In this study,innovative ellipsoid pellet with craters on its surface was designed,and the direct reduction process was compared with ellipsoid(without craters)and sphere pellets.In addition,furnace temperature and un...In this study,innovative ellipsoid pellet with craters on its surface was designed,and the direct reduction process was compared with ellipsoid(without craters)and sphere pellets.In addition,furnace temperature and uneven heat flux density effects on the pellet direct reduction process were also studied.The results show that ellipsoid pellet is better than that of spherical pellet on metallization ratio.However,under the condition of non-uniform heat flow,the ellipsoid pellet final metallization rate and zinc removal rate were lower.Although the heat transfer effect of ellipsoid pellet with craters was not improved significantly,the metallization rate and zinc removal rate were found improved,which will have a cumulative effect on the pellets direct reduction process in rotary hearth furnace.Under varying furnace temperature conditions,the pellet temperature was higher than that of the constant furnace temperature.After 1200 s,pellet Fe concentration increased to 123.6%,metallization rate and zinc removal rate increased to 113.7%and 102.2%,respectively.These results can provide references for the carbon-containing pellet design used in rotary hearth furnace.展开更多
As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the mo...As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.展开更多
基金Project(cstc 2018 jszx-cyzdx 0100)supported by the Chongqing Technology Innovation and Application Demonstration Project,China。
文摘In this study,innovative ellipsoid pellet with craters on its surface was designed,and the direct reduction process was compared with ellipsoid(without craters)and sphere pellets.In addition,furnace temperature and uneven heat flux density effects on the pellet direct reduction process were also studied.The results show that ellipsoid pellet is better than that of spherical pellet on metallization ratio.However,under the condition of non-uniform heat flow,the ellipsoid pellet final metallization rate and zinc removal rate were lower.Although the heat transfer effect of ellipsoid pellet with craters was not improved significantly,the metallization rate and zinc removal rate were found improved,which will have a cumulative effect on the pellets direct reduction process in rotary hearth furnace.Under varying furnace temperature conditions,the pellet temperature was higher than that of the constant furnace temperature.After 1200 s,pellet Fe concentration increased to 123.6%,metallization rate and zinc removal rate increased to 113.7%and 102.2%,respectively.These results can provide references for the carbon-containing pellet design used in rotary hearth furnace.
基金Project(61074051)supported by the National Natural Science Foundation of ChinaProject(10C0709)supported by the Scientific Research Fund of Education Department of Hunan Province,ChinaProject(2011GK3058)supported by the Science and Technology Plan of Hunan Province,China
文摘As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.
