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基于不同AlN钝化层的极性GaN MOS器件界面特性 被引量:1
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作者 高森 武娴 +1 位作者 肖磊 王敬 《半导体技术》 CAS 北大核心 2021年第9期690-693,738,共5页
界面质量是影响GaN MOS器件性能以及可靠性的主要因素之一,Al2O3栅介质与极性GaN界面间插入超薄非晶AlN作为钝化层可以有效改善GaN栅界面特性,针对AlN钝化层生长方式研究了GaN界面优化特性。通过GaN MOS电容的C-V和J-V特性,结合透射电... 界面质量是影响GaN MOS器件性能以及可靠性的主要因素之一,Al2O3栅介质与极性GaN界面间插入超薄非晶AlN作为钝化层可以有效改善GaN栅界面特性,针对AlN钝化层生长方式研究了GaN界面优化特性。通过GaN MOS电容的C-V和J-V特性,结合透射电子显微镜(TEM)表征分析,对比了不同生长条件的AlN插入层对GaN MOS电容的界面特性的影响。相比常规热生长AlN钝化层制备的样品,以等离子体NH3为N源在300℃下生长AlN钝化层制备的GaN MOS电容的频散和滞回特性均得到显著改善,界面态密度也略有改善。分析认为,经过等离子体NH3的轰击作用有效地抑制了GaN表面上Ga—O键的形成,在GaN表面直接生长AlN,从而改善了界面特性。 展开更多
关键词 GaN MOS电容 AlN钝化层 界面态分析 等离子体NH3 C-V特性
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Non-equilibrium thermodynamics analysis and its application in interfacial mass transfer 被引量:8
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作者 LU XIaoHua JI YuanHui LIU HongLai 《Science China Chemistry》 SCIE EI CAS 2011年第10期1659-1666,共8页
Interfacial transfer plays an important role in multi-phase chemical processes. However, it is difficult to describe the complex interfacial transport behavior by the traditional mass transfer model. In this paper, we... Interfacial transfer plays an important role in multi-phase chemical processes. However, it is difficult to describe the complex interfacial transport behavior by the traditional mass transfer model. In this paper, we describe an interfacial mass transfer model based on linear non-equilibrium thermodynamics for the analysis of the rate of interfacial transport. The interfacial transfer process rate J depends on the interface mass transfer coefficient K, interfacial area A and chemical potential gradient at the interface. Potassium compounds were selected as model systems. A model based on linear non-equilibrium thermo-dynamics was established in order to describe and predict the transport rate at the solid-solution interface. Together with accurate experimental kinetic data for potassium ions obtained using ion-selective electrodes, a general model which can be used to describe the dissolution rate was established and used to analyze ways of improving the process rate. 展开更多
关键词 chemical engineering non-equilibrium thermodynamics interface transport process rate
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