The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to...The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC tank.The proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the pads.Measured results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 GHz.The measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the carrier.The maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply.展开更多
A fully integrated integer-N frequency synthesizer is implemented.The synthesizer is designed for low intermediate frequency （IF）ZigBee transceiver applications.Techniques used to make the loop bandwidth constant ac...A fully integrated integer-N frequency synthesizer is implemented.The synthesizer is designed for low intermediate frequency （IF）ZigBee transceiver applications.Techniques used to make the loop bandwidth constant across the whole output frequency range of the voltage controlled oscillator（VCO）are adopted to maintain phase noise optimization and loop stability.In-phase and quadrature（IQ）signals are generated by a 1/2 frequency divider at the output of the VCO.The synthesizer is fabricated in 0.18 μm radio frequency（RF） complementary metal oxide semiconductor transistor （CMOS）technology.The chip area is 1.7 mm2.The synthesizer is measured on wafer.It consumes totally 28.8 mW excluding output buffers from a supply voltage of 1.8 V.The measured phase noise is -110 and -122 dBc/Hz at the offset of 1 and 3 MHz from a 2.405 GHz carrier,respectively.The measured reference spur at a 2 MHz offset from a 2.405 GHz carrier is-48.2 dBc.The measured setting time of the synthesizer is about 160 μs.展开更多
文摘The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC tank.The proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the pads.Measured results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 GHz.The measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the carrier.The maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply.
基金The National High Technology Research and Development Program of China (863 Program)(No.2007AA01Z2A7)the Scienceand Technology Program of Zhejiang Province (No.2008C16017)
文摘A fully integrated integer-N frequency synthesizer is implemented.The synthesizer is designed for low intermediate frequency （IF）ZigBee transceiver applications.Techniques used to make the loop bandwidth constant across the whole output frequency range of the voltage controlled oscillator（VCO）are adopted to maintain phase noise optimization and loop stability.In-phase and quadrature（IQ）signals are generated by a 1/2 frequency divider at the output of the VCO.The synthesizer is fabricated in 0.18 μm radio frequency（RF） complementary metal oxide semiconductor transistor （CMOS）technology.The chip area is 1.7 mm2.The synthesizer is measured on wafer.It consumes totally 28.8 mW excluding output buffers from a supply voltage of 1.8 V.The measured phase noise is -110 and -122 dBc/Hz at the offset of 1 and 3 MHz from a 2.405 GHz carrier,respectively.The measured reference spur at a 2 MHz offset from a 2.405 GHz carrier is-48.2 dBc.The measured setting time of the synthesizer is about 160 μs.
