By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation for polarization vector, electron-IO phonon F^6hlich interaction Hamiltonian, the dispersion relation, and the electron-p...By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation for polarization vector, electron-IO phonon F^6hlich interaction Hamiltonian, the dispersion relation, and the electron-phonon coupling function in an arbitrary layer-number quantum well system have been derived and investigated within the framework of dielectric continuum approximation. Numerical calculation on seven-layer AlxGal-xAs/GaAs systems have been performed. Via the numerical results in this work and previous works, the general characters of the IO phonon modes in an n-layer coupling quantum well system were concluded and summarized. This work can be regarded as a generalization of previous works on IO phonon modes in some fLxed layer-number quantum well systems, and it provides a uniform method to investittate the effects of IO phonons on the multi-layer coupling quantum well systems.展开更多
The interaction between exciton and confined longitudinal optical （LO） phonons, interface optical （IO） phonons in an asymmetric Ga1-xAlxAsIGaAslGao.TAlo.3As square quantum well is investigated. By applying the LLP...The interaction between exciton and confined longitudinal optical （LO） phonons, interface optical （IO） phonons in an asymmetric Ga1-xAlxAsIGaAslGao.TAlo.3As square quantum well is investigated. By applying the LLP-like transformation and variational approach, the numerical results are obtained as functions of the well width and asymmetric-degree of well. The exciton-optical phonons interaction-energy has a minimum value with the increase of the well width. It is demonstrated that the LO-phonon energy-contribution increases while the IO-phonon contribution decreases as the well width increases gradually. The energy-contribution of LO-phonon in symmetric and asymmetric square quantum well does not have too much difference, but the IO-phonon contribution varies apparently. The exciton binding-energy monotonically decreases with the increase of the well width and is proportional to the left-barrier height.展开更多
文摘By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation for polarization vector, electron-IO phonon F^6hlich interaction Hamiltonian, the dispersion relation, and the electron-phonon coupling function in an arbitrary layer-number quantum well system have been derived and investigated within the framework of dielectric continuum approximation. Numerical calculation on seven-layer AlxGal-xAs/GaAs systems have been performed. Via the numerical results in this work and previous works, the general characters of the IO phonon modes in an n-layer coupling quantum well system were concluded and summarized. This work can be regarded as a generalization of previous works on IO phonon modes in some fLxed layer-number quantum well systems, and it provides a uniform method to investittate the effects of IO phonons on the multi-layer coupling quantum well systems.
基金supported by the National Natural Science Foundation of China (Grant No. 10574011)
文摘The interaction between exciton and confined longitudinal optical （LO） phonons, interface optical （IO） phonons in an asymmetric Ga1-xAlxAsIGaAslGao.TAlo.3As square quantum well is investigated. By applying the LLP-like transformation and variational approach, the numerical results are obtained as functions of the well width and asymmetric-degree of well. The exciton-optical phonons interaction-energy has a minimum value with the increase of the well width. It is demonstrated that the LO-phonon energy-contribution increases while the IO-phonon contribution decreases as the well width increases gradually. The energy-contribution of LO-phonon in symmetric and asymmetric square quantum well does not have too much difference, but the IO-phonon contribution varies apparently. The exciton binding-energy monotonically decreases with the increase of the well width and is proportional to the left-barrier height.
