In order to effectively control the working state of the gyroscope in drive mode, the drive characteristics of the micro electromechanical system (MEMS) gyroscope are analyzed in principle. A novel drive circuit for...In order to effectively control the working state of the gyroscope in drive mode, the drive characteristics of the micro electromechanical system (MEMS) gyroscope are analyzed in principle. A novel drive circuit for the MEMS gyroscope in digital closed-loop control is proposed, which utilizes a digital phase-locked loop (PLL) in frequency control and an automatic gain control (AGC) method in amplitude control. A digital processing circuit with a field programmable gate array (FPGA) is designed and the experiments are carried out. The results indicate that when the temperature changes, the drive frequency can automatically track the resonant frequency of gyroscope in drive mode and that of the oscillating amplitude holds at a set value. And at room temperature, the relative deviation of the drive frequency is 0.624 ×10^-6 and the oscillating amplitude is 8.0 ×10^-6, which are 0. 094% and 18. 39% of the analog control program, respectively. Therefore, the control solution of the digital PLL in frequency and the AGC in amplitude is feasible.展开更多
A 37. 5 MHz differential complementary metal oxide semiconductor (CMOS) crystal oscillator with low power and low phase noise for the radio frequency tuner of digital radio broadcasting digital radio mondiale (DRAM...A 37. 5 MHz differential complementary metal oxide semiconductor (CMOS) crystal oscillator with low power and low phase noise for the radio frequency tuner of digital radio broadcasting digital radio mondiale (DRAM) and digital audio broadcasting (DAB) systems is realized and characterized. The conventional cross-coupled n-type metal oxide semiconductor (NMOS) transistors are replaced by p-type metal oxide semiconductor (PMOS) transistors to decrease the phase noise in the core part of the crystal oscillator. A symmetry structure of the current mirror is adopted to increase the stability of direct current. The amplitude detecting circuit made up of a single- stage CMOS operational transconductance amplifier (OTA) and a simple amplitude detector is used to improve the current accuracy of the output signals. The chip is fabricated in a 0. 18- pxn CMOS process, and the total chip size is 0. 35 mm x 0. 3 mm. Under a supply voltage of 1.8 V, the measured power consumption is 3.6 mW including the output buffer for 50 testing loads. The proposed crystal oscillator exhibits a low phase noise of - 134. 7 dBc/Hz at 1-kHz offset from the center frequency of 37. 5 MHz.展开更多
A design and implementation for a 2.4GHz quadrature output frequency synthesizer intended for bluetooth in 0. 35μm CMOS technology are presented. A differentially controlled quadrature voltage-controlled oscillator ...A design and implementation for a 2.4GHz quadrature output frequency synthesizer intended for bluetooth in 0. 35μm CMOS technology are presented. A differentially controlled quadrature voltage-controlled oscillator (QVCO) is employed to generate quadrature (I/Q) signals. A second-order loop filter, with a unit gain transconductance amplifier having the performance of a third-order loop filter,is exploited for low cost. The measured spot phase noise is -106.15dBc/Hz@ 1MHz. Close-in phase noise is less than -70dBc/Hz. The synthesizer consumes 13.5mA under a 3.3V voltage supply. The core size is 1.3mm×0. 8mm.展开更多
A fast-locking, low-jitter, phase-locked loop (PLL) with a simple phase-frequency detector is proposed. The phase-frequency detector is composed of only two XOR gates. It simultaneously achieves low jitter and short...A fast-locking, low-jitter, phase-locked loop (PLL) with a simple phase-frequency detector is proposed. The phase-frequency detector is composed of only two XOR gates. It simultaneously achieves low jitter and short locking time. The voltage-controlled oscillator within the PLL consists of four-stage ring oscillators which are coupled to each other and oscillate with the same frequency and a phase shift of 45. The PLL is fabricated in 0. 1Stem CMOS technology. The measured phase noise of the PLL output at 500kHz offset from the 5GHz center frequency is - 102.6dBc/Hz. The circuit exhibits a capture range of 280MHz and a low RMS jitter of 2.06ps. The power dissipation excluding the output buffers is only 21.6roW at a 1.8V supply.展开更多
