The degradation of device parameters and the degradation of the stress induced leakage current （SILC） of thin tunnel gate oxide under constant direct-tunneling voltage stress are studied using nMOS and pMOSFETs with...The degradation of device parameters and the degradation of the stress induced leakage current （SILC） of thin tunnel gate oxide under constant direct-tunneling voltage stress are studied using nMOS and pMOSFETs with 1. 4nm gate oxides. Experimental results show that there is a linear correlation between the degradation of the SILC and the degradation of Vth in MOSFETs during different direct-tunneling （DT） stresses. A model of tunneling assisted by interface traps and oxide trapped positive charges is developed to explain the origin of SILC during DT stress.展开更多
基金the National Natural Science Foundation of China(Nos.60736033,60506020)~~
文摘The degradation of device parameters and the degradation of the stress induced leakage current （SILC） of thin tunnel gate oxide under constant direct-tunneling voltage stress are studied using nMOS and pMOSFETs with 1. 4nm gate oxides. Experimental results show that there is a linear correlation between the degradation of the SILC and the degradation of Vth in MOSFETs during different direct-tunneling （DT） stresses. A model of tunneling assisted by interface traps and oxide trapped positive charges is developed to explain the origin of SILC during DT stress.
