The hot carrier effects under off- state stress m ode( Vgs=0 ,Vds<0 ) have been investigated on9nm P- MOSFETs with channel length varying from1.0 2 5 μm to0 .5 2 5 μm.Both on- and off- state currents are discuss...The hot carrier effects under off- state stress m ode( Vgs=0 ,Vds<0 ) have been investigated on9nm P- MOSFETs with channel length varying from1.0 2 5 μm to0 .5 2 5 μm.Both on- and off- state currents are discussed. It is found that the off- state leakage current decreases after a higher voltage stressing,which is induced by the charge injection occurred close to the drain junction.However,the leakage current increases after a lower voltage stressing because of the newly generated interface traps.It is also found that the on state saturation current and threshold voltage degrade significantly with the stress tim e,which we believe is due to the charges injected near the gate- drain overlapping region and/ or the stress- induced interface trap generation.The degradation of Idsatcan be ex- pressed as a function of the product of the gate current( Ig) and the num ber of charges injected into the gate oxide ( Qinj) in a simple power law.Finally,a lifetime prediction model based on the degradation of Idsatis proposed.展开更多
A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degr...A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.展开更多
文摘The hot carrier effects under off- state stress m ode( Vgs=0 ,Vds<0 ) have been investigated on9nm P- MOSFETs with channel length varying from1.0 2 5 μm to0 .5 2 5 μm.Both on- and off- state currents are discussed. It is found that the off- state leakage current decreases after a higher voltage stressing,which is induced by the charge injection occurred close to the drain junction.However,the leakage current increases after a lower voltage stressing because of the newly generated interface traps.It is also found that the on state saturation current and threshold voltage degrade significantly with the stress tim e,which we believe is due to the charges injected near the gate- drain overlapping region and/ or the stress- induced interface trap generation.The degradation of Idsatcan be ex- pressed as a function of the product of the gate current( Ig) and the num ber of charges injected into the gate oxide ( Qinj) in a simple power law.Finally,a lifetime prediction model based on the degradation of Idsatis proposed.
文摘A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.