A low jitter phase-locked loop (PLL) that does not need analog resistors and capacitors is designed and fabrica- ted in a 90nm CMOS digital process. The metal parasitic capacitor is used in the PLL loop filter. Test...A low jitter phase-locked loop (PLL) that does not need analog resistors and capacitors is designed and fabrica- ted in a 90nm CMOS digital process. The metal parasitic capacitor is used in the PLL loop filter. Test results show that when the PLL is locked on 1. 989GHz, the RMS jitter is 3. 7977ps, the peak-to-peak jitter is 31. 225ps, and the power con- sumption is about 9mW. The locked output frequency range is from 125MHz to 2.7GHz.展开更多
A wideband LC cross-coupled voltage controlled oscillator(VCO) is designed and realized with standard 0. 18 μm complementary metal-oxide-semiconductor(CMOS) technology. Band switching capacitors are adopted to ex...A wideband LC cross-coupled voltage controlled oscillator(VCO) is designed and realized with standard 0. 18 μm complementary metal-oxide-semiconductor(CMOS) technology. Band switching capacitors are adopted to extend the frequency tuning range, and the phase noise is optimized in the design procedure. The functional relationships between the phase noise and the transistors' width-length ratios are deduced by a linear time variant (LTV) model. The theoretical optimized parameter value ranges are determined. To simplify the calculation, the working region is split into several sub-ranges according to transistor working conditions. Thus, a lot of integrations are avoided, and the phase noise function upon the design variables can be expressed as simple proportion formats. Test results show that the DC current is 8.8 mA under a voltage supply of 1.8 V; the frequency range is 1.17 to 1.90 GHz, and the phase noise reaches - 83 dBc/Hz at a 10 kHz offset from the carrier. The chip size is 1. 2 mm × 0. 9 mm.展开更多
In order to make a 10 Gbit/s 2:1 half-rate multiplexer operate without external clocks, a 5 Gbit/s clock recovery (CR) circuit is needed to extract the desired clock from one input data. For the CR circuit, a 3-sta...In order to make a 10 Gbit/s 2:1 half-rate multiplexer operate without external clocks, a 5 Gbit/s clock recovery (CR) circuit is needed to extract the desired clock from one input data. For the CR circuit, a 3-stage ring voltage-controlled oscillator (VCO) is employed to avoid an unreliable startup of a 2-stage VCO and a low oscillation frequency of a 4-stage VCO. A phase frequency detector (PFD) is used to expand the pull-in range to meet the wide tuning range of a VCO required by process-voltage-temperature (PVT) variation. SMIC 0. 18-μm CMOS technology is adopted and the core area is 170 μm ×270 μm. Measurements show that, under a 1.8 V supply voltage, it consumes only about 90 mW, and has an input sensitivity of less than 25 mV, an output single-ended swing of above 300 mV, a phase noise of - 114 dBc/Hz at 1 MHz offset and a pull-in range of 1 GHz.展开更多
A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0.18μm CMOS process. The VCO has a 16.15% tuning range (from 1. 8998 to 2. 2335GHz) through a combination of analog and digital tun...A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0.18μm CMOS process. The VCO has a 16.15% tuning range (from 1. 8998 to 2. 2335GHz) through a combination of analog and digital tuning techniques (4-bit binary switch-capacitor array). The measured phase noise is - 118.17dBc/Hz at a 1MHz offset from a 2. 158GHz carrier. With the presented improved switch,the phase noise varies no more than 3dB at different digital control bits. The phase noise changes only by about 2dB in the tuning range because of the pn-junctions as the varactors. The VCO draws a current of about 2. lmA from a 1.8V power supply and works normally with a 1.5V power supply.展开更多
A low phase noise quadrature oscillator using the new injection locked technique is proposed. The incident signal is directly injected into the common-source connection of the sub-harmonic oscillator. In principle, th...A low phase noise quadrature oscillator using the new injection locked technique is proposed. The incident signal is directly injected into the common-source connection of the sub-harmonic oscillator. In principle, the phase noise performance of the quadrature output is better than the sub-harmonic oscillator itself. The quadrature oscillator is implemented in a 0. 25μm CMOS process. Measurements show the proposed oscillator could achieve a phase noise of --130dBc/Hz at 1MHz offset from 1. 13GHz carrier while only drawing an 8.0mA current from the 2.5V power supply.展开更多
