the applied film increased, resulting in less grain boundaries with large grains. The Ti, Al and N binding energies obtained from X-ray photoelectron spectroscopy analysis disclosed the nitrogen deficit in the TiAlN stoichiometry that makes the films more electrically resistive. The highest oxidation resistance and the lowest TCR of-765.43×10^-6 K-l were obtained by applying the highest plasma power density.展开更多
The low resistance PTC ceramic thermistor material with excellent eleectricalproperties are successfully fabricated by raw materials at industrial range made in our country onthe study of its composition expression an...The low resistance PTC ceramic thermistor material with excellent eleectricalproperties are successfully fabricated by raw materials at industrial range made in our country onthe study of its composition expression and fabrication process by using the addition of Nb, La, Y,Ta , microstructure regulator BN and ASTL phase . The composition and its fabrication method arestudied. The relation of electrical properties of the PTC ceramic material to its compositionexpression and its related electrical properties are discussed展开更多
High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than...High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...展开更多
基金Project (M-2009-01-0029) supported by Fundamental R&D Program for Core Technology of Materials, Korea
文摘Titanium aluminum nitride （TiAlN） film, as a possible substitute for the conventional tantalum nitride （TAN） or tantalum-aluminum （TaAl） heater resistor in inkjet printheads, was deposited on a Si（100） substrate at 400 ℃ by radio frequency （RF） magnetron co-sputtering using titanium nitride （TIN） and aluminum nitride （AlN） as ceramic targets. The temperature coefficient of resistivity （TCR） and oxidation resistance, which are the most important properties of a heat resistor, were studied depending on the plasma power density applied during sputtering. With the increasing plasma power density, the crystallinity, grain size and surface roughness of the applied film increased, resulting in less grain boundaries with large grains. The Ti, Al and N binding energies obtained from X-ray photoelectron spectroscopy analysis disclosed the nitrogen deficit in the TiAlN stoichiometry that makes the films more electrically resistive. The highest oxidation resistance and the lowest TCR of-765.43×10^-6 K-l were obtained by applying the highest plasma power density.
文摘The low resistance PTC ceramic thermistor material with excellent eleectricalproperties are successfully fabricated by raw materials at industrial range made in our country onthe study of its composition expression and fabrication process by using the addition of Nb, La, Y,Ta , microstructure regulator BN and ASTL phase . The composition and its fabrication method arestudied. The relation of electrical properties of the PTC ceramic material to its compositionexpression and its related electrical properties are discussed
基金Supported by Science and Technology Committee of Tianjin (No.06YFGPGX08400)Ministry of Science and Technology of China (No.2009GJF20022)Innovation Fund of Tianjin University
文摘High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...
