Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decompos...Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO_2/Ta interface:37Ta+15SiO_2=5Ta_5Si_3+6Ta_2O_5.The more stable products Ta_5Si_3 and Ta_2O_5 may be beneficial to stop the diffusion of Cu into SiO_2.展开更多
Powder mixture of pure Al and oxidized Si C was consolidated into 10%（mass fraction） Si Cp/Al composites at 250 °C by equal channel angular pressing and torsion（ECAP-T）. The valence states of Si for Si C part...Powder mixture of pure Al and oxidized Si C was consolidated into 10%（mass fraction） Si Cp/Al composites at 250 °C by equal channel angular pressing and torsion（ECAP-T）. The valence states of Si for Si C particulates and Al for the as-consolidated composites were detected by X-ray photoelectron spectroscopy（XPS）. The interfacial bondings of the composites were characterized by scanning electron microscopy（SEM）. The elements at the interface were linearly scanned by energy dispersive spectroscopy（EDS） and the EDS mappings of Si and Al were also obtained. The values of the nanohardness at different positions within 2 μm from the boundary of Si C particulate were measured. The results show that after ECAP-T, interfacial reaction which inhibits injurious interfacial phase occurs between Al and the oxide layer of Si C, and the element interdiffusion which can enhance interfacial bonding exists between Al and Si C. As ECAP-T passes increase, the reaction degree is intensified and the element interdiffusion layer is thickened, leading to the more smooth transition of the hardness from Si C to Al.展开更多
文摘Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO_2/Ta interface:37Ta+15SiO_2=5Ta_5Si_3+6Ta_2O_5.The more stable products Ta_5Si_3 and Ta_2O_5 may be beneficial to stop the diffusion of Cu into SiO_2.
基金Project(51175138)supported by the National Natural Science Foundation of ChinaProjects(2012HGZX0030,2013HGCH0011)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(20100111110003)supported by the Specialized Research Fund for the Doctoral Program of Higher Education,China
文摘Powder mixture of pure Al and oxidized Si C was consolidated into 10%（mass fraction） Si Cp/Al composites at 250 °C by equal channel angular pressing and torsion（ECAP-T）. The valence states of Si for Si C particulates and Al for the as-consolidated composites were detected by X-ray photoelectron spectroscopy（XPS）. The interfacial bondings of the composites were characterized by scanning electron microscopy（SEM）. The elements at the interface were linearly scanned by energy dispersive spectroscopy（EDS） and the EDS mappings of Si and Al were also obtained. The values of the nanohardness at different positions within 2 μm from the boundary of Si C particulate were measured. The results show that after ECAP-T, interfacial reaction which inhibits injurious interfacial phase occurs between Al and the oxide layer of Si C, and the element interdiffusion which can enhance interfacial bonding exists between Al and Si C. As ECAP-T passes increase, the reaction degree is intensified and the element interdiffusion layer is thickened, leading to the more smooth transition of the hardness from Si C to Al.