This paper introduces a 2.5GHz low phase-noise cross-coupled LC-VCO realized in 0.35μm SiGe BiCMOS technology. The conventional definition of a VCO operating regime is revised from a new perspective. Analysis shows t...This paper introduces a 2.5GHz low phase-noise cross-coupled LC-VCO realized in 0.35μm SiGe BiCMOS technology. The conventional definition of a VCO operating regime is revised from a new perspective. Analysis shows the importance of inductance and bias current selection for oscillator phase noise optimization. Differences between CMOS and BJT VCO design strategy are then analyzed and the conclusions are summarized. In this implementation, bonding wires form the resonator to improve the phase noise performance. The VCO is then integrated with other components to form a PLL frequency synthesizer with a loop bandwidth of 30kHz. Measurement shows a phase noise of - 95dBc/Hz at 100kHz offset and - 116dBc/Hz at 1MHz offset from a 2.5GHz carrier. At a supply voltage of 3V, the VCO core consumes 8mA. To our knowledge,this is the first differential cross-coupled VCO in SiGe BiCMOS technology in China.展开更多
基金The National Natural Science Foundation of China(No. 60974116 )the Research Fund of Aeronautics Science (No.20090869007)Specialized Research Fund for the Doctoral Program of Higher Education (No. 200902861063)
文摘In order to effectively control the working state of the gyroscope in drive mode, the drive characteristics of the micro electromechanical system (MEMS) gyroscope are analyzed in principle. A novel drive circuit for the MEMS gyroscope in digital closed-loop control is proposed, which utilizes a digital phase-locked loop (PLL) in frequency control and an automatic gain control (AGC) method in amplitude control. A digital processing circuit with a field programmable gate array (FPGA) is designed and the experiments are carried out. The results indicate that when the temperature changes, the drive frequency can automatically track the resonant frequency of gyroscope in drive mode and that of the oscillating amplitude holds at a set value. And at room temperature, the relative deviation of the drive frequency is 0.624 ×10^-6 and the oscillating amplitude is 8.0 ×10^-6, which are 0. 094% and 18. 39% of the analog control program, respectively. Therefore, the control solution of the digital PLL in frequency and the AGC in amplitude is feasible.
基金The National Natural Science Foundation of China(No. 61106024)the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20090092120012)the Science and Technology Program of South east University (No. KJ2010402)
文摘A 37. 5 MHz differential complementary metal oxide semiconductor (CMOS) crystal oscillator with low power and low phase noise for the radio frequency tuner of digital radio broadcasting digital radio mondiale (DRAM) and digital audio broadcasting (DAB) systems is realized and characterized. The conventional cross-coupled n-type metal oxide semiconductor (NMOS) transistors are replaced by p-type metal oxide semiconductor (PMOS) transistors to decrease the phase noise in the core part of the crystal oscillator. A symmetry structure of the current mirror is adopted to increase the stability of direct current. The amplitude detecting circuit made up of a single- stage CMOS operational transconductance amplifier (OTA) and a simple amplitude detector is used to improve the current accuracy of the output signals. The chip is fabricated in a 0. 18- pxn CMOS process, and the total chip size is 0. 35 mm x 0. 3 mm. Under a supply voltage of 1.8 V, the measured power consumption is 3.6 mW including the output buffer for 50 testing loads. The proposed crystal oscillator exhibits a low phase noise of - 134. 7 dBc/Hz at 1-kHz offset from the center frequency of 37. 5 MHz.
文摘A design and implementation for a 2.4GHz quadrature output frequency synthesizer intended for bluetooth in 0. 35μm CMOS technology are presented. A differentially controlled quadrature voltage-controlled oscillator (QVCO) is employed to generate quadrature (I/Q) signals. A second-order loop filter, with a unit gain transconductance amplifier having the performance of a third-order loop filter,is exploited for low cost. The measured spot phase noise is -106.15dBc/Hz@ 1MHz. Close-in phase noise is less than -70dBc/Hz. The synthesizer consumes 13.5mA under a 3.3V voltage supply. The core size is 1.3mm×0. 8mm.
文摘A fast-locking, low-jitter, phase-locked loop (PLL) with a simple phase-frequency detector is proposed. The phase-frequency detector is composed of only two XOR gates. It simultaneously achieves low jitter and short locking time. The voltage-controlled oscillator within the PLL consists of four-stage ring oscillators which are coupled to each other and oscillate with the same frequency and a phase shift of 45. The PLL is fabricated in 0. 1Stem CMOS technology. The measured phase noise of the PLL output at 500kHz offset from the 5GHz center frequency is - 102.6dBc/Hz. The circuit exhibits a capture range of 280MHz and a low RMS jitter of 2.06ps. The power dissipation excluding the output buffers is only 21.6roW at a 1.8V supply.
文摘A low jitter phase-locked loop (PLL) that does not need analog resistors and capacitors is designed and fabrica- ted in a 90nm CMOS digital process. The metal parasitic capacitor is used in the PLL loop filter. Test results show that when the PLL is locked on 1. 989GHz, the RMS jitter is 3. 7977ps, the peak-to-peak jitter is 31. 225ps, and the power con- sumption is about 9mW. The locked output frequency range is from 125MHz to 2.7GHz.
文摘A wideband LC cross-coupled voltage controlled oscillator(VCO) is designed and realized with standard 0. 18 μm complementary metal-oxide-semiconductor(CMOS) technology. Band switching capacitors are adopted to extend the frequency tuning range, and the phase noise is optimized in the design procedure. The functional relationships between the phase noise and the transistors' width-length ratios are deduced by a linear time variant (LTV) model. The theoretical optimized parameter value ranges are determined. To simplify the calculation, the working region is split into several sub-ranges according to transistor working conditions. Thus, a lot of integrations are avoided, and the phase noise function upon the design variables can be expressed as simple proportion formats. Test results show that the DC current is 8.8 mA under a voltage supply of 1.8 V; the frequency range is 1.17 to 1.90 GHz, and the phase noise reaches - 83 dBc/Hz at a 10 kHz offset from the carrier. The chip size is 1. 2 mm × 0. 9 mm.
基金The National High Technology Research and Development Program of China (863 Program)(No. 2007AA01Z2a5)the National Natural Science Foundation of China (No. 60806027,61076073)Specialized Research Fund for the Doctoral Program of Higher Education (No.20090092120012)
文摘In order to make a 10 Gbit/s 2:1 half-rate multiplexer operate without external clocks, a 5 Gbit/s clock recovery (CR) circuit is needed to extract the desired clock from one input data. For the CR circuit, a 3-stage ring voltage-controlled oscillator (VCO) is employed to avoid an unreliable startup of a 2-stage VCO and a low oscillation frequency of a 4-stage VCO. A phase frequency detector (PFD) is used to expand the pull-in range to meet the wide tuning range of a VCO required by process-voltage-temperature (PVT) variation. SMIC 0. 18-μm CMOS technology is adopted and the core area is 170 μm ×270 μm. Measurements show that, under a 1.8 V supply voltage, it consumes only about 90 mW, and has an input sensitivity of less than 25 mV, an output single-ended swing of above 300 mV, a phase noise of - 114 dBc/Hz at 1 MHz offset and a pull-in range of 1 GHz.
文摘A 2GHz differentially tuned CMOS monolithic LC-VCO is designed and fabricated in a 0.18μm CMOS process. The VCO has a 16.15% tuning range (from 1. 8998 to 2. 2335GHz) through a combination of analog and digital tuning techniques (4-bit binary switch-capacitor array). The measured phase noise is - 118.17dBc/Hz at a 1MHz offset from a 2. 158GHz carrier. With the presented improved switch,the phase noise varies no more than 3dB at different digital control bits. The phase noise changes only by about 2dB in the tuning range because of the pn-junctions as the varactors. The VCO draws a current of about 2. lmA from a 1.8V power supply and works normally with a 1.5V power supply.
文摘A low phase noise quadrature oscillator using the new injection locked technique is proposed. The incident signal is directly injected into the common-source connection of the sub-harmonic oscillator. In principle, the phase noise performance of the quadrature output is better than the sub-harmonic oscillator itself. The quadrature oscillator is implemented in a 0. 25μm CMOS process. Measurements show the proposed oscillator could achieve a phase noise of --130dBc/Hz at 1MHz offset from 1. 13GHz carrier while only drawing an 8.0mA current from the 2.5V power supply.
文摘This paper introduces a 2.5GHz low phase-noise cross-coupled LC-VCO realized in 0.35μm SiGe BiCMOS technology. The conventional definition of a VCO operating regime is revised from a new perspective. Analysis shows the importance of inductance and bias current selection for oscillator phase noise optimization. Differences between CMOS and BJT VCO design strategy are then analyzed and the conclusions are summarized. In this implementation, bonding wires form the resonator to improve the phase noise performance. The VCO is then integrated with other components to form a PLL frequency synthesizer with a loop bandwidth of 30kHz. Measurement shows a phase noise of - 95dBc/Hz at 100kHz offset and - 116dBc/Hz at 1MHz offset from a 2.5GHz carrier. At a supply voltage of 3V, the VCO core consumes 8mA. To our knowledge,this is the first differential cross-coupled VCO in SiGe BiCMOS technology in China.